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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK7E80W,S1X Toshiba Semiconductor and Storage

TK7E80W,S1X

MOSFET N-CH 800V 6.5A TO220

Toshiba Semiconductor and Storage

70
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Ta) 10V 950mOhm @ 3.3A, 10V 4V @ 280µA 13 nC @ 10 V ±20V 700 pF @ 300 V - 110W (Tc) 150°C - - Through Hole TO-220
TK14E65W,S1X Toshiba Semiconductor and Storage

TK14E65W,S1X

MOSFET N-CH 650V 13.7A TO220

Toshiba Semiconductor and Storage

48
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 250mOhm @ 6.9A, 10V 3.5V @ 690µA 35 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) - - Through Hole TO-220
TK20A60W5,S5VX Toshiba Semiconductor and Storage

TK20A60W5,S5VX

MOSFET N-CH 600V 20A TO220SIS

Toshiba Semiconductor and Storage

31
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 175mOhm @ 10A, 10V 4.5V @ 1mA 55 nC @ 10 V ±30V 1800 pF @ 300 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK4R9E15Q5,S1X Toshiba Semiconductor and Storage

TK4R9E15Q5,S1X

150V UMOS10-HSD TO-220 4.9MOHM

Toshiba Semiconductor and Storage

89
Datasheet U-MOSX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 120A (Tc) 8V, 10V 4.9mOhm @ 50A, 10V 4.5V @ 2.2mA 96 nC @ 10 V ±20V 7820 pF @ 75 V - 300W (Tc) 175°C - - Through Hole TO-220
TK18A50D(STA4,Q,M) Toshiba Semiconductor and Storage

TK18A50D(STA4,Q,M)

MOSFET N-CH 500V 18A TO220SIS

Toshiba Semiconductor and Storage

46
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Ta) 10V 270mOhm @ 9A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2600 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK19A45D(STA4,Q,M) Toshiba Semiconductor and Storage

TK19A45D(STA4,Q,M)

MOSFET N-CH 450V 19A TO220SIS

Toshiba Semiconductor and Storage

31
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 19A (Ta) 10V 250mOhm @ 9.5A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2600 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK080N60Z1,S1F Toshiba Semiconductor and Storage

TK080N60Z1,S1F

600V DTMOS6 TO-247 80MOHM

Toshiba Semiconductor and Storage

30
Datasheet DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Ta) 10V 80mOhm @ 10.3A, 10V 4V @ 1.17mA 43 nC @ 10 V ±30V 2510 pF @ 300 V - 211W (Tc) 150°C - - Through Hole TO-247
TK12A60W,S4VX Toshiba Semiconductor and Storage

TK12A60W,S4VX

MOSFET N-CH 600V 11.5A TO220SIS

Toshiba Semiconductor and Storage

79
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK28E65W,S1X Toshiba Semiconductor and Storage

TK28E65W,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

50
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 110mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C - - Through Hole TO-220
TK25E60X5,S1X Toshiba Semiconductor and Storage

TK25E60X5,S1X

MOSFET N-CH 600V 25A TO220

Toshiba Semiconductor and Storage

100
Datasheet DTMOSIV-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 140mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) - - Through Hole TO-220
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

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