FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
APT50M65JLL MOSFET N-CH 500V 58A ISOTOP Microchip Technology	20	RFQ	Datasheet	POWER MOS 7®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	58A (Tc)	10V	65mOhm @ 29A, 10V	5V @ 2.5mA	141 nC @ 10 V	±30V	7010 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	ISOTOP®
MSC40SM120JCU3 SICFET N-CH 1.2KV 55A SOT227 Microchip Technology	66	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	20V	50mOhm @ 40A, 20V	2.7V @ 1mA	137 nC @ 20 V	+25V, -10V	1990 pF @ 1000 V	-	245W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227 (ISOTOP®)
MSC017SMA120J MOSFET SIC 1200V 17 MOHM SOT-227 Microchip Technology	17	RFQ	Datasheet	-	-	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	88A (Tc)	20V	22mOhm @ 40A, 20V	2.7V @ 4.5mA (Typ)	249 nC @ 20 V	+23V, -10V	5280 pF @ 1000 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	-	-	-	SOT-227
TW015N65C,S1F G3 650V SIC-MOSFET TO-247 15MOH Toshiba Semiconductor and Storage	52	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	100A (Tc)	18V	21mOhm @ 50A, 18V	5V @ 11.7mA	128 nC @ 18 V	+25V, -10V	4850 pF @ 400 V	-	342W (Tc)	175°C	-	-	Through Hole	TO-247
MSC100SM70JCU3 SICFET N-CH 700V 124A SOT227 Microchip Technology	14	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	700 V	124A (Tc)	20V	19mOhm @ 40A, 20V	2.4V @ 4mA	215 nC @ 20 V	+25V, -10V	4500 pF @ 700 V	-	365W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227 (ISOTOP®)
MSC70SM120JCU2 SICFET N-CH 1.2KV 89A SOT227 Microchip Technology	24	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	89A (Tc)	20V	31mOhm @ 40A, 20V	2.8V @ 1mA	232 nC @ 20 V	+25V, -10V	3020 pF @ 1000 V	-	395W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227 (ISOTOP®)
APT50M50JVFR MOSFET N-CH 500V 77A ISOTOP Microchip Technology	6	RFQ	Datasheet	POWER MOS V®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	77A (Tc)	-	50mOhm @ 500mA, 10V	4V @ 5mA	1000 nC @ 10 V	-	19600 pF @ 25 V	-	-	-	-	-	Chassis Mount	ISOTOP®
MSC130SM120JCU3 SICFET N-CH 1.2KV 173A SOT227 Microchip Technology	18	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	173A (Tc)	20V	16mOhm @ 80A, 20V	2.8V @ 2mA	464 nC @ 20 V	+25V, -10V	6040 pF @ 1000 V	-	745W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227 (ISOTOP®)
IXFN70N120SK SICFET N-CH 1200V 68A SOT227B IXYS	10	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	68A (Tc)	20V	34mOhm @ 50A, 20V	4V @ 15mA	161 nC @ 20 V	+20V, -5V	2790 pF @ 1000 V	-	-	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227B
MSCSM120DAM31CTBL1NG PM-MOSFET-SIC-SBD-BL1 Microchip Technology	23	RFQ	Datasheet	-	Module	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	79A	20V	31mOhm @ 40A, 20V	2.8V @ 1mA	232 nC @ 20 V	+25V, -10V	3020 pF @ 1000 V	-	310W	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	-
EPC7014UBSH GAN FET HEMT 60V 1A 4UB EPC Space, LLC	11	RFQ	Datasheet	e-GaN®	4-SMD, No Lead	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	60 V	1A (Tc)	5V	580mOhm @ 1A, 5V	2.5V @ 140µA	-	-	22 pF @ 30 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	4-SMD
FBG04N30BSH GAN FET HEMT 40V 30A 4FSMD-B EPC Space, LLC	13	RFQ	Datasheet	e-GaN®	4-SMD, No Lead	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	40 V	30A (Tc)	5V	9mOhm @ 30A, 5V	2.5V @ 9mA	11.4 nC @ 5 V	+6V, -4V	1300 pF @ 20 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	4-SMD
BSM180C12P3C202 SICFET N-CH 1200V 180A MODULE Rohm Semiconductor	9	RFQ	Datasheet	-	Module	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	180A (Tc)	-	-	5.6V @ 50mA	-	+22V, -4V	9000 pF @ 10 V	-	880W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module
TSM2N7002AKCU RFG 60V, 0.24A, SINGLE N-CHANNEL POW Taiwan Semiconductor Corporation	130	RFQ	Datasheet	-	SC-70, SOT-323	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	240mA (Ta)	4.5V, 10V	2.5Ohm @ 240mA, 10V	2.5V @ 250µA	0.68 nC @ 4.5 V	±20V	30 pF @ 30 V	-	298mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-323
ISP20EP10LMXTSA1 SMALL SIGNAL MOSFETS PG-SOT223-4 Infineon Technologies	1,000	RFQ	Datasheet	OptiMOS™	TO-261-4, TO-261AA	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	100 V	650mA (Ta), 990mA (Tc)	4.5V, 10V	2Ohm @ 600mA, 10V	2V @ 78µA	3.5 nC @ 10 V	±20V	170 pF @ 50 V	-	1.8W (Ta), 4.2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT223-4
NVJS4405NT1G MOSFET N-CH 25V 1A SC88 onsemi	687	RFQ	Datasheet	-	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	25 V	1A (Ta)	2.7V, 4.5V	350mOhm @ 600mA, 4.5V	1.5V @ 250µA	1.5 nC @ 4.5 V	±8V	60 pF @ 10 V	-	630mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SC-88/SC70-6/SOT-363
DMP2067LVT-7 MOSFET P-CH 20V 4.2A TSOT26 Diodes Incorporated	420	RFQ	Datasheet	-	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	2.5V, 4.5V	45mOhm @ 4.5A, 4.5V	1.5V @ 250µA	28 nC @ 8 V	±8V	1575 pF @ 10 V	-	1.2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TSOT-26
SSM6K404TU,LF MOSFET N-CH 20V 3A UF6 Toshiba Semiconductor and Storage	37	RFQ	Datasheet	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	3A (Ta)	1.5V, 4V	55mOhm @ 2A, 4V	1V @ 1mA	5.9 nC @ 4 V	±10V	400 pF @ 10 V	-	500mW (Ta)	150°C	-	-	Surface Mount	UF6
SI1480DH-T1-GE3 MOSFET N-CH 100V 2.6A SC70-6 Vishay Siliconix	955	RFQ	Datasheet	TrenchFET®	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	2.6A (Tc)	4.5V, 10V	200mOhm @ 1.9A, 10V	3V @ 250µA	5 nC @ 10 V	±20V	130 pF @ 50 V	-	1.5W (Ta), 2.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SC-70-6
MCH6353-TL-W MOSFET P-CH 12V 6A 6MCPH onsemi	636	RFQ	Datasheet	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	12 V	6A (Ta)	1.5V, 4.5V	35mOhm @ 3A, 4.5V	-	12 nC @ 4.5 V	±10V	1250 pF @ 6 V	-	1.4W (Ta)	150°C (TJ)	-	-	Surface Mount	6-MCPH

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.