FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IPDQ60T022S7AXTMA1 AUTOMOTIVE_COOLMOS Infineon Technologies	100	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT040W65G3-4AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	75	RFQ	Datasheet	*	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TW083Z65C,S1F G3 650V SIC-MOSFET TO-247-4L 83 Toshiba Semiconductor and Storage	88	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	30A (Tc)	18V	118mOhm @ 15A, 18V	5V @ 600µA	28 nC @ 18 V	+25V, -10V	873 pF @ 400 V	-	111W (Tc)	175°C	-	-	Through Hole	TO-247-4L(X)
APT5015BVFRG MOSFET N-CH 500V 32A TO247 Microchip Technology	40	RFQ	Datasheet	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	32A (Tc)	-	150mOhm @ 500mA, 10V	4V @ 1mA	300 nC @ 10 V	-	5280 pF @ 25 V	-	-	-	-	-	Through Hole	TO-247 [B]
DMWSH120H90SM4Q SIC MOSFET BVDSS: >1000V TO247-4 Diodes Incorporated	17	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	15V	97.5mOhm @ 20A, 15V	3.5V @ 5mA	47.6 nC @ 15 V	+19V, -8V	1112 pF @ 1000 V	-	235W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
AIMCQ120R040M1TXTMA1 SIC_DISCRETE Infineon Technologies	90	RFQ	Datasheet	CoolSiC™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	61A (Tc)	18V, 20V	50mOhm @ 20A, 20V	5.1V @ 6.4mA	43 nC @ 20 V	+25V, -10V	1264 pF @ 800 V	-	341W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22
IPQC60T017S7XTMA1 HIGH POWER_NEW Infineon Technologies	100	RFQ	Datasheet	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	113A (Tc)	12V	17mOhm @ 29A, 12V	4.5V @ 1.88mA	196 nC @ 12 V	±20V	7370 pF @ 300 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22
IPDQ60T017S7XTMA1 HIGH POWER_NEW Infineon Technologies	68	RFQ	Datasheet	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	113A (Tc)	12V	17mOhm @ 29A, 12V	4.5V @ 1.88mA	196 nC @ 12 V	±20V	7370 pF @ 300 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22-1
IPDQ60T017S7AXTMA1 AUTOMOTIVE_COOLMOS Infineon Technologies	100	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPQC60T017S7AXTMA1 AUTOMOTIVE_COOLMOS Infineon Technologies	100	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TM3E0039120A SIC MOSFET Coherent Corp	90	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tray	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	60A	-	-	-	-	-	-	-	-	-	Automotive	AEC-Q101	Surface Mount	TO-263-7
SCT027H65G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	100	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIMCQ120R030M1TXTMA1 SIC_DISCRETE Infineon Technologies	63	RFQ	Datasheet	CoolSiC™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	78A (Tc)	18V, 20V	38mOhm @ 27A, 20V	5.1V @ 8.6mA	57 nC @ 20 V	+25V, -10V	1738 pF @ 800 V	-	417W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22
TM3B0039120A SIC MOSFET Coherent Corp	90	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	60A	-	-	-	-	-	-	-	-	-	Automotive	AEC-Q101	Through Hole	TO-247-4
MSC040SMA120B4N MOSFET SIC 1200 V 40 MOHM TO-247 Microchip Technology	60	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	71A (Tc)	18V, 20V	50mOhm @ 40A, 20V	5V @ 2mA	137 nC @ 20 V	+23V, -10V	1962 pF @ 1000 V	-	372W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
TW027Z65C,S1F G3 650V SIC-MOSFET TO-247-4L 27 Toshiba Semiconductor and Storage	80	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	58A (Tc)	18V	38mOhm @ 29A, 18V	5V @ 3mA	65 nC @ 18 V	+25V, -10V	2288 pF @ 400 V	-	156W (Tc)	175°C	-	-	Through Hole	TO-247-4L(X)
TW060Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 6 Toshiba Semiconductor and Storage	88	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	18V	82mOhm @ 18A, 18V	5V @ 4.2mA	46 nC @ 18 V	+25V, -10V	1530 pF @ 800 V	-	170W (Tc)	175°C	-	-	Through Hole	TO-247-4L(X)
SCT040W120G3AG HIP-247 IN LINE HEAT SINK 2MM STMicroelectronics	100	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	15V, 18V	54mOhm @ 16A, 18V	4.2V @ 5mA	56 nC @ 18 V	+22V, -10V	1329 pF @ 800 V	-	312W (Tc)	-55°C ~ 200°C (TJ)	Automotive	AEC-Q101	Through Hole	HiP247™
DMWS120H100SM4 SIC MOSFET BVDSS: >1000V TO247-4 Diodes Incorporated	27	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	37.2A (Tc)	15V	100mOhm @ 20A, 15V	3.5V @ 5mA	52 nC @ 15 V	+19V, -8V	1516 pF @ 1000 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4
STW65N023M9-4 N-CHANNEL 650 V, 19.9 MOHM TYP., STMicroelectronics	59	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	95A (Tc)	10V	23mOhm @ 48A, 10V	4.2V @ 250µA	230 nC @ 10 V	±30V	8844 pF @ 400 V	-	463W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.