Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VFT3080S-E3/4W DIODE SCHOTTKY 80V 30A TO220-3 Vishay General Semiconductor - Diodes Division	1,938	RFQ	Datasheet	-	TO-220-3	Tube	Active	Schottky	80 V	30A	950 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 80 V	-	-	-	Through Hole	TO-220-3	-55°C ~ 150°C
MURB15120L-TP SUPER FAST RECOVERY RECTIFIER Micro Commercial Co	1,510	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	1200 V	15A	3.2 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	5 µA @ 1200 V	55pF @ 4V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 150°C
SFF2004G DIODE GEN PURP 200V 20A ITO220AB Taiwan Semiconductor Corporation	964	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	Standard	200 V	20A	975 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	90pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AB	-55°C ~ 150°C
SBR10U200P5-13D Super Barrier Rectifier PDI5 T&R Diodes Incorporated	4,998	RFQ	Datasheet	-	PowerDI™ 5	Tape & Reel (TR)	Active	Super Barrier	200 V	10A	880 mV @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 200 V	-	-	-	Surface Mount	PowerDI™ 5	-65°C ~ 175°C
SFF2006GH DIODE GEN PURP 400V 20A ITO220AB Taiwan Semiconductor Corporation	994	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	Standard	400 V	20A	1.3 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	90pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	ITO-220AB	-55°C ~ 150°C
SFF2006G DIODE GEN PURP 400V 20A ITO220AB Taiwan Semiconductor Corporation	940	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	Standard	400 V	20A	1.3 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	90pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AB	-55°C ~ 150°C
DSC06C065D1-13 SILICON CARBIDE RECTIFIER TO252 Diodes Incorporated	2,490	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	170 µA @ 650 V	184pF @ 100mV, 1MHz	-	-	Surface Mount	TO-252 (Type WX)	-55°C ~ 175°C
DSC04A065D1-13 SILICON CARBIDE RECTIFIER TO252 Diodes Incorporated	2,465	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.5 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	-	170 µA @ 650 V	184pF @ 100mV, 1MHz	-	-	Surface Mount	TO-252 (Type WX)	-55°C ~ 175°C
SR1504 DIODE SCHOTTKY 40V 15A R-6 Taiwan Semiconductor Corporation	1,465	RFQ	Datasheet	-	R-6, Axial	Tape & Reel (TR)	Not For New Designs	Schottky	40 V	15A	550 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	-	-	Through Hole	R-6	-50°C ~ 150°C
SFAF1604G DIODE GEN PURP 200V 16A ITO220AC Taiwan Semiconductor Corporation	998	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	200 V	16A	975 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	130pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
TRS2E65H,S1Q G3 SIC-SBD 650V 2A TO-220-2L Toshiba Semiconductor and Storage	335	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	2A	1.35 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	135pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	175°C
RFN6RSM2STFTL1 200V 6A 14NS, TO-277A, ULTRA FAS Rohm Semiconductor	4,000	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Standard	200 V	6A	930 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 200 V	-	Automotive	AEC-Q101	Surface Mount	TO-277A	175°C
BYW76RAS15-10 DIODE AVALANCHE 600V 3A SOD64 Vishay General Semiconductor - Diodes Division	2,000	RFQ	Datasheet	-	-	Bulk	Active	Avalanche	600 V	3A	1.1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 600 V	-	-	-	-	-	-55°C ~ 175°C
YQ10RSM10SDTL1 TRENCH MOS STRUCTURE, 100V, 10A, Rohm Semiconductor	3,945	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	100 V	10A	670 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 100 V	-	-	-	Surface Mount	TO-277A	150°C
SFAF1608GH DIODE GEN PURP 600V 16A ITO220AC Taiwan Semiconductor Corporation	1,000	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	16A	1.7 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	100pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	ITO-220AC	-55°C ~ 150°C
SFAF1608G DIODE GEN PURP 600V 16A ITO220AC Taiwan Semiconductor Corporation	991	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	16A	1.7 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	100pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
RB078BM30SFHHTL 30V 5A, TO-252, ULTRA LOW IR SBD Rohm Semiconductor	2,500	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Schottky	30 V	5A	720 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 30 V	-	Automotive	AEC-Q101	Surface Mount	TO-252	175°C
SFS1604G DIODE GEN PURP 200V 16A TO263AB Taiwan Semiconductor Corporation	1,665	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	200 V	16A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	80pF @ 4V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 150°C
SFS1604GH DIODE GEN PURP 200V 16A TO263AB Taiwan Semiconductor Corporation	1,586	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	200 V	16A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	80pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 150°C
P2000MTL DIODE GEN PURP 1000V 20A P600 Diotec Semiconductor	961	RFQ	Datasheet	-	P600, Axial	Cut Tape (CT)	Active	Standard	1000 V	20A	1.1 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 1000 V	-	-	-	Through Hole	P-600	-50°C ~ 175°C

FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.