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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
DSEP90-12AZ-TUB IXYS

DSEP90-12AZ-TUB

DIODE GEN PURP 1.2KV 90A TO268AA

IXYS

156
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active Standard 1200 V 90A 2.69 V @ 90 A Fast Recovery =< 500ns, > 200mA (Io) 85 ns 1 mA @ 1200 V 48pF @ 600V, 1MHz - - Surface Mount TO-268AA (D3Pak-HV) -55°C ~ 175°C
VS-88HF80 Vishay General Semiconductor - Diodes Division

VS-88HF80

DIODE GEN PURP 800V 85A DO203AB

Vishay General Semiconductor - Diodes Division

152
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 800 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
1N2130AR GeneSiC Semiconductor

1N2130AR

DIODE GEN PURP REV 150V 60A DO5

GeneSiC Semiconductor

245
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 150 V 60A 1.1 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount DO-5 -65°C ~ 200°C
MSC020SDA120S Microchip Technology

MSC020SDA120S

DIODE SIL CARB 1.2KV 49A D3PAK

Microchip Technology

869
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active SiC (Silicon Carbide) Schottky 1200 V 49A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1130pF @ 1V, 1MHz - - Surface Mount D3PAK -55°C ~ 175°C
VS-85HFR80 Vishay General Semiconductor - Diodes Division

VS-85HFR80

DIODE GEN PURP 800V 85A DO203AB

Vishay General Semiconductor - Diodes Division

300
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 800 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 800 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
STPSC40065CWY STMicroelectronics

STPSC40065CWY

DIODE SIL CARB 650V 20A TO247-3

STMicroelectronics

207
Datasheet ECOPACK®2 TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.45 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 650 V 1250pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole TO-247-3 -40°C ~ 175°C
VS-80APF12-M3 Vishay General Semiconductor - Diodes Division

VS-80APF12-M3

DIODE GEN PURP 1.2KV 80A TO247AC

Vishay General Semiconductor - Diodes Division

384
Datasheet - TO-247-3 Tube Active Standard 1200 V 80A 1.35 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) 480 ns 100 µA @ 1200 V - - - Through Hole TO-247AC -40°C ~ 150°C
JANTX1N5190 Microchip Technology

JANTX1N5190

DIODE GEN PURP 600V 3A AXIAL

Microchip Technology

189
Datasheet - B, Axial Bulk Active Standard 600 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 2 µA @ 600 V - Military MIL-PRF-19500/424 Through Hole B, Axial -
SICPT40120Y-BP Micro Commercial Co

SICPT40120Y-BP

DIODE SIC 1.2KV 40A TO247AD

Micro Commercial Co

1,774
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 40A 1.6 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 2938pF @ 0V, 1MHz - - Through Hole TO-247AD -55°C ~ 175°C
DSEP60-12AR IXYS

DSEP60-12AR

DIODE GP 1.2KV 60A ISOPLUS247

IXYS

275
Datasheet HiPerFRED™ ISOPLUS247™ Tube Active Standard 1200 V 60A 2.66 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 650 µA @ 1200 V - - - Through Hole ISOPLUS247™ (BR) -55°C ~ 175°C
S4D40120H SMC Diode Solutions

S4D40120H

DIODE SIC 1.2KV 128A TO247AC

SMC Diode Solutions

687
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 128A 1.8 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 1200 V 3227pF @ 0V, 1MHz - - Through Hole TO-247AC -55°C ~ 175°C
S85Q GeneSiC Semiconductor

S85Q

DIODE GEN PURP 1.2KV 85A DO5

GeneSiC Semiconductor

370
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1200 V 85A 1.1 V @ 85 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 100 V - - - Chassis, Stud Mount DO-5 -65°C ~ 180°C
IDW40G65C5BXKSA2 Infineon Technologies

IDW40G65C5BXKSA2

DIODE SIL CARB 650V 20A TO247-3

Infineon Technologies

240
Datasheet CoolSiC™+ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 210 µA @ 650 V 590pF @ 1V, 1MHz - - Through Hole PG-TO247-3 -55°C ~ 175°C
MSC050SDA070BCT Microchip Technology

MSC050SDA070BCT

DIODE SIL CARB 700V 88A TO247-3

Microchip Technology

274
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 700 V 88A 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 700 V 2034pF @ 1V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
122NQ030-1 SMC Diode Solutions

122NQ030-1

DIODE SCHOTTKY 30V 120A PRM1-1

SMC Diode Solutions

298
Datasheet - HALF-PAK Bulk Active Schottky 30 V 120A 490 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 30 V 7400pF @ 5V, 1MHz - - Chassis Mount PRM1-1 (Half Pak Module) -55°C ~ 150°C
248NQ100-2 SMC Diode Solutions

248NQ100-2

DIODE SCHOTTKY 100V 240A PRM1-1

SMC Diode Solutions

178
Datasheet - HALF-PAK Bulk Active Schottky 100 V 240A 950 mV @ 240 A Fast Recovery =< 500ns, > 200mA (Io) - 6 mA @ 100 V 5277pF @ 5V, 1MHz - - Chassis Mount PRM1-1 (Half Pak Module) -55°C ~ 175°C
242NQ030-1 SMC Diode Solutions

242NQ030-1

DIODE SCHOTTKY 30V PRM1-1

SMC Diode Solutions

211
Datasheet - HALF-PAK Bulk Active Schottky 30 V - 510 mV @ 240 A Fast Recovery =< 500ns, > 200mA (Io) - 20 mA @ 30 V 14800pF @ 5V, 1MHz - - Chassis Mount PRM1-1 (Half Pak Module) -55°C ~ 150°C
UES1306HR2/TR Microchip Technology

UES1306HR2/TR

DIODE GEN PURP 400V 5A B AXIAL

Microchip Technology

193
Datasheet - B, Axial Tape & Reel (TR) Active Standard 400 V 5A 1 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 20 µA @ 400 V - - - Through Hole B, Axial -
1N4004-E3/73 Vishay General Semiconductor - Diodes Division

1N4004-E3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

27,000
Datasheet - DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 400 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V 15pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
NSVBAS116LT3G onsemi

NSVBAS116LT3G

DIODE GEN PURP 75V 200MA SOT23-3

onsemi

11,537
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active Standard 75 V 200mA 1.25 V @ 150 mA Small Signal =< 200mA (Io), Any Speed 3 µs 5 nA @ 75 V - Automotive AEC-Q101 Surface Mount SOT-23-3 (TO-236) -55°C ~ 150°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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