FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
FK4B01120LE SINGLE NCH MOSFET, 12V, 3.9A 17M Nuvoton Technology Corporation	1,000	RFQ	Datasheet	-	4-XFLGA, CSP	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12 V	3.9A (Ta)	1.5V, 4.5V	24mOhm @ 1.5A, 4.5V	1V @ 394µA	7 nC @ 4.5 V	±8V	490 pF @ 10 V	-	370mW (Ta)	-40°C ~ 85°C (TA)	Automotive	AEC-Q101	Surface Mount	4-CSP (1x1)
TK8A65W,S5X MOSFET N-CH 650V 7.8A TO220SIS Toshiba Semiconductor and Storage	40	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7.8A (Ta)	10V	650mOhm @ 3.9A, 10V	3.5V @ 300µA	16 nC @ 10 V	±30V	570 pF @ 300 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK560A60Y,S4X MOSFET N-CH 600V 7A TO220SIS Toshiba Semiconductor and Storage	50	RFQ	Datasheet	DTMOSV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	560mOhm @ 3.5A, 10V	4V @ 240µA	14.5 nC @ 10 V	±30V	380 pF @ 300 V	-	30W	150°C (TJ)	-	-	Through Hole	TO-220SIS
DMT4003SCT MOSFET N-CH 40V 205A TO220AB Diodes Incorporated	46	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	205A (Tc)	10V	3mOhm @ 90A, 10V	4V @ 250µA	75.6 nC @ 10 V	±20V	6865 pF @ 20 V	-	156W	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
TK5A60D(STA4,Q,M) MOSFET N-CH 600V 5A TO220SIS Toshiba Semiconductor and Storage	41	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	5A (Ta)	10V	1.43Ohm @ 2.5A, 10V	4.4V @ 1mA	16 nC @ 10 V	±30V	700 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK8A45D(STA4,Q,M) MOSFET N-CH 450V 8A TO220SIS Toshiba Semiconductor and Storage	50	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	450 V	8A (Ta)	10V	900mOhm @ 4A, 10V	4.4V @ 1mA	16 nC @ 10 V	±30V	700 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK7A55D(STA4,Q,M) MOSFET N-CH 550V 7A TO220SIS Toshiba Semiconductor and Storage	45	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	550 V	7A (Ta)	10V	1.25Ohm @ 3.5A, 10V	4.4V @ 1mA	16 nC @ 10 V	±30V	700 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK3A65D(STA4,Q,M) MOSFET N-CH 650V 3A TO220SIS Toshiba Semiconductor and Storage	26	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	3A (Ta)	10V	2.25Ohm @ 1.5A, 10V	4.4V @ 1mA	11 nC @ 10 V	±30V	540 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK5A65DA(STA4,Q,M) MOSFET N-CH 650V 4.5A TO220SIS Toshiba Semiconductor and Storage	32	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	4.5A (Ta)	10V	1.67Ohm @ 2.3A, 10V	4.4V @ 1mA	16 nC @ 10 V	±30V	700 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK5A65D(STA4,Q,M) MOSFET N-CH 650V 5A TO220SIS Toshiba Semiconductor and Storage	28	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	5A (Ta)	10V	1.43Ohm @ 2.5A, 10V	4V @ 1mA	16 nC @ 10 V	±30V	800 pF @ 25 V	-	40W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
STF80N600K6 N-CHANNEL 800 V, 515 MOHM TYP., STMicroelectronics	26	RFQ	Datasheet	ECOPACK®	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	7A (Tc)	10V	600mOhm @ 3A, 10V	4V @ 100µA	10.7 nC @ 10 V	±30V	540 pF @ 400 V	-	23W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FP
DMTH4005SCT MOSFET N-CH 40V 100A TO220AB Diodes Incorporated	50	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	100A (Tc)	10V	4.7mOhm @ 50A, 10V	4V @ 250µA	49.1 nC @ 10 V	±20V	3062 pF @ 20 V	-	2.8W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-220-3
TK11A50D(STA4,Q,M) MOSFET N-CH 500V 11A TO220SIS Toshiba Semiconductor and Storage	50	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	11A (Ta)	10V	600mOhm @ 5.5A, 10V	4V @ 1mA	24 nC @ 10 V	±30V	1200 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK56E12N1,S1X MOSFET N CH 120V 56A TO-220 Toshiba Semiconductor and Storage	52	RFQ	Datasheet	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120 V	56A (Ta)	10V	7mOhm @ 28A, 10V	4V @ 1mA	69 nC @ 10 V	±20V	4200 pF @ 60 V	-	168W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK8Q65W,S1Q MOSFET N-CH 650V 7.8A IPAK Toshiba Semiconductor and Storage	75	RFQ	Datasheet	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7.8A (Ta)	10V	670mOhm @ 3.9A, 10V	3.5V @ 300µA	16 nC @ 10 V	±30V	570 pF @ 300 V	-	80W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
TK8A55DA(STA4,Q,M) MOSFET N-CH 550V 7.5A TO220SIS Toshiba Semiconductor and Storage	48	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	550 V	7.5A (Ta)	10V	1.07Ohm @ 3.8A, 10V	4V @ 1mA	16 nC @ 10 V	±30V	800 pF @ 25 V	-	40W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK18A30D,S5X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	48	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	18A (Ta)	10V	139mOhm @ 9A, 10V	3.5V @ 1mA	60 nC @ 10 V	±20V	2600 pF @ 100 V	-	45W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK11A45D(STA4,Q,M) MOSFET N-CH 450V 11A TO220SIS Toshiba Semiconductor and Storage	43	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	450 V	11A (Ta)	10V	620mOhm @ 5.5A, 10V	4V @ 1mA	20 nC @ 10 V	±30V	1050 pF @ 25 V	-	40W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK5Q60W,S1VQ MOSFET N CH 600V 5.4A IPAK Toshiba Semiconductor and Storage	75	RFQ	Datasheet	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	5.4A (Ta)	10V	900mOhm @ 2.7A, 10V	3.7V @ 270µA	10.5 nC @ 10 V	±30V	380 pF @ 300 V	-	60W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
TK7A60W,S4VX MOSFET N-CH 600V 7A TO220SIS Toshiba Semiconductor and Storage	40	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Ta)	10V	600mOhm @ 3.5A, 10V	3.7V @ 350µA	15 nC @ 10 V	±30V	490 pF @ 300 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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