FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TK20N60W,S1VF MOSFET N-CH 600V 20A TO247 Toshiba Semiconductor and Storage	36	RFQ	Datasheet	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Ta)	10V	155mOhm @ 10A, 10V	3.7V @ 1mA	48 nC @ 10 V	±30V	1680 pF @ 300 V	-	165W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
AIMCQ120R160M1TXTMA1 SIC_DISCRETE Infineon Technologies	100	RFQ	Datasheet	CoolSiC™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	18.6A (Tc)	18V, 20V	200mOhm @ 5A, 20V	5.1V @ 1.5mA	14 nC @ 20 V	+25V, -10V	350 pF @ 800 V	-	125W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22
SCT055TO65G3 SILICON CARBIDE POWER MOSFET 650 STMicroelectronics	88	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIMCQ120R120M1TXTMA1 SIC_DISCRETE Infineon Technologies	100	RFQ	Datasheet	CoolSiC™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	24A (Tc)	18V, 20V	150mOhm @ 7A, 20V	5.1V @ 2.2mA	18 nC @ 20 V	+25V, -10V	458 pF @ 800 V	-	161W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22
IMZC120R078M2HXKSA1 IMZC120R078M2HXKSA1 Infineon Technologies	90	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	28A (Tc)	15V, 18V	78mOhm @ 9A, 18V	5.1V @ 2.8mA	21 nC @ 18 V	+23V, -7V	700 pF @ 800 V	-	143W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-17
TK31E60W,S1VX MOSFET N-CH 600V 30.8A TO220 Toshiba Semiconductor and Storage	42	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	3.7V @ 1.5mA	86 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
PSMN1R1-100CSEJ PSMN1R1-100CSE/SOT8005A/CCPAK1 Nexperia USA Inc.	46	RFQ	Datasheet	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	430A (Tc)	10V	1.09mOhm @ 25A, 10V	3.6V @ 1mA	509 nC @ 10 V	±20V	36460 pF @ 50 V	-	1.55kW (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212i
IPQC60T040S7AXTMA1 AUTOMOTIVE_COOLMOS Infineon Technologies	75	RFQ	Datasheet	CoolMOS™	22-PowerBSOP Module	Box	Active	N-Channel	MOSFET (Metal Oxide)	600 V	54A (Tc)	12V	40mOhm @ 13A, 12V	4.5V @ 780µA	83 nC @ 12 V	±20V	3128 pF @ 300 V	-	272W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22
TK35N65W5,S1F MOSFET N-CH 650V 35A TO247 Toshiba Semiconductor and Storage	30	RFQ	Datasheet	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	35A (Ta)	10V	95mOhm @ 17.5A, 10V	4.5V @ 2.1mA	115 nC @ 10 V	±30V	4100 pF @ 300 V	-	270W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
TW107Z65C,S1F G3 650V SIC-MOSFET TO-247-4L 10 Toshiba Semiconductor and Storage	90	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	20A (Tc)	18V	152mOhm @ 10A, 18V	5V @ 1.2mA	21 nC @ 18 V	+25V, -10V	600 pF @ 400 V	-	76W (Tc)	175°C	-	-	Through Hole	TO-247-4L(X)
TK31J60W5,S1VQ MOSFET N-CH 600V 30.8A TO3P Toshiba Semiconductor and Storage	30	RFQ	Datasheet	DTMOSIV	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	3.7V @ 1.5mA	105 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-3P(N)
STW65N045M9-4 N-CHANNEL 650 V, 39 MOHM TYP., 5 STMicroelectronics	90	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	54A (Tc)	10V	45mOhm @ 28A, 10V	4.2V @ 250µA	80 nC @ 10 V	±30V	4610 pF @ 400 V	-	312W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4
SCT040TO65G3 SILICON CARBIDE POWER MOSFET 650 STMicroelectronics	100	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK62N60W5,S1VF PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	30	RFQ	Datasheet	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	61.8A (Ta)	10V	45mOhm @ 30.9A, 10V	4.5V @ 3.1mA	205 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C	-	-	Through Hole	TO-247
TW140Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 14 Toshiba Semiconductor and Storage	65	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	20A (Tc)	18V	191mOhm @ 10A, 18V	5V @ 1mA	24 nC @ 18 V	+25V, -10V	691 pF @ 800 V	-	107W (Tc)	175°C	-	-	Through Hole	TO-247-4L(X)
AIMZH120R080M1TXKSA1 SIC_DISCRETE Infineon Technologies	17	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	31A (Tc)	18V, 20V	100mOhm @ 10A, 20V	5.1V @ 3.3mA	24 nC @ 20 V	+23V, -5V	671 pF @ 800 V	-	169W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-4-11
IPDQ60T022S7XTMA1 HIGH POWER_NEW Infineon Technologies	100	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP60R016CM8XKSA1 IPP60R016CM8XKSA1 Infineon Technologies	23	RFQ	Datasheet	CoolMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	135A (Tc)	10V	16mOhm @ 62.5A, 10V	4.7V @ 1.48mA	171 nC @ 10 V	±20V	7545 pF @ 400 V	-	625W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-1
APT10M19BVRG MOSFET N-CH 100V 75A TO247 Microchip Technology	53	RFQ	Datasheet	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	75A (Tc)	-	19mOhm @ 500mA, 10V	4V @ 1mA	300 nC @ 10 V	-	6120 pF @ 25 V	-	-	-	-	-	Through Hole	TO-247 [B]
IPQC60T022S7AXTMA1 AUTOMOTIVE_COOLMOS Infineon Technologies	100	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.