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Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
UGF12JDH Taiwan Semiconductor Corporation

UGF12JDH

DIODE GEN PURP 600V 12A ITO220AC

Taiwan Semiconductor Corporation

1,000
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 12A 3.1 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 600 V - Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 175°C
VS-3C04EV07T-M3/I Vishay General Semiconductor - Diodes Division

VS-3C04EV07T-M3/I

SIC-G3-SLIMDPAK 2L

Vishay General Semiconductor - Diodes Division

4,120
Datasheet eSMP® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 4A 1.5 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 650 V 175pF @ 1V, 1MHz - - Surface Mount SlimDPAK -55°C ~ 175°C
C3D03065E-TR Wolfspeed, Inc.

C3D03065E-TR

DIODE SCHOTTKY 650V 11A TO252-2

Wolfspeed, Inc.

2,450
Datasheet Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 11A 1.8 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 650 V 155pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
RR601BGE4STL Rohm Semiconductor

RR601BGE4STL

DIODE GEN PURP 400V 6A TO252GE

Rohm Semiconductor

1,485
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 400 V 6A 1.1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V - - - Surface Mount TO-252GE 150°C
YQ10RSM10SDTFTL1 Rohm Semiconductor

YQ10RSM10SDTFTL1

TRENCH MOS STRUCTURE, 100V, 10A,

Rohm Semiconductor

3,675
Datasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 10A 670 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 80 µA @ 100 V - Automotive AEC-Q101 Surface Mount TO-277A 150°C
SBR12U45LH1-13R Diodes Incorporated

SBR12U45LH1-13R

DIODE SBR 45V 12A POWERDI5SP

Diodes Incorporated

5,980
Datasheet SBR® PowerDI™ 5SP Tape & Reel (TR) Active Super Barrier 45 V 12A 500 mV @ 12 A Standard Recovery >500ns, > 200mA (Io) - 300 µA @ 45 V - - - Surface Mount PowerDI5SP™ -65°C ~ 150°C
NRTS30100MFST3G onsemi

NRTS30100MFST3G

DIODE SCHOTTKY 100V 30A 5DFN

onsemi

4,770
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active Schottky 100 V 30A 760 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V 2540pF @ 1V, 1MHz - - Surface Mount 5-DFN (5x6) (8-SOFL) -55°C ~ 175°C
RB218RSM10STL1 Rohm Semiconductor

RB218RSM10STL1

100V 20A, TO-277A, ULTRA LOW I

Rohm Semiconductor

4,000
Datasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 20A 880 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 5.2 µA @ 100 V - - - Surface Mount TO-277A 175°C
RB208RSM10STL1 Rohm Semiconductor

RB208RSM10STL1

100V 15A, TO-277A, ULTRA LOW SUB

Rohm Semiconductor

4,000
Datasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 15A 850 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 5.2 µA @ 100 V - - - Surface Mount TO-277A 175°C
ESW6006 Diotec Semiconductor

ESW6006

DIODE GEN PURP 600V 60A TO247

Diotec Semiconductor

444
Datasheet - TO-247-2 Tube Active Standard 600 V 60A 1.8 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 85 ns 50 µA @ 600 V - - - Through Hole TO-247 -50°C ~ 175°C
1N914UR/TR Microchip Technology

1N914UR/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

104
Datasheet - DO-213AA Tape & Reel (TR) Active Standard 75 V 200mA 1.2 V @ 50 mA Small Signal =< 200mA (Io), Any Speed 5 ns 500 nA @ 75 V 4pF @ 0V, 1MHz - - Surface Mount DO-213AA -65°C ~ 175°C
P2500W Diotec Semiconductor

P2500W

DIODE AVALANCHE 1600V 25A P600

Diotec Semiconductor

266
Datasheet - P600, Axial Cut Tape (CT) Active Avalanche 1600 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 1600 V - - - Through Hole P-600 -50°C ~ 175°C
VS-10ETS10STRR-M3 Vishay General Semiconductor - Diodes Division

VS-10ETS10STRR-M3

DIODE GEN PURP 1KV 10A TO263AB

Vishay General Semiconductor - Diodes Division

7,970
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1000 V 10A 1.1 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1000 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
VS-10ETF12STRL-M3 Vishay General Semiconductor - Diodes Division

VS-10ETF12STRL-M3

DIODE GEN PURP 1.2KV 10A TO263AB

Vishay General Semiconductor - Diodes Division

6,548
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 10A 1.33 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 310 ns 100 µA @ 1200 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
VB20150SG-E3/8W Vishay General Semiconductor - Diodes Division

VB20150SG-E3/8W

DIODE SCHOTTKY 150V 20A TO263AB

Vishay General Semiconductor - Diodes Division

5,825
Datasheet TMBS® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 150 V 20A 1.6 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 150 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
P2500T Diotec Semiconductor

P2500T

DIODE AVALANCHE 1300V 25A P600

Diotec Semiconductor

936
Datasheet - P600, Axial Cut Tape (CT) Active Avalanche 1300 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 1300 V - - - Through Hole P-600 -50°C ~ 175°C
TRS4V65H,LQ Toshiba Semiconductor and Storage

TRS4V65H,LQ

G3 SIC-SBD 650V 4A DFN8X8

Toshiba Semiconductor and Storage

4,648
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 4A 1.34 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 55 µA @ 650 V 263pF @ 1V, 1MHz - - Surface Mount 4-DFN-EP (8x8) 175°C
DSC06A065D1-13 Diodes Incorporated

DSC06A065D1-13

SILICON CARBIDE RECTIFIER TO252

Diodes Incorporated

2,117
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.5 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 650 V 278pF @ 100mV, 1MHz - - Surface Mount TO-252 (Type WX) -55°C ~ 175°C
SFAF1604GH Taiwan Semiconductor Corporation

SFAF1604GH

35NS, 16A, 200V, SUPER FAST RECO

Taiwan Semiconductor Corporation

1,000
Datasheet - TO-220-2 Full Pack Tube Active Standard 200 V 16A 975 mV @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 130pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
VS-C4PH3006L-N3 Vishay General Semiconductor - Diodes Division

VS-C4PH3006L-N3

DIODE GEN PURP 600V 15A TO247AD

Vishay General Semiconductor - Diodes Division

496
Datasheet FRED Pt® TO-247-3 Tube Active Standard 600 V 15A 1.9 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 15 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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