JIEXIN Electronics — Your one-stop global supplier of chips and electronic components.
FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK16V60W5,LVQ Toshiba Semiconductor and Storage

TK16V60W5,LVQ

PB-F POWER MOSFET TRANSISTOR DTM

Toshiba Semiconductor and Storage

2,260
Datasheet DTMOSIV 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 245mOhm @ 7.9A, 10V 4.5V @ 790µA 43 nC @ 10 V ±30V 1350 pF @ 300 V - 139W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
TK14V65W,LQ Toshiba Semiconductor and Storage

TK14V65W,LQ

PB-F POWER MOSFET TRANSISTOR DTM

Toshiba Semiconductor and Storage

2,394
Datasheet DTMOSIV 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 280mOhm @ 6.9A, 10V 3.5V @ 690µA 35 nC @ 10 V ±30V 1300 pF @ 300 V - 139W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
TK5R0A15Q5,S4X Toshiba Semiconductor and Storage

TK5R0A15Q5,S4X

150V UMOS10-HSD TO-220SIS 5MOHM

Toshiba Semiconductor and Storage

380
Datasheet U-MOSX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 150 V 76A (Ta), 76A (Tc) 8V, 10V 5mOhm @ 38A, 10V 4.5V @ 2.2mA 96 nC @ 10 V ±20V 7820 pF @ 75 V - 53W (Tc) 175°C - - Through Hole TO-220SIS
TK25V60X5,LQ Toshiba Semiconductor and Storage

TK25V60X5,LQ

PB-F POWER MOSFET TRANSISTOR DTM

Toshiba Semiconductor and Storage

2,488
Datasheet DTMOSIV 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 150mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
TK22V65X5,LQ Toshiba Semiconductor and Storage

TK22V65X5,LQ

PB-F POWER MOSFET TRANSISTOR DFN

Toshiba Semiconductor and Storage

2,500
Datasheet DTMOSIV-H 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Ta) 10V 170mOhm @ 11A, 10V 4.5V @ 1.1mA 50 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
TK16G60W,RVQ Toshiba Semiconductor and Storage

TK16G60W,RVQ

MOSFET N CH 600V 15.8A D2PAK

Toshiba Semiconductor and Storage

984
Datasheet DTMOSIV TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C (TJ) - - Surface Mount D2PAK
TK095N65Z5,S1F(S Toshiba Semiconductor and Storage

TK095N65Z5,S1F(S

650V DTMOS6-HIGH SPEED DIODE

Toshiba Semiconductor and Storage

195
Datasheet DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 29A (Ta) 10V 95mOhm @ 14.5A, 10V 4.5V @ 1.27mA 50 nC @ 10 V ±30V 2880 pF @ 300 V - 230W (Tc) 150°C - - Through Hole TO-247
TK068N65Z5,S1F Toshiba Semiconductor and Storage

TK068N65Z5,S1F

650V DTMOS6-HSD TO-247 68MOHM

Toshiba Semiconductor and Storage

235
Datasheet DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 37A (Ta) 10V 68mOhm @ 18.5A, 10V 4.5V @ 1.69mA 68 nC @ 10 V ±30V 3765 pF @ 300 V - 270W (Tc) 150°C - - Through Hole TO-247
TK31V60W,LVQ Toshiba Semiconductor and Storage

TK31V60W,LVQ

MOSFET N-CH 600V 30.8A 4DFN

Toshiba Semiconductor and Storage

2,455
Datasheet DTMOSIV 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 98mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V - 240W (Tc) 150°C (TJ) - - Surface Mount 4-DFN-EP (8x8)
TW048Z65C,S1F Toshiba Semiconductor and Storage

TW048Z65C,S1F

G3 650V SIC-MOSFET TO-247-4L 48

Toshiba Semiconductor and Storage

243
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 40A (Tc) 18V 69mOhm @ 20A, 18V 5V @ 1.6mA 41 nC @ 18 V +25V, -10V 1362 pF @ 400 V - 132W (Tc) 175°C - - Through Hole TO-247-4L(X)
Total 814 Record«Prev1... 1617181920212223...82Next»
FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

Need Help Narrowing Down the Right FETs, MOSFETs Part?

Send your target specifications, preferred manufacturer, quantity or reference part number. Our team can help check matching options, availability and quotation details for your sourcing requirement.

BOM BOM Phone +86-138 0989 9356 Email info@jx-icsource.com Cart Shopping Cart Account My Account Back To Top