FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
NTHL190N65S3HF MOSFET N-CH 650V 20A TO247-3 onsemi	44	RFQ	Datasheet	FRFET®, SuperFET® III	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	190mOhm @ 10A, 10V	5V @ 430µA	34 nC @ 10 V	±30V	1610 pF @ 400 V	-	162W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
IXFQ28N60P3 MOSFET N-CH 600V 28A TO3P IXYS	63	RFQ	Datasheet	HiPerFET™, Polar3™	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	28A (Tc)	10V	260mOhm @ 14A, 10V	5V @ 2.5mA	50 nC @ 10 V	±30V	3560 pF @ 25 V	-	695W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3P
TK28N65W5,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	48	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	27.6A (Ta)	10V	130mOhm @ 13.8A, 10V	4.5V @ 1.6mA	90 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-247
IXTP01N100D MOSFET N-CH 1000V 400MA TO220AB Littelfuse Inc.	90	RFQ	Datasheet	Depletion	TO-220-3	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	1000 V	400mA (Tc)	0V	80Ohm @ 50mA, 0V	4.5V @ 25µA	5.8 nC @ 5 V	±20V	100 pF @ 25 V	-	1.1W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IXTH180N10T MOSFET N-CH 100V 180A TO247 Littelfuse Inc.	94	RFQ	Datasheet	Trench	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	180A (Tc)	10V	6.4mOhm @ 25A, 10V	4.5V @ 250µA	151 nC @ 10 V	±30V	6900 pF @ 25 V	-	480W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
IXTP80N075L2 MOSFET N-CH 75V 80A TO220AB Littelfuse Inc.	32	RFQ	Datasheet	Linear L2™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75 V	80A (Tc)	10V	24mOhm @ 40A, 10V	4.5V @ 250µA	103 nC @ 10 V	±20V	3600 pF @ 25 V	-	357W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IXTH120P065T MOSFET P-CH 65V 120A TO247 Littelfuse Inc.	88	RFQ	Datasheet	TrenchP™	TO-247-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	65 V	120A (Tc)	10V	10mOhm @ 500mA, 10V	4V @ 250µA	185 nC @ 10 V	±15V	13200 pF @ 25 V	-	298W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
TK31N60W5,S1VF MOSFET N-CH 600V 30.8A TO247 Toshiba Semiconductor and Storage	48	RFQ	Datasheet	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	99mOhm @ 15.4A, 10V	4.5V @ 1.5mA	105 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
IXFA34N65X3 MOSFET 34A 650V X3 TO263 Littelfuse Inc.	45	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	34A (Tc)	10V	100mOhm @ 17A, 10V	5.2V @ 2.5mA	29 nC @ 10 V	±20V	2025 pF @ 25 V	-	446W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA (IXFA)
IXTP6N100D2 MOSFET N-CH 1000V 6A TO220AB Littelfuse Inc.	63	RFQ	Datasheet	Depletion	TO-220-3	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	1000 V	6A (Tc)	-	2.2Ohm @ 3A, 0V	-	95 nC @ 5 V	±20V	2650 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
MSC080SMA120B4 SICFET N-CH 1200V 37A TO247-4 Microchip Technology	94	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	37A (Tc)	20V	100mOhm @ 15A, 20V	2.8V @ 1mA	64 nC @ 20 V	+23V, -10V	838 pF @ 1000 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
IXTP86N20X4 MOSFET 200V 86A N-CH ULTRA TO220 Littelfuse Inc.	26	RFQ	Datasheet	Ultra X4	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	86A (Tc)	10V	13mOhm @ 43A, 10V	4.5V @ 250µA	70 nC @ 10 V	±20V	2250 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220
MSC060SMA070B SICFET N-CH 700V 39A TO247-3 Microchip Technology	79	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	700 V	39A (Tc)	20V	75mOhm @ 20A, 20V	2.4V @ 1mA	56 nC @ 20 V	+23V, -10V	1175 pF @ 700 V	-	143W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
IXFH48N60X3 MOSFET ULTRA JCT 600V 48A TO247 Littelfuse Inc.	58	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	48A (Tc)	10V	65mOhm @ 24A, 10V	5V @ 2.5mA	38 nC @ 10 V	±20V	2730 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
TW107N65C,S1F G3 650V SIC-MOSFET TO-247 107MO Toshiba Semiconductor and Storage	68	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	20A (Tc)	18V	145mOhm @ 10A, 18V	5V @ 1.2mA	21 nC @ 18 V	+25V, -10V	600 pF @ 400 V	-	76W (Tc)	175°C	-	-	Through Hole	TO-247
TK39A60W,S4VX MOSFET N-CH 600V 38.8A TO220SIS Toshiba Semiconductor and Storage	54	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	38.8A (Ta)	10V	65mOhm @ 19.4A, 10V	3.7V @ 1.9mA	110 nC @ 10 V	±30V	4100 pF @ 300 V	-	50W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
NTH4L060N090SC1 SILICON CARBIDE MOSFET, NCHANNEL onsemi	33	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	900 V	46A (Tc)	15V, 18V	43mOhm @ 20A, 18V	4.3V @ 5mA	87 nC @ 15 V	+22V, -8V	1770 pF @ 450 V	-	221W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
MSC060SMA070S SICFET N-CH 700V 37A D3PAK Microchip Technology	92	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	700 V	37A (Tc)	20V	75mOhm @ 20A, 20V	2.4V @ 1mA (Typ)	56 nC @ 20 V	+23V, -10V	1175 pF @ 700 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D3PAK
APT1204R7BFLLG MOSFET N-CH 1200V 3.5A TO247 Microchip Technology	43	RFQ	Datasheet	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	3.5A (Tc)	10V	4.7Ohm @ 1.75A, 10V	5V @ 1mA	31 nC @ 10 V	±30V	715 pF @ 25 V	-	135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
IXFH86N30T MOSFET N-CH 300V 86A TO247AD Littelfuse Inc.	6	RFQ	Datasheet	HiPerFET™, Trench	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	86A (Tc)	10V	43mOhm @ 43A, 10V	5V @ 4mA	180 nC @ 10 V	±20V	11300 pF @ 25 V	-	860W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.