FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
XP202A0003MR-G MOSFET P-CH 30V 3A SOT23 Torex Semiconductor Ltd	71	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	5A (Tj)	4V, 10V	45mOhm @ 1.5A, 10V	2.6V @ 1mA	10 nC @ 10 V	±20V	435 pF @ 10 V	-	1W	150°C	-	-	Surface Mount	SOT-23
TK8A25DA,S4X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	32	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	7.5A (Ta)	10V	500mOhm @ 3.8A, 10V	3.5V @ 1mA	16 nC @ 10 V	±20V	550 pF @ 100 V	-	30W (Tc)	150°C	-	-	Through Hole	TO-220SIS
FK4B01100LE SINGLE NCH MOSFET 12V, 3.4A, 27M Nuvoton Technology Corporation	1,000	RFQ	Datasheet	-	4-XFLGA, CSP	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12 V	3.4A (Ta)	1.5V, 4.5V	30mOhm @ 1.5A, 4.5V	1V @ 236µA	5.8 nC @ 4.5 V	±8V	275 pF @ 10 V	-	360mW (Ta)	-40°C ~ 85°C (TA)	Automotive	AEC-Q101	Surface Mount	4-CSP (0.8x0.8)
TK46A08N1,S4X MOSFET N-CH 80V 46A TO220SIS Toshiba Semiconductor and Storage	50	RFQ	Datasheet	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	46A (Tc)	10V	8.4mOhm @ 23A, 10V	4V @ 500µA	37 nC @ 10 V	±20V	2500 pF @ 40 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK5A45DA(STA4,Q,M) MOSFET N-CH 450V 4.5A TO220SIS Toshiba Semiconductor and Storage	28	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	450 V	4.5A (Ta)	10V	1.75Ohm @ 2.3A, 10V	4.4V @ 1mA	9 nC @ 10 V	±30V	380 pF @ 25 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK5A80E,S4X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	45	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	5A (Ta)	10V	2.4Ohm @ 2.5A, 10V	4V @ 500µA	20 nC @ 10 V	±30V	950 pF @ 25 V	-	40W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK2A65D(STA4,Q,M) MOSFET N-CH 650V 2A TO220SIS Toshiba Semiconductor and Storage	99	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	2A (Ta)	10V	3.26Ohm @ 1A, 10V	4.4V @ 1mA	9 nC @ 10 V	±30V	380 pF @ 25 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK35E08N1,S1X MOSFET N-CH 80V 55A TO220 Toshiba Semiconductor and Storage	41	RFQ	Datasheet	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	55A (Tc)	10V	12.2mOhm @ 17.5A, 10V	4V @ 300µA	25 nC @ 10 V	±20V	1700 pF @ 40 V	-	72W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK3A60DA(STA4,Q,M) MOSFET N-CH 600V 2.5A TO220SIS Toshiba Semiconductor and Storage	42	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	2.5A (Ta)	10V	2.8Ohm @ 1.3A, 10V	4.4V @ 1mA	9 nC @ 10 V	±30V	380 pF @ 25 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK4A80E,S4X PB-FPOWERMOSFETTRANSISTORTO-220S Toshiba Semiconductor and Storage	30	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	4A (Ta)	10V	3.5Ohm @ 2A, 10V	4V @ 400µA	15 nC @ 10 V	±30V	650 pF @ 25 V	-	35W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK46E08N1,S1X MOSFET N-CH 80V 80A TO220 Toshiba Semiconductor and Storage	58	RFQ	Datasheet	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	80A (Tc)	10V	8.4mOhm @ 23A, 10V	4V @ 500µA	37 nC @ 10 V	±20V	2500 pF @ 40 V	-	103W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK5A50D(STA4,Q,M) MOSFET N-CH 500V 5A TO220SIS Toshiba Semiconductor and Storage	55	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	5A (Ta)	10V	1.5Ohm @ 2.5A, 10V	4.4V @ 1mA	11 nC @ 10 V	±30V	490 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK5Q65W,S1Q MOSFET N-CH 650V 5.2A IPAK Toshiba Semiconductor and Storage	55	RFQ	Datasheet	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	5.2A (Ta)	10V	1.22Ohm @ 2.6A, 10V	3.5V @ 170µA	10.5 nC @ 10 V	±30V	380 pF @ 300 V	-	60W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
TK9A45D(STA4,Q,M) MOSFET N-CH 450V 9A TO220SIS Toshiba Semiconductor and Storage	50	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	450 V	9A (Ta)	10V	770mOhm @ 4.5A, 10V	4V @ 1mA	16 nC @ 10 V	±30V	800 pF @ 25 V	-	40W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
PSMN2R6-80YSFX PSMN2R6-80YSF/SOT1023/4 LEADS Nexperia USA Inc.	57	RFQ	Datasheet	-	SOT-1023, 4-LFPAK	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	231A (Ta)	10V	2.4mOhm @ 25A, 10V	4V @ 1mA	127 nC @ 10 V	±20V	8191 pF @ 40 V	-	294W (Ta)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	LFPAK56, Power-SO8
TK5A53D(STA4,Q,M) MOSFET N-CH 525V 5A TO220SIS Toshiba Semiconductor and Storage	50	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	525 V	5A (Ta)	10V	1.5Ohm @ 2.5A, 10V	4.4V @ 1mA	11 nC @ 10 V	±30V	540 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK6A50D(STA4,Q,M) MOSFET N-CH 500V 6A TO220SIS Toshiba Semiconductor and Storage	30	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	6A (Ta)	10V	1.4Ohm @ 3A, 10V	4.4V @ 1mA	11 nC @ 10 V	±30V	540 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
ISP16DP10LMAXTSA1 ISP16DP10LMAXTSA1 Infineon Technologies	1,000	RFQ	Datasheet	OptiMOS™	TO-261-4, TO-261AA	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	100 V	2.3A (Ta), 3.9A (Tc)	4.5V, 10V	167mOhm @ 2.2A, 10V	2V @ 1.037mA	55 nC @ 10 V	±20V	2100 pF @ 50 V	-	1.8W (Ta), 5W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-SOT223-4-21
TK6Q65W,S1Q MOSFET N-CH 650V 5.8A IPAK Toshiba Semiconductor and Storage	74	RFQ	Datasheet	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	5.8A (Ta)	10V	1.05Ohm @ 2.9A, 10V	3.5V @ 180µA	11 nC @ 10 V	±30V	390 pF @ 300 V	-	60W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
TK3R1E04PL,S1X MOSFET N-CH 40V 100A TO220 Toshiba Semiconductor and Storage	51	RFQ	Datasheet	U-MOSIX-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	100A (Tc)	4.5V, 10V	3.8mOhm @ 30A, 4.5V	2.4V @ 500µA	63.4 nC @ 10 V	±20V	4670 pF @ 20 V	-	87W (Tc)	175°C (TJ)	-	-	Through Hole	TO-220

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.