FETs, MOSFETs
Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TK12A55D(STA4,Q,M)MOSFET N-CH 550V 12A TO220SIS |
8,584 |
|
Datasheet | π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 12A (Ta) | 10V | 570mOhm @ 6A, 10V | 4V @ 1mA | 28 nC @ 10 V | ±30V | 1550 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
|
TK2R9E10PL,S1XPB-F POWER MOSFET TRANSISTOR TO- |
3,460 |
|
Datasheet | U-MOSIX-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Ta) | 4.5V, 10V | 2.9mOhm @ 50A, 10V | 2.5V @ 1mA | 161 nC @ 10 V | ±20V | 9500 pF @ 50 V | - | 306W (Tc) | 175°C | - | - | Through Hole | TO-220 |
|
NTMFS5C406NT1GT6 40V SG NCH SO8FL HEFET |
5,550 |
|
Datasheet | - | - | Tape & Reel (TR) | Active | - | - | - | 353A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RS6E120BGTB130V 270A HSOP8, POWER MOSFET : R |
7,370 |
|
Datasheet | - | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 120A (Tc) | 4.5V, 10V | 1.1mOhm @ 90A, 10V | 2.5V @ 1mA | 75 nC @ 10 V | ±20V | 5750 pF @ 15 V | - | 3W (Ta), 138W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-HSOP |
|
PSMP033N10NS2_T0_00601Excellent FOM |
2,199 |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NTMJS1D3N04CTWGMOSFET N-CH 40V 41A/235A 8LFPAK |
2,886 |
|
Datasheet | - | SOT-1205, 8-LFPAK56 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 41A (Ta), 235A (Tc) | 10V | 1.3mOhm @ 50A, 10V | 3.5V @ 170µA | 65 nC @ 10 V | ±20V | 4300 pF @ 25 V | - | 3.8W (Ta), 128W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-LFPAK |
|
SIDR5102EP-T1-RE3N-CHANNEL 100 V (D-S) 175C MOSFE |
5,833 |
|
Datasheet | TrenchFET® Gen V | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 28.2A (Ta), 126A (Tc) | 7.5V, 10V | 4.1mOhm @ 20A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±20V | 2850 pF @ 50 V | - | 7.5W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8DC |
|
MCTL2D1N10YH-TPN-CHANNEL MOSFET,TOLL-8L |
2,510 |
|
Datasheet | - | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 265A (Tc) | 10V | 2.1mOhm @ 50A, 10V | 3.8V @ 250µA | 133 nC @ 10 V | ±20V | 9600 pF @ 50 V | - | 375W (Tj) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL-8L |
|
TK13A55DA(STA4,QM)MOSFET N-CH 550V 12.5A TO220SIS |
9,049 |
|
Datasheet | π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 12.5A (Ta) | 10V | 480mOhm @ 6.3A, 10V | 4V @ 1mA | 38 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
|
SIHD240N65E-GE3E SERIES POWER MOSFET 650 V (D- |
3,717 |
|
Datasheet | E | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 16A (Tc) | 10V | 240mOhm @ 7A, 10V | 5V @ 250µA | 29 nC @ 10 V | ±30V | 960 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
STO24N60M6DISCRETE |
5,440 |
|
Datasheet | - | 8-PowerSFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 190mOhm @ 8.5A, 10V | 4.75V @ 250µA | 23 nC @ 10 V | ±25V | 960 pF @ 100 V | - | 142W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TOLL (HV) |
|
NVMFS5C628NT1GMOSFET N-CH 60V 28A/150A 5DFN |
6,049 |
|
Datasheet | - | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 28A (Ta), 150A (Tc) | 10V | 3mOhm @ 27A, 10V | 4V @ 135µA | 34 nC @ 10 V | ±20V | 2630 pF @ 30 V | - | 3.7W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) |
|
TK10J80E,S1EMOSFET N-CH 800V 10A TO3P |
18 |
|
Datasheet | π-MOSVIII | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 10A (Ta) | 10V | 1Ohm @ 5A, 10V | 4V @ 1mA | 46 nC @ 10 V | ±30V | 2000 pF @ 25 V | - | 250W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |
|
SUD50P06-15L-T4-E3MOSFET P-CH 60V 50A TO252 |
3,923 |
|
Datasheet | TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 15mOhm @ 17A, 10V | 3V @ 250µA | 165 nC @ 10 V | ±20V | 4950 pF @ 25 V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
|
RD3P07BBHTL1NCH 100V 70A, TO-252, POWER MOSF |
7,469 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 6V, 10V | 7.7mOhm @ 70A, 10V | 4V @ 1mA | 38 nC @ 10 V | ±20V | 2410 pF @ 50 V | - | 89W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
TK14A55D(STA4,Q,M)MOSFET N-CH 550V 14A TO220SIS |
22 |
|
Datasheet | π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 14A (Ta) | 10V | 370mOhm @ 7A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
|
SUM60030E-GE3MOSFET N-CH 80V 120A TO263 |
7,576 |
|
Datasheet | TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 7.5V, 10V | 3.2mOhm @ 30A, 10V | 4V @ 250µA | 141 nC @ 10 V | ±20V | 7910 pF @ 40 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
TK17E65W,S1XMOSFET N-CH 650V 17.3A TO220 |
23 |
|
Datasheet | DTMOSIV | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.3A (Ta) | 10V | 200mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 165W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
|
IRF150DM115XTMA1TRENCH >=100V DIRECTFET |
5,474 |
|
Datasheet | - | - | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SIHP240N65E-GE3E SERIES POWER MOSFET 650 V (D- |
2,642 |
|
Datasheet | E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 16A (Tc) | 10V | 240mOhm @ 7A, 10V | 5V @ 250µA | 29 nC @ 10 V | ±30V | 960 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.