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Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
RB208RSM15STL1 Rohm Semiconductor

RB208RSM15STL1

150V 15A, TO-277A, ULTRA LOW SBD

Rohm Semiconductor

4,000
Datasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 150 V 15A 880 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 8.3 µA @ 150 V - - - Surface Mount TO-277A 175°C
NRVTS30120MFST3G onsemi

NRVTS30120MFST3G

DIODE SCHOTTKY 120V 30A 5DFN

onsemi

4,304
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active Schottky 120 V 30A 950 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 120 V 1470pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL) -55°C ~ 175°C
DSC08C065D1-13 Diodes Incorporated

DSC08C065D1-13

SILICON CARBIDE RECTIFIER TO252

Diodes Incorporated

2,495
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 650 V 278pF @ 100mV, 1MHz - - Surface Mount TO-252 (Type WX) -55°C ~ 175°C
FFSP0665B onsemi

FFSP0665B

DIODE SIL CARB 650V 8A TO220-2

onsemi

483
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 259pF @ 1V, 100kHz - - Through Hole TO-220-2 -55°C ~ 175°C
DST2060DJF Littelfuse Inc.

DST2060DJF

DIODE SCHOTTKY 60V 20A 8DFN

Littelfuse Inc.

14,843
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active Schottky 60 V 20A 750 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 60 V - - - Surface Mount 8-PDFN (5x6) -55°C ~ 150°C
PSDP3060L1_T0_00001 Panjit International Inc.

PSDP3060L1_T0_00001

TO-220AC, FAST

Panjit International Inc.

3,935
Datasheet - TO-220-2 Tube Active Standard 600 V 30A 1.8 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 115 ns 250 µA @ 600 V - - - Through Hole TO-220AC -55°C ~ 150°C
VS-6EWH06FNTRHM3 Vishay General Semiconductor - Diodes Division

VS-6EWH06FNTRHM3

DIODE GEN PURP 600V 6A D-PAK

Vishay General Semiconductor - Diodes Division

2,000
Datasheet FRED Pt® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 6A 2.1 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 50 µA @ 600 V - Automotive AEC-Q101 Surface Mount TO-252AA (DPAK) -65°C ~ 175°C
YQ12RSM10SDTFTL1 Rohm Semiconductor

YQ12RSM10SDTFTL1

TRENCH MOS STRUCTURE, 100V, 12A

Rohm Semiconductor

4,000
Datasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 12A 670 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 90 µA @ 100 V - Automotive AEC-Q101 Surface Mount TO-277A 175°C
TRS4E65H,S1Q Toshiba Semiconductor and Storage

TRS4E65H,S1Q

G3 SIC-SBD 650V 4A TO-220-2L

Toshiba Semiconductor and Storage

341
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 4A 1.35 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 55 µA @ 650 V 263pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
SE30DT12HM3/I Vishay General Semiconductor - Diodes Division

SE30DT12HM3/I

DIODE GEN PURP 1.2KV 30A SMPD

Vishay General Semiconductor - Diodes Division

1,243
Datasheet eSMP® TO-263-3, D2PAK (2 Leads + Tab), Variant Tape & Reel (TR) Active Standard 1200 V 30A 1.29 V @ 30 A Standard Recovery >500ns, > 200mA (Io) 3.4 µs 10 µA @ 1200 V 132pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount SMPD -55°C ~ 175°C
SDS065J004D3-ISARH Luminus Devices Inc.

SDS065J004D3-ISARH

DIODE 650V-4A TO220-2L

Luminus Devices Inc.

150
Datasheet Sanan TO252 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 14A 1.5 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 12 µA @ 650 V 213pF @ 0V, 1MHz - - Surface Mount TO-252-2L -55°C ~ 175°C
UF1008F_T0_00001 Panjit International Inc.

UF1008F_T0_00001

ITO-220AC, ULTRA

Panjit International Inc.

1,738
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active Standard 800 V 10A 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 1 µA @ 800 V 50pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
SIT08C065 Diotec Semiconductor

SIT08C065

DIODE SIL CARB 650V 8A TO220AC

Diotec Semiconductor

1,000
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 20 µA @ 650 V - - - Through Hole TO-220AC -50°C ~ 175°C
YQ20NL10SDTL Rohm Semiconductor

YQ20NL10SDTL

TRENCH MOS STRUCTURE, 100V, 20A

Rohm Semiconductor

988
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 100 V 20A 960 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 70 µA @ 100 V - - - Surface Mount TO-263L 150°C
P2500X Diotec Semiconductor

P2500X

DIODE AVALANCHE 1800V 25A P600

Diotec Semiconductor

940
Datasheet - P600, Axial Cut Tape (CT) Active Avalanche 1800 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 1800 V - - - Through Hole P-600 -50°C ~ 175°C
VS-30ETH06STRR-M3 Vishay General Semiconductor - Diodes Division

VS-30ETH06STRR-M3

DIODE GEN PURP 600V 30A TO263AB

Vishay General Semiconductor - Diodes Division

4,542
Datasheet FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 30A 2.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 50 µA @ 600 V - - - Surface Mount TO-263AB (D2PAK) -65°C ~ 175°C
YQ15RSM10SDTFTL1 Rohm Semiconductor

YQ15RSM10SDTFTL1

TRENCH MOS STRUCTURE, 100V, 15A

Rohm Semiconductor

3,328
Datasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 15A 680 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V - Automotive AEC-Q101 Surface Mount TO-277A 175°C
FFSH1065B-F155 onsemi

FFSH1065B-F155

650V 10A SIC SBD GEN 1.5

onsemi

153
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 11.5A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 421pF @ 1V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
VS-20ATS12HM3 Vishay General Semiconductor - Diodes Division

VS-20ATS12HM3

DIODE GEN PURP 1.2KV 20A TO220-3

Vishay General Semiconductor - Diodes Division

975
Datasheet - TO-220-3 Tube Active Standard 1200 V 20A 1.1 V @ 20 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - Automotive AEC-Q101 Through Hole TO-220-3 -40°C ~ 150°C
SDS120J002C3-ISATH Luminus Devices Inc.

SDS120J002C3-ISATH

DIODE 1200V-2A TO220-2L

Luminus Devices Inc.

169
Datasheet Sanan TO220 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 11A 1.5 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 8 µA @ 1200 V 165pF @ 0V, 1MHz - - Through Hole TO-220-2L -55°C ~ 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

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Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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