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Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
UPS840/TR13 Microchip Technology

UPS840/TR13

DIODE SCHOTTKY 40V 8A POWERMITE3

Microchip Technology

1,835
Datasheet - Powermite®3 Tape & Reel (TR) Active Schottky 40 V 8A 450 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 40 V - - - Surface Mount Powermite 3 -55°C ~ 125°C
S4D04120A SMC Diode Solutions

S4D04120A

DIODE SIL CARB 1.2KV 4A TO220AC

SMC Diode Solutions

547
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 4A 1.8 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 302pF @ 0V, 1MHz - - Through Hole TO-220AC (TO-220-2) -55°C ~ 175°C
FFSD0665B-F085 onsemi

FFSD0665B-F085

DIODE SIL CARB 650V 9.1A DPAK

onsemi

1,948
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 9.1A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 259pF @ 1V, 100kHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
VS-8EWS08STRL-M3 Vishay General Semiconductor - Diodes Division

VS-8EWS08STRL-M3

DIODE GEN PURP 800V 8A D-PAK

Vishay General Semiconductor - Diodes Division

5,527
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 800 V 8A 1.1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 800 V - - - Surface Mount TO-252AA (DPAK) -55°C ~ 150°C
UCQ30A03-TE24L2 KYOCERA AVX

UCQ30A03-TE24L2

DIODE SCHOTTKY 30V 30A TO263LP

KYOCERA AVX

10,325
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 30 V 30A 500 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 1.5 mA @ 30 V - - - Surface Mount TO-263LP -40°C ~ 150°C
VS-E5PW3006LHN3 Vishay General Semiconductor - Diodes Division

VS-E5PW3006LHN3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

1,850
Datasheet FRED Pt® Gen 5 TO-247-2 Tube Active Standard 600 V 30A 2.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 39 ns 20 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
VS-E4PH6006L-N3 Vishay General Semiconductor - Diodes Division

VS-E4PH6006L-N3

DIODE GP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

395
Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 60A 2 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 68 ns 50 µA @ 600 V - - - Through Hole TO-247AC Modified -55°C ~ 175°C
IDK02G120C5XTMA1 Infineon Technologies

IDK02G120C5XTMA1

DIODE SIC 1.2KV 11.8A TO263-1

Infineon Technologies

688
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 11.8A 1.65 V @ 2 A No Recovery Time > 500mA (Io) - 18 µA @ 1200 V 182pF @ 1V, 1MHz - - Surface Mount PG-TO263-2-1 -55°C ~ 175°C
VS-8EWS08STR-M3 Vishay General Semiconductor - Diodes Division

VS-8EWS08STR-M3

DIODE GEN PURP 800V 8A D-PAK

Vishay General Semiconductor - Diodes Division

1,532
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 800 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 800 V - - - Surface Mount TO-252AA (DPAK) -55°C ~ 150°C
STBR3008G2Y-TR STMicroelectronics

STBR3008G2Y-TR

DIODE GEN PURP 800V 30A D2PAK HV

STMicroelectronics

422
Datasheet ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 800 V 30A 1.1 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 800 V - Automotive AEC-Q101 Surface Mount D2PAK HV -40°C ~ 175°C
IDW40E65D1FKSA1 Infineon Technologies

IDW40E65D1FKSA1

DIODE GP 650V 80A TO247-3-1

Infineon Technologies

110
Datasheet - TO-247-3 Tube Active Standard 650 V 80A 1.7 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 129 ns 40 µA @ 650 V - - - Through Hole PG-TO247-3-1 -40°C ~ 175°C
VS-EPU6006L-N3 Vishay General Semiconductor - Diodes Division

VS-EPU6006L-N3

DIODE GEN PURP 600V 60A TO247AD

Vishay General Semiconductor - Diodes Division

217
Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 60A 1.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 110 ns 30 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
STBR3012W STMicroelectronics

STBR3012W

DIODE GEN PURP 1.2KV 30A DO247

STMicroelectronics

1,666
Datasheet - DO-247-2 (Straight Leads) Tube Active Standard 1200 V 30A 1.3 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 1200 V - - - Through Hole DO-247 175°C (Max)
SDUR6030W SMC Diode Solutions

SDUR6030W

DIODE GEN PURP 300V 60A TO247AC

SMC Diode Solutions

4,362
Datasheet - TO-247-2 Tube Active Standard 300 V 60A 1.4 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 10 µA @ 300 V - - - Through Hole TO-247AC -55°C ~ 150°C
JANTX1N3595-1 Microchip Technology

JANTX1N3595-1

DIODE GEN PURP 125V 150MA DO35

Microchip Technology

174
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - Military MIL-S-19500-241 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
IDH06G65C5XKSA2 Infineon Technologies

IDH06G65C5XKSA2

DIODE SIL CARB 650V 6A TO220-2-1

Infineon Technologies

1,287
Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 650 V 190pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
1N4245 Microchip Technology

1N4245

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

264
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 200 V - - - Through Hole A, Axial -65°C ~ 175°C
VS-E5TX3006S2LHM3 Vishay General Semiconductor - Diodes Division

VS-E5TX3006S2LHM3

30A, 600V, "X" SERIES GEN 5 FRED

Vishay General Semiconductor - Diodes Division

1,566
Datasheet FRED Pt® G5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 30A 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 41 ns 20 µA @ 600 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
VS-45EPS12L-M3 Vishay General Semiconductor - Diodes Division

VS-45EPS12L-M3

DIODE GEN PURP 1.2KV 45A TO247AD

Vishay General Semiconductor - Diodes Division

187
Datasheet - TO-247-2 Tube Active Standard 1200 V 45A 1.14 V @ 45 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Through Hole TO-247AD -40°C ~ 150°C
VS-APU6006-N3 Vishay General Semiconductor - Diodes Division

VS-APU6006-N3

DIODE GEN PURP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

486
Datasheet FRED Pt® TO-247-3 Tube Active Standard 600 V 30A 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 30 µA @ 600 V - - - Through Hole TO-247AC -40°C ~ 150°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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