FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
APT29F100B2 MOSFET N-CH 1000V 30A T-MAX Microchip Technology	11	RFQ	Datasheet	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	30A (Tc)	10V	440mOhm @ 16A, 10V	5V @ 2.5mA	260 nC @ 10 V	±30V	8500 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
TW060N120C,S1F G3 1200V SIC-MOSFET TO-247 60MO Toshiba Semiconductor and Storage	15	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	18V	78mOhm @ 18A, 18V	5V @ 4.2mA	46 nC @ 18 V	+25V, -10V	1530 pF @ 800 V	-	170W (Tc)	175°C	-	-	Through Hole	TO-247
GP2T040A120H SIC MOSFET 1200V 40M TO-247-4L SemiQ	60	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	63A (Tc)	20V	52mOhm @ 40A, 20V	4V @ 10mA	118 nC @ 20 V	+25V, -10V	3192 pF @ 1000 V	-	322W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
APT106N60LC6 MOSFET N-CH 600V 106A TO264 Microchip Technology	38	RFQ	Datasheet	CoolMOS™	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	106A (Tc)	10V	35mOhm @ 53A, 10V	3.5V @ 3.4mA	308 nC @ 10 V	±20V	8390 pF @ 25 V	-	833W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (L)
APT48M80L MOSFET N-CH 800V 49A TO264 Microchip Technology	82	RFQ	Datasheet	-	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	49A (Tc)	10V	200mOhm @ 24A, 10V	5V @ 2.5mA	305 nC @ 10 V	±30V	9330 pF @ 25 V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 [L]
APT10078BLLG MOSFET N-CH 1000V 14A TO247 Microchip Technology	30	RFQ	Datasheet	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	14A (Tc)	10V	780mOhm @ 7A, 10V	5V @ 1mA	95 nC @ 10 V	±30V	2525 pF @ 25 V	-	403W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
TW027N65C,S1F G3 650V SIC-MOSFET TO-247 27MOH Toshiba Semiconductor and Storage	35	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	58A (Tc)	18V	37mOhm @ 29A, 18V	5V @ 3mA	65 nC @ 18 V	+25V, -10V	2288 pF @ 400 V	-	156W (Tc)	175°C	-	-	Through Hole	TO-247
APT28M120B2 MOSFET N-CH 1200V 29A T-MAX Microchip Technology	56	RFQ	Datasheet	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	29A (Tc)	10V	560mOhm @ 14A, 10V	5V @ 2.5mA	300 nC @ 10 V	±30V	9670 pF @ 25 V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
APT10050LVRG MOSFET N-CH 1000V 21A TO264 Microchip Technology	25	RFQ	Datasheet	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	21A (Tc)	-	500mOhm @ 500mA, 10V	4V @ 2.5mA	500 nC @ 10 V	-	7900 pF @ 25 V	-	-	-	-	-	Through Hole	TO-264 [L]
MSC040SMA120B SICFET N-CH 1200V 66A TO247-3 Microchip Technology	35	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	66A (Tc)	20V	50mOhm @ 40A, 20V	2.7V @ 2mA	137 nC @ 20 V	+23V, -10V	1990 pF @ 1000 V	-	323W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
GCMX080B120S1-E1 SIC 1200V 80M MOSFET SOT-227 SemiQ	48	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	30A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	58 nC @ 20 V	+25V, -10V	1336 pF @ 1000 V	-	142W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
MSC040SMA120S SICFET N-CH 1200V 64A TO268 Microchip Technology	12	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	64A (Tc)	20V	50mOhm @ 40A, 20V	2.6V @ 2mA	137 nC @ 20 V	+23V, -10V	1990 pF @ 1000 V	-	303W	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D3PAK
GCMS080B120S1-E1 SIC 1200V 80M MOSFET & 10A SBD S SemiQ	37	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	30A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	58 nC @ 20 V	+25V, -10V	1374 pF @ 1000 V	-	142W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
TW030N120C,S1F G3 1200V SIC-MOSFET TO-247 30MO Toshiba Semiconductor and Storage	30	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	18V	40mOhm @ 30A, 18V	5V @ 13mA	82 nC @ 18 V	+25V, -10V	2925 pF @ 800 V	-	249W (Tc)	175°C	-	-	Through Hole	TO-247
IXTN40P50P MOSFET P-CH 500V 40A SOT227B Littelfuse Inc.	64	RFQ	Datasheet	PolarP™	SOT-227-4, miniBLOC	Tube	Active	P-Channel	MOSFET (Metal Oxide)	500 V	40A (Tc)	10V	230mOhm @ 500mA, 10V	4V @ 1mA	205 nC @ 10 V	±20V	11500 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
APT5010JVR MOSFET N-CH 500V 44A ISOTOP Microchip Technology	12	RFQ	Datasheet	POWER MOS V®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	44A (Tc)	-	100mOhm @ 500mA, 10V	4V @ 2.5mA	470 nC @ 10 V	-	8900 pF @ 25 V	-	-	-	-	-	Chassis Mount	ISOTOP®
APT5010JVFR MOSFET N-CH 500V 44A ISOTOP Microchip Technology	20	RFQ	Datasheet	POWER MOS V®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	44A (Tc)	-	100mOhm @ 500mA, 10V	4V @ 2.5mA	470 nC @ 10 V	-	8900 pF @ 25 V	-	-	-	-	-	Chassis Mount	ISOTOP®
MSC035SMA170S MOSFET SIC 1700V 35 MOHM TO-268 Microchip Technology	23	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	59A (Tc)	20V	45mOhm @ 30A, 20V	3.25V @ 2.5mA (Typ)	178 nC @ 20 V	+23V, -10V	3300 pF @ 1000 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D3PAK
IXFN170N30P MOSFET N-CH 300V 138A SOT-227B Littelfuse Inc.	7	RFQ	Datasheet	HiPerFET™, Polar	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	138A (Tc)	10V	18mOhm @ 85A, 10V	4.5V @ 1mA	258 nC @ 10 V	±20V	20000 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
MMIX1F420N10T MOSFET N-CH 100V 334A 24SMPD IXYS	60	RFQ	Datasheet	GigaMOS™, HiPerFET™, TrenchT2™	24-PowerSMD, 21 Leads	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	334A (Tc)	10V	2.6mOhm @ 60A, 10V	5V @ 8mA	670 nC @ 10 V	±20V	4700 pF @ 10 V	-	680W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	24-SMPD

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.