Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
STPSC20065D DIODE SIL CARB 650V 20A TO220AC STMicroelectronics	975	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 650 V	1250pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
IDH16G65C5XKSA2 DIODE SIL CARB 650V 16A TO220-1 Infineon Technologies	1,984	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	470pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
VS-1N3890R DIODE GEN PURP 100V 12A DO203AA Vishay General Semiconductor - Diodes Division	181	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	100 V	12A	1.4 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	25 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 150°C
1N5553 DIODE GEN PURP 800V 3A AXIAL Microchip Technology	251	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	800 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 800 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
FFSD10120A DIODE SIL CARBIDE 1.2KV TO252AA onsemi	1,706	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	-	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	612pF @ 1V, 100kHz	-	-	Surface Mount	TO-252AA	-
1N5551US DIODE GEN PURP 400V 3A D-5B Microchip Technology	165	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	400 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 400 V	-	-	-	Surface Mount	D-5B	-65°C ~ 175°C
IDH12SG60CXKSA2 DIODE SIL CARB 600V 12A TO220-1 Infineon Technologies	396	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	12A	2.1 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 600 V	310pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
VS-3C20ET07T-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	788	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	845pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
STPSC20065DI DIODE SIC 650V 20A TO220AC INS STMicroelectronics	599	RFQ	Datasheet	ECOPACK®2	TO-220-2 Insulated, TO-220AC	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 650 V	1250pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC ins	-40°C ~ 175°C
MSC030SDA070B DIODE SIL CARBIDE 700V 60A TO247 Microchip Technology	118	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	700 V	60A	1.8 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 700 V	1200pF @ 1V, 1MHz	-	-	Through Hole	TO-247	-55°C ~ 175°C
DSP45-18A DIODE GEN PURP 1.8KV 45A TO247 IXYS	5,823	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1800 V	45A	1.26 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 1800 V	18pF @ 400V, 1MHz	-	-	Through Hole	TO-247 (IXTH)	-40°C ~ 175°C
FFSP3065B DIODE SIL CARB 650V 30A TO220-2 onsemi	1,216	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1280pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
VS-40EPF02-M3 DIODE GP 200V 40A TO247AC Vishay General Semiconductor - Diodes Division	466	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	200 V	40A	1.25 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 200 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
IDH16G120C5XKSA1 DIODE SIL CARB 1.2KV 16A TO220-1 Infineon Technologies	243	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	16A	1.95 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	730pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
C3D16065A DIODE SIL CARB 650V 39A TO220-2 Wolfspeed, Inc.	1,048	RFQ	Datasheet	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	39A	1.8 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	95 µA @ 650 V	878pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
VS-80APS08-M3 DIODE GEN PURP 800V 80A TO247AC Vishay General Semiconductor - Diodes Division	1,237	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	800 V	80A	1.17 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 800 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
DSEI60-10A DIODE GEN PURP 1KV 60A TO247AD IXYS	287	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1000 V	60A	2.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	3 mA @ 1000 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
S4D20120H DIODE SIL CARB 1.2KV 20A TO247AC SMC Diode Solutions	300	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 1200 V	721pF @ 0V, 1MHz	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
IDK16G120C5XTMA1 DIODE SIL CARB 1.2KV 40A TO263-1 Infineon Technologies	437	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	40A	1.95 V @ 16 A	No Recovery Time > 500mA (Io)	-	80 µA @ 1200 V	730pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2-1	-55°C ~ 175°C
SCS215AJTLL DIODE SIL CARB 650V 15A TO263AB Rohm Semiconductor	3,996	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	550pF @ 1V, 1MHz	-	-	Surface Mount	TO-263AB	175°C (Max)

FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.