FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TK17A80W,S4X MOSFET N-CH 800V 17A TO220SIS Toshiba Semiconductor and Storage	91	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	17A (Ta)	10V	290mOhm @ 8.5A, 10V	4V @ 850µA	32 nC @ 10 V	±20V	2050 pF @ 300 V	-	45W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK25A60X,S5X MOSFET N-CH 600V 25A TO220SIS Toshiba Semiconductor and Storage	34	RFQ	Datasheet	DTMOSIV-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	25A (Ta)	10V	125mOhm @ 7.5A, 10V	3.5V @ 1.2mA	40 nC @ 10 V	±30V	2400 pF @ 300 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
RCX700N20 MOSFET N-CH 200V 70A TO220FM Rohm Semiconductor	40	RFQ	Datasheet	-	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	200 V	70A (Tc)	10V	42.7mOhm @ 35A, 10V	5V @ 1mA	125 nC @ 10 V	±30V	6900 pF @ 25 V	-	2.23W (Ta), 40W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220FM
TK110E65Z,S1X 650V DTMOS VI TO-220 110MOHM Toshiba Semiconductor and Storage	50	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	24A (Ta)	10V	110mOhm @ 12A, 10V	4V @ 1.02mA	40 nC @ 10 V	±30V	2250 pF @ 300 V	-	190W (Tc)	150°C	-	-	Through Hole	TO-220
STW7NK90Z MOSFET N-CH 900V 5.8A TO247-3 STMicroelectronics	54	RFQ	Datasheet	SuperMESH™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	5.8A (Tc)	10V	2Ohm @ 2.9A, 10V	4.5V @ 100µA	60.5 nC @ 10 V	±30V	1350 pF @ 25 V	-	140W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
IXTA1N120P MOSFET N-CH 1200V 1A TO263 Littelfuse Inc.	94	RFQ	Datasheet	Polar	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	1A (Tc)	10V	20Ohm @ 500mA, 10V	4.5V @ 50µA	17.6 nC @ 10 V	±20V	550 pF @ 25 V	-	63W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA
IPW60R160C6FKSA1 MOSFET N-CH 600V 23.8A TO247-3 Infineon Technologies	56	RFQ	Datasheet	CoolMOS™	TO-247-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	160mOhm @ 11.3A, 10V	3.5V @ 750µA	75 nC @ 10 V	±20V	1660 pF @ 100 V	-	176W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1
CSD19505KTTT MOSFET N-CH 80V 200A DDPAK Texas Instruments	117	RFQ	Datasheet	NexFET™	TO-263-4, D2PAK (3 Leads + Tab), TO-263AA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	200A (Ta)	6V, 10V	3.1mOhm @ 100A, 10V	3.2V @ 250µA	76 nC @ 10 V	±20V	7920 pF @ 40 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (DDPAK-3)
TK17E80W,S1X MOSFET N-CHANNEL 800V 17A TO220 Toshiba Semiconductor and Storage	44	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	17A (Ta)	10V	290mOhm @ 8.5A, 10V	4V @ 850µA	32 nC @ 10 V	±20V	2050 pF @ 300 V	-	180W (Tc)	150°C	-	-	Through Hole	TO-220
APT30F50B MOSFET N-CH 500V 30A TO247 Microchip Technology	95	RFQ	Datasheet	POWER MOS 8™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	30A (Tc)	10V	190mOhm @ 14A, 10V	5V @ 1mA	115 nC @ 10 V	±30V	4525 pF @ 25 V	-	415W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
IXFP5N100P MOSFET N-CH 1000V 5A TO220AB IXYS	26	RFQ	Datasheet	HiPerFET™, Polar	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	5A (Tc)	10V	2.8Ohm @ 500mA, 10V	6V @ 250µA	33.4 nC @ 10 V	±30V	1830 pF @ 25 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
STF15NM65N MOSFET N-CH 650V 12A TO220FP STMicroelectronics	84	RFQ	Datasheet	MDmesh™ II	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	380mOhm @ 6A, 10V	4V @ 250µA	33.3 nC @ 10 V	±25V	983 pF @ 50 V	-	30W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FP
TK090E65Z,S1X 650V DTMOS VI TO-220 90MOHM Toshiba Semiconductor and Storage	61	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	30A (Ta)	10V	90mOhm @ 15A, 10V	4V @ 1.27mA	47 nC @ 10 V	±30V	2780 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-220
APT9M100S MOSFET N-CH 1000V 9A D3PAK Microchip Technology	47	RFQ	Datasheet	POWER MOS 8™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	9A (Tc)	10V	1.4Ohm @ 5A, 10V	5V @ 1mA	80 nC @ 10 V	±30V	2605 pF @ 25 V	-	335W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D3PAK
TK20J60W,S1VE X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	33	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Ta)	10V	155mOhm @ 10A, 10V	3.7V @ 1mA	48 nC @ 10 V	±30V	1680 pF @ 300 V	-	165W (Tc)	150°C	-	-	Through Hole	TO-3P(N)
IRFP064PBF MOSFET N-CH 60V 70A TO247-3 Vishay Siliconix	69	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	70A (Tc)	10V	9mOhm @ 78A, 10V	4V @ 250µA	190 nC @ 10 V	±20V	7400 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC
TK31E60X,S1X MOSFET N-CH 600V 30.8A TO220 Toshiba Semiconductor and Storage	87	RFQ	Datasheet	DTMOSIV-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK31N60X,S1F MOSFET N-CH 600V 30.8A TO247 Toshiba Semiconductor and Storage	26	RFQ	Datasheet	DTMOSIV-H	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
TK090N65Z,S1F MOSFET N-CH 650V 30A TO247 Toshiba Semiconductor and Storage	26	RFQ	Datasheet	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	30A (Ta)	10V	90mOhm @ 15A, 10V	4V @ 1.27mA	47 nC @ 10 V	±30V	2780 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-247
IPA075N15N3GXKSA1 MOSFET N-CH 150V 43A TO220-3 Infineon Technologies	61	RFQ	Datasheet	OptiMOS™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	43A (Tc)	8V, 10V	7.5mOhm @ 43A, 10V	4V @ 270µA	93 nC @ 10 V	±20V	7280 pF @ 75 V	-	39W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-FP

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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