FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
S2M0025120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	46	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	70A (Tj)	20V	34mOhm @ 50A, 20V	4V @ 15mA	177 nC @ 20 V	+25V, -10V	4150 pF @ 1000 V	-	311W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
SCT025H120G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	85	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT018H65G3AG H2PAK-7 STMicroelectronics	100	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	55A (Tc)	15V, 18V	27mOhm @ 30A, 18V	4.2V @ 5mA	79.4 nC @ 18 V	+22V, -10V	2124 pF @ 400 V	-	385W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	H2PAK-7
S2M0080120N MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	36	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	54 nC @ 20 V	+20V, -5V	1324 pF @ 1000 V	-	176W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
SCT018W65G3-4AG TO247-4 STMicroelectronics	100	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	55A (Tc)	15V, 18V	27mOhm @ 30A, 18V	4.2V @ 5mA	77 nC @ 18 V	+22V, -10V	2077 pF @ 400 V	-	398W (Tc)	-55°C ~ 200°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
SCT025W120G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	100	RFQ	Datasheet	*	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT025W120G3-4AG TO247-4 STMicroelectronics	75	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	56A (Tc)	15V, 18V	37mOhm @ 25A, 18V	4.2V @ 5mA	73 nC @ 18 V	+18V, -5V	1990 pF @ 800 V	-	388W (Tc)	-55°C ~ 200°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
MSC015SMA070B4N MOSFET SIC 700 V 15 MOHM TO-247- Microchip Technology	60	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	700 V	112A (Tc)	18V, 20V	19mOhm @ 40A, 20V	5V @ 4mA	215 nC @ 20 V	+23V, -10V	4324 pF @ 700 V	-	524W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
SCT012W90G3-4AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	100	RFQ	Datasheet	*	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
S2M0040120N-1 MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	36	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	20V	52mOhm @ 40A, 20V	4V @ 10mA	92.1 nC @ 20 V	+20V, -5V	1904 pF @ 1000 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
SCT011HU75G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	50	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MSC017SMA120B4N MOSFET SIC 1200 V 17 MOHM TO-247 Microchip Technology	30	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	119A (Tc)	18V, 20V	22mOhm @ 40A, 20V	5V @ 4.5mA	194 nC @ 20 V	+23V, -10V	4274 pF @ 1200 V	-	577W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
MSC025SMA120B4N MOSFET SIC 1200 V 25 MOHM TO-247 Microchip Technology	30	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	113A (Tc)	18V, 20V	31mOhm @ 40A, 20V	5V @ 3mA	232 nC @ 20 V	+23V, -10V	3633 pF @ 1000 V	-	577W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
S3M0040120N MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	36	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	65A (Tc)	18V	52mOhm @ 40A, 18V	4V @ 16mA	143 nC @ 18 V	+20V, -8V	2844 pF @ 1000 V	-	483W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
IXTH1N300P3HV MOSFET N-CH 3000V 1A TO247HV Littelfuse Inc.	8	RFQ	Datasheet	Polar P3™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	3000 V	1A (Tc)	10V	50Ohm @ 500mA, 10V	4V @ 250µA	30.6 nC @ 10 V	±20V	895 pF @ 25 V	-	195W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247HV
AIMZHN120R020M1TXKSA1 SIC_DISCRETE Infineon Technologies	30	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	100A (Tc)	18V, 20V	25mOhm @ 43A, 20V	5.1V @ 13.7mA	82 nC @ 20 V	+23V, -5V	2667 pF @ 800 V	-	429W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-4-14
DMWSH120H28SM4Q SIC MOSFET BVDSS: >1000V TO247-4 Diodes Incorporated	38	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	100A (Tc)	15V	28.5mOhm @ 50A, 15V	3.6V @ 17.7mA	156.3 nC @ 15 V	+19V, -8V	-	-	429W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
S2M0025120N MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	34	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	104A (Tc)	20V	34mOhm @ 50A, 20V	4V @ 15mA	165 nC @ 20 V	+20V, -5V	4054 pF @ 1000 V	-	535W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
TM3B0020120A 1200V 20MOHM SIC MOSFET TO247-4 Coherent Corp	40	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
S3M0016120N MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	36	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	120A (Tc)	18V	23mOhm @ 75A, 18V	4V @ 30mA	287 nC @ 18 V	+22V, -8V	5251 pF @ 1000 V	-	732W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.