FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IXFH50N50P3 MOSFET N-CH 500V 50A TO247AD IXYS	76	RFQ	Datasheet	HiPerFET™, Polar3™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	50A (Tc)	10V	120mOhm @ 25A, 10V	5V @ 4mA	85 nC @ 10 V	±30V	4335 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
TK62N60X,S1F MOSFET N-CH 600V 61.8A TO247 Toshiba Semiconductor and Storage	82	RFQ	Datasheet	DTMOSIV-H	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	61.8A (Ta)	10V	40mOhm @ 21A, 10V	3.5V @ 3.1mA	135 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
TK49N65W5,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	30	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	49.2A (Ta)	10V	57mOhm @ 24.6A, 10V	4.5V @ 2.5mA	185 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C	-	-	Through Hole	TO-247
TK39J60W5,S1VQ MOSFET N-CH 600V 38.8A TO3P Toshiba Semiconductor and Storage	31	RFQ	Datasheet	DTMOSIV	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	38.8A (Ta)	10V	65mOhm @ 19.4A, 10V	3.7V @ 1.9mA	135 nC @ 10 V	±30V	4100 pF @ 300 V	-	270W (Tc)	150°C (TJ)	-	-	Through Hole	TO-3P(N)
IMZA65R039M1HXKSA1 SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies	83	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	50A (Tc)	18V	50mOhm @ 25A, 18V	5.7V @ 7.5mA	41 nC @ 18 V	+20V, -2V	1393 pF @ 400 V	-	176W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-3
TK31Z60X,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	26	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-247-4L(T)
TK49N65W,S1F PB-F POWER MOSFET TRANSISTOR TO2 Toshiba Semiconductor and Storage	6	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	49.2A (Ta)	10V	55mOhm @ 24.6A, 10V	3.5V @ 2.5mA	160 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C	-	-	Through Hole	TO-247
APT20M38BVRG MOSFET N-CH 200V 67A TO247 Microchip Technology	44	RFQ	Datasheet	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	67A (Tc)	10V	38mOhm @ 500mA, 10V	4V @ 1mA	225 nC @ 10 V	±30V	6120 pF @ 25 V	-	370W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
APT56F50B2 MOSFET N-CH 500V 56A T-MAX Microchip Technology	58	RFQ	Datasheet	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	56A (Tc)	10V	100mOhm @ 28A, 10V	5V @ 2.5mA	220 nC @ 10 V	±30V	8800 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
IXTQ88N30P MOSFET N-CH 300V 88A TO3P Littelfuse Inc.	43	RFQ	Datasheet	Polar	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	88A (Tc)	10V	40mOhm @ 44A, 10V	5V @ 250µA	180 nC @ 10 V	±20V	6300 pF @ 25 V	-	600W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3P
MSC080SMA120S SICFET N-CH 1200V 35A D3PAK Microchip Technology	24	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	35A	20V	100mOhm @ 15A, 20V	2.8V @ 1mA	64 nC @ 20 V	+23V, -10V	838 pF @ 1000 V	-	182W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D3PAK
IXTT48P20P MOSFET P-CH 200V 48A TO268 Littelfuse Inc.	92	RFQ	Datasheet	PolarP™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	48A (Tc)	10V	85mOhm @ 500mA, 10V	4.5V @ 250µA	103 nC @ 10 V	±20V	5400 pF @ 25 V	-	462W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA
IXFX98N50P3 MOSFET N-CH 500V 98A PLUS247-3 Littelfuse Inc.	64	RFQ	Datasheet	HiPerFET™, Polar3™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	98A (Tc)	10V	50mOhm @ 500mA, 10V	5V @ 8mA	197 nC @ 10 V	±30V	13100 pF @ 25 V	-	1300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3
APT5014BLLG MOSFET N-CH 500V 35A TO247 Microchip Technology	41	RFQ	Datasheet	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	35A (Tc)	10V	140mOhm @ 17.5A, 10V	5V @ 1mA	72 nC @ 10 V	±30V	3261 pF @ 25 V	-	403W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
MSC035SMA070S MOSFET N-CH 700V D3PAK Microchip Technology	68	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	700 V	65A (Tc)	20V	44mOhm @ 30A, 20V	2.7V @ 1mA	99 nC @ 20 V	+23V, -10V	2010 pF @ 700 V	-	206W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D3PAK
APT106N60B2C6 MOSFET N-CH 600V 106A T-MAX Microchip Technology	38	RFQ	Datasheet	CoolMOS™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	106A (Tc)	10V	35mOhm @ 53A, 10V	3.5V @ 3.4mA	308 nC @ 10 V	±20V	8390 pF @ 25 V	-	833W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
TW048N65C,S1F G3 650V SIC-MOSFET TO-247 48MOH Toshiba Semiconductor and Storage	29	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	40A (Tc)	18V	65mOhm @ 20A, 18V	5V @ 1.6mA	41 nC @ 18 V	+25V, -10V	1362 pF @ 400 V	-	132W (Tc)	175°C	-	-	Through Hole	TO-247
TK62Z60X,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	11	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	61.8A (Ta)	10V	40mOhm @ 21A, 10V	3.5V @ 3.1mA	135 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C	-	-	Through Hole	TO-247-4L(T)
APT5010LVRG MOSFET N-CH 500V 47A TO264 Microchip Technology	19	RFQ	Datasheet	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	47A (Tc)	-	100mOhm @ 500mA, 10V	4V @ 2.5mA	470 nC @ 10 V	-	8900 pF @ 25 V	-	-	-	-	-	Through Hole	TO-264 [L]
IXTT40N50L2 MOSFET N-CH 500V 40A TO268 Littelfuse Inc.	47	RFQ	Datasheet	Linear L2™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	40A (Tc)	10V	170mOhm @ 20A, 10V	4.5V @ 250µA	320 nC @ 10 V	±20V	10400 pF @ 25 V	-	540W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.