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ELECTRONIC COMPONENTS

FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK12A55D(STA4,Q,M) Toshiba Semiconductor and Storage

TK12A55D(STA4,Q,M)

MOSFET N-CH 550V 12A TO220SIS

Toshiba Semiconductor and Storage

8,584
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 12A (Ta) 10V 570mOhm @ 6A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 1550 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK2R9E10PL,S1X Toshiba Semiconductor and Storage

TK2R9E10PL,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

3,460
Datasheet U-MOSIX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Ta) 4.5V, 10V 2.9mOhm @ 50A, 10V 2.5V @ 1mA 161 nC @ 10 V ±20V 9500 pF @ 50 V - 306W (Tc) 175°C - - Through Hole TO-220
NTMFS5C406NT1G onsemi

NTMFS5C406NT1G

T6 40V SG NCH SO8FL HEFET

onsemi

5,550
Datasheet - - Tape & Reel (TR) Active - - - 353A (Tc) - - - - - - - - - - - - -
RS6E120BGTB1 Rohm Semiconductor

RS6E120BGTB1

30V 270A HSOP8, POWER MOSFET : R

Rohm Semiconductor

7,370
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 4.5V, 10V 1.1mOhm @ 90A, 10V 2.5V @ 1mA 75 nC @ 10 V ±20V 5750 pF @ 15 V - 3W (Ta), 138W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
PSMP033N10NS2_T0_00601 Panjit International Inc.

PSMP033N10NS2_T0_00601

Excellent FOM

Panjit International Inc.

2,199
Datasheet - - Tube Active - - - - - - - - - - - - - - - - -
NTMJS1D3N04CTWG onsemi

NTMJS1D3N04CTWG

MOSFET N-CH 40V 41A/235A 8LFPAK

onsemi

2,886
Datasheet - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 41A (Ta), 235A (Tc) 10V 1.3mOhm @ 50A, 10V 3.5V @ 170µA 65 nC @ 10 V ±20V 4300 pF @ 25 V - 3.8W (Ta), 128W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-LFPAK
SIDR5102EP-T1-RE3 Vishay Siliconix

SIDR5102EP-T1-RE3

N-CHANNEL 100 V (D-S) 175C MOSFE

Vishay Siliconix

5,833
Datasheet TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 28.2A (Ta), 126A (Tc) 7.5V, 10V 4.1mOhm @ 20A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 2850 pF @ 50 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8DC
MCTL2D1N10YH-TP Micro Commercial Co

MCTL2D1N10YH-TP

N-CHANNEL MOSFET,TOLL-8L

Micro Commercial Co

2,510
Datasheet - 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 265A (Tc) 10V 2.1mOhm @ 50A, 10V 3.8V @ 250µA 133 nC @ 10 V ±20V 9600 pF @ 50 V - 375W (Tj) -55°C ~ 175°C (TJ) - - Surface Mount TOLL-8L
TK13A55DA(STA4,QM) Toshiba Semiconductor and Storage

TK13A55DA(STA4,QM)

MOSFET N-CH 550V 12.5A TO220SIS

Toshiba Semiconductor and Storage

9,049
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 12.5A (Ta) 10V 480mOhm @ 6.3A, 10V 4V @ 1mA 38 nC @ 10 V ±30V 1800 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
SIHD240N65E-GE3 Vishay Siliconix

SIHD240N65E-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

3,717
Datasheet E TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 240mOhm @ 7A, 10V 5V @ 250µA 29 nC @ 10 V ±30V 960 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
STO24N60M6 STMicroelectronics

STO24N60M6

DISCRETE

STMicroelectronics

5,440
Datasheet - 8-PowerSFN Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 190mOhm @ 8.5A, 10V 4.75V @ 250µA 23 nC @ 10 V ±25V 960 pF @ 100 V - 142W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TOLL (HV)
NVMFS5C628NT1G onsemi

NVMFS5C628NT1G

MOSFET N-CH 60V 28A/150A 5DFN

onsemi

6,049
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 28A (Ta), 150A (Tc) 10V 3mOhm @ 27A, 10V 4V @ 135µA 34 nC @ 10 V ±20V 2630 pF @ 30 V - 3.7W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
TK10J80E,S1E Toshiba Semiconductor and Storage

TK10J80E,S1E

MOSFET N-CH 800V 10A TO3P

Toshiba Semiconductor and Storage

18
Datasheet π-MOSVIII TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Ta) 10V 1Ohm @ 5A, 10V 4V @ 1mA 46 nC @ 10 V ±30V 2000 pF @ 25 V - 250W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
SUD50P06-15L-T4-E3 Vishay Siliconix

SUD50P06-15L-T4-E3

MOSFET P-CH 60V 50A TO252

Vishay Siliconix

3,923
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 15mOhm @ 17A, 10V 3V @ 250µA 165 nC @ 10 V ±20V 4950 pF @ 25 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
RD3P07BBHTL1 Rohm Semiconductor

RD3P07BBHTL1

NCH 100V 70A, TO-252, POWER MOSF

Rohm Semiconductor

7,469
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 6V, 10V 7.7mOhm @ 70A, 10V 4V @ 1mA 38 nC @ 10 V ±20V 2410 pF @ 50 V - 89W (Tc) 150°C (TJ) - - Surface Mount TO-252
TK14A55D(STA4,Q,M) Toshiba Semiconductor and Storage

TK14A55D(STA4,Q,M)

MOSFET N-CH 550V 14A TO220SIS

Toshiba Semiconductor and Storage

22
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 14A (Ta) 10V 370mOhm @ 7A, 10V 4V @ 1mA 40 nC @ 10 V ±30V 2300 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
SUM60030E-GE3 Vishay Siliconix

SUM60030E-GE3

MOSFET N-CH 80V 120A TO263

Vishay Siliconix

7,576
Datasheet TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 7.5V, 10V 3.2mOhm @ 30A, 10V 4V @ 250µA 141 nC @ 10 V ±20V 7910 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
TK17E65W,S1X Toshiba Semiconductor and Storage

TK17E65W,S1X

MOSFET N-CH 650V 17.3A TO220

Toshiba Semiconductor and Storage

23
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 200mOhm @ 8.7A, 10V 3.5V @ 900µA 45 nC @ 10 V ±30V 1800 pF @ 300 V - 165W (Tc) 150°C (TJ) - - Through Hole TO-220
IRF150DM115XTMA1 Infineon Technologies

IRF150DM115XTMA1

TRENCH >=100V DIRECTFET

Infineon Technologies

5,474
Datasheet - - Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V - - - - - - - - - - - - - -
SIHP240N65E-GE3 Vishay Siliconix

SIHP240N65E-GE3

E SERIES POWER MOSFET 650 V (D-

Vishay Siliconix

2,642
Datasheet E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 240mOhm @ 7A, 10V 5V @ 250µA 29 nC @ 10 V ±30V 960 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

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Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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