Single Diodes
Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RB208RSM15STL1150V 15A, TO-277A, ULTRA LOW SBD |
4,000 |
|
Datasheet | - | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 150 V | 15A | 880 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8.3 µA @ 150 V | - | - | - | Surface Mount | TO-277A | 175°C |
|
NRVTS30120MFST3GDIODE SCHOTTKY 120V 30A 5DFN |
4,304 |
|
Datasheet | - | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | Schottky | 120 V | 30A | 950 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 120 V | 1470pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
|
DSC08C065D1-13SILICON CARBIDE RECTIFIER TO252 |
2,495 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 650 V | 278pF @ 100mV, 1MHz | - | - | Surface Mount | TO-252 (Type WX) | -55°C ~ 175°C |
|
FFSP0665BDIODE SIL CARB 650V 8A TO220-2 |
483 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 259pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
DST2060DJFDIODE SCHOTTKY 60V 20A 8DFN |
14,843 |
|
Datasheet | - | 8-PowerVDFN | Tape & Reel (TR) | Active | Schottky | 60 V | 20A | 750 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 60 V | - | - | - | Surface Mount | 8-PDFN (5x6) | -55°C ~ 150°C |
|
PSDP3060L1_T0_00001TO-220AC, FAST |
3,935 |
|
Datasheet | - | TO-220-2 | Tube | Active | Standard | 600 V | 30A | 1.8 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 115 ns | 250 µA @ 600 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 150°C |
|
VS-6EWH06FNTRHM3DIODE GEN PURP 600V 6A D-PAK |
2,000 |
|
Datasheet | FRED Pt® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | Standard | 600 V | 6A | 2.1 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 50 µA @ 600 V | - | Automotive | AEC-Q101 | Surface Mount | TO-252AA (DPAK) | -65°C ~ 175°C |
|
YQ12RSM10SDTFTL1TRENCH MOS STRUCTURE, 100V, 12A |
4,000 |
|
Datasheet | - | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 100 V | 12A | 670 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 90 µA @ 100 V | - | Automotive | AEC-Q101 | Surface Mount | TO-277A | 175°C |
|
TRS4E65H,S1QG3 SIC-SBD 650V 4A TO-220-2L |
341 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.35 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 55 µA @ 650 V | 263pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
|
SE30DT12HM3/IDIODE GEN PURP 1.2KV 30A SMPD |
1,243 |
|
Datasheet | eSMP® | TO-263-3, D2PAK (2 Leads + Tab), Variant | Tape & Reel (TR) | Active | Standard | 1200 V | 30A | 1.29 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | 3.4 µs | 10 µA @ 1200 V | 132pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | SMPD | -55°C ~ 175°C |
|
SDS065J004D3-ISARHDIODE 650V-4A TO220-2L |
150 |
|
Datasheet | Sanan TO252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 14A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 12 µA @ 650 V | 213pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2L | -55°C ~ 175°C |
|
UF1008F_T0_00001ITO-220AC, ULTRA |
1,738 |
|
Datasheet | - | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 800 V | 10A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 1 µA @ 800 V | 50pF @ 4V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
|
SIT08C065DIODE SIL CARB 650V 8A TO220AC |
1,000 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 µA @ 650 V | - | - | - | Through Hole | TO-220AC | -50°C ~ 175°C |
|
YQ20NL10SDTLTRENCH MOS STRUCTURE, 100V, 20A |
988 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Schottky | 100 V | 20A | 960 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 70 µA @ 100 V | - | - | - | Surface Mount | TO-263L | 150°C |
|
P2500XDIODE AVALANCHE 1800V 25A P600 |
940 |
|
Datasheet | - | P600, Axial | Cut Tape (CT) | Active | Avalanche | 1800 V | 25A | 1.1 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 1800 V | - | - | - | Through Hole | P-600 | -50°C ~ 175°C |
|
VS-30ETH06STRR-M3DIODE GEN PURP 600V 30A TO263AB |
4,542 |
|
Datasheet | FRED Pt® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 30A | 2.6 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 50 µA @ 600 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -65°C ~ 175°C |
|
YQ15RSM10SDTFTL1TRENCH MOS STRUCTURE, 100V, 15A |
3,328 |
|
Datasheet | - | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 100 V | 15A | 680 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | - | Automotive | AEC-Q101 | Surface Mount | TO-277A | 175°C |
|
FFSH1065B-F155650V 10A SIC SBD GEN 1.5 |
153 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 11.5A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 421pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
VS-20ATS12HM3DIODE GEN PURP 1.2KV 20A TO220-3 |
975 |
|
Datasheet | - | TO-220-3 | Tube | Active | Standard | 1200 V | 20A | 1.1 V @ 20 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1200 V | - | Automotive | AEC-Q101 | Through Hole | TO-220-3 | -40°C ~ 150°C |
|
SDS120J002C3-ISATHDIODE 1200V-2A TO220-2L |
169 |
|
Datasheet | Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 11A | 1.5 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 8 µA @ 1200 V | 165pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
Frequently Asked Questions
What are Single Diodes components used for?
Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right Single Diodes part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.