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ELECTRONIC COMPONENTS

FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TPC8133,LQ(S Toshiba Semiconductor and Storage

TPC8133,LQ(S

MOSFET P-CH 40V 9A 8SOP

Toshiba Semiconductor and Storage

20
Datasheet U-MOSVI 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 9A (Ta) 4.5V, 10V 15mOhm @ 4.5A, 10V 2V @ 500µA 64 nC @ 10 V +20V, -25V 2900 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
IAUCN04S7N019DATMA1 Infineon Technologies

IAUCN04S7N019DATMA1

MOSFET_(20V 40V)

Infineon Technologies

5,533
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SIR5802DP-T1-BE3 Vishay Siliconix

SIR5802DP-T1-BE3

N-CHANNEL 80 V (D-S) MOSFET 150C

Vishay Siliconix

8,618
Datasheet TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 33.6A (Ta), 137.5A (Tc) 7.5V, 10V 2.9mOhm @ 20A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 3020 pF @ 40 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SISS40DN-T1-GE3 Vishay Siliconix

SISS40DN-T1-GE3

MOSFET N-CH 100V 36.5A PPAK

Vishay Siliconix

8,491
Datasheet ThunderFET® PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 36.5A (Tc) 6V, 10V 21mOhm @ 10A, 10V 3.5V @ 250µA 24 nC @ 10 V ±20V 845 pF @ 50 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
NVMFWS015N10MCLT1G onsemi

NVMFWS015N10MCLT1G

PTNG 100V LL NCH SO-8FL WETTABLE

onsemi

6,604
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 10.5A (Ta), 54A (Tc) 4.5V, 10V 12.2mOhm @ 14A, 10V 3V @ 77µA 19 nC @ 10 V ±20V 1338 pF @ 50 V - 3W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
MCU055P10-TP Micro Commercial Co

MCU055P10-TP

P-CHANNEL MOSFET,DPAK

Micro Commercial Co

5,545
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 4.5V, 10V 55mOhm @ 20A, 10V 2.5V @ 250µA 71 nC @ 10 V ±20V 3480 pF @ 50 V - 89W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
SIHP22N60E-E3 Vishay Siliconix

SIHP22N60E-E3

MOSFET N-CH 600V 21A TO220AB

Vishay Siliconix

5,915
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
NVTYS002N03CLTWG onsemi

NVTYS002N03CLTWG

T6 30V N-CH LL IN LFPAK33

onsemi

2,939
Datasheet - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 29A (Ta), 140A (Tc) 4.5V, 10V 2.25mOhm @ 50A, 10V 2.2V @ 250µA 37 nC @ 10 V ±20V 2697 pF @ 15 V - 3.2W (Ta), 75W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
TK42E12N1,S1X Toshiba Semiconductor and Storage

TK42E12N1,S1X

MOSFET N CH 120V 88A TO-220

Toshiba Semiconductor and Storage

8
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 88A (Tc) 10V 9.4mOhm @ 21A, 10V 4V @ 1mA 52 nC @ 10 V ±20V 3100 pF @ 60 V - 140W (Tc) 150°C (TJ) - - Through Hole TO-220
NVTYS005N06CLTWG onsemi

NVTYS005N06CLTWG

T6 60V N-CH LL IN LFPAK33

onsemi

2,950
Datasheet - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Ta), 89A (Tc) 4.5V, 10V 5.3mOhm @ 50A, 10V 2.2V @ 75µA 25 nC @ 10 V ±20V 1890 pF @ 25 V - 3.2W (Ta), 76W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
SIR580DP-T1-BE3 Vishay Siliconix

SIR580DP-T1-BE3

N-CHANNEL 80 V (D-S) MOSFET 150C

Vishay Siliconix

3,933
Datasheet TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 35.8A (Ta), 146A (Tc) 7.5V, 10V 2.7mOhm @ 20A, 10V 4V @ 250µA 76 nC @ 10 V ±20V 4100 pF @ 40 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIR514DP-T1-BE3 Vishay Siliconix

SIR514DP-T1-BE3

N-CHANNEL 100 V (D-S) MOSFET 150

Vishay Siliconix

8,815
Datasheet TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 20.8A (Ta), 84.8A (Tc) 7.5V, 10V 5.8mOhm @ 10A, 10V 4V @ 250µA 47 nC @ 10 V ±20V 2550 pF @ 50 V - 5W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIR572DP-T1-BE3 Vishay Siliconix

SIR572DP-T1-BE3

N-CHANNEL 150 V (D-S) MOSFET 150

Vishay Siliconix

6,279
Datasheet TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 14.8A (Ta), 59.7A (Tc) 7.5V, 10V 10.8mOhm @ 10A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 2733 pF @ 75 V - 5.7W (Ta), 92.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
DI020P06PT-AQ Diotec Semiconductor

DI020P06PT-AQ

MOSFET, POWERQFN 3X3, -60V, -20A

Diotec Semiconductor

2,950
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active P-Channel - - 20A - - - - - - - 29.7W - - - Surface Mount 8-QFN (3x3)
NVMFWS024N06CT1G onsemi

NVMFWS024N06CT1G

T6 60V SG HIGHER RDS-ON PORTFOLI

onsemi

9,914
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Ta), 25A (Tc) 10V 22mOhm @ 3A, 10V 4V @ 20µA 5.7 nC @ 10 V ±20V 333 pF @ 30 V - 3.4W (Ta), 28W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
TK5A55D(STA4,Q,M) Toshiba Semiconductor and Storage

TK5A55D(STA4,Q,M)

MOSFET N-CH 550V 5A TO220SIS

Toshiba Semiconductor and Storage

14
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 5A (Ta) 10V 1.7Ohm @ 2.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
NVTFWS8D1N08HTAG onsemi

NVTFWS8D1N08HTAG

80V T8 IN U8FL HEFET PACK

onsemi

6,721
Datasheet - 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 14A (Ta), 61A (Tc) 6V, 10V 8.3mOhm @ 16A, 10V 4V @ 270µA 23 nC @ 10 V ±20V 1450 pF @ 40 V - 3.8W (Ta), 75W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFNW (3.3x3.3)
TK7A45DA(STA4,Q,M) Toshiba Semiconductor and Storage

TK7A45DA(STA4,Q,M)

MOSFET N-CH 450V 6.5A TO220SIS

Toshiba Semiconductor and Storage

9,863
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 6.5A (Ta) 10V 1.2Ohm @ 3.3A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
NVMFS020N06CT1G onsemi

NVMFS020N06CT1G

MOSFET N-CH 60V 9A/28A 5DFN

onsemi

3,151
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 9A (Ta), 28A (Tc) 10V 19.6mOhm @ 4A, 10V 4V @ 20µA 5.8 nC @ 10 V ±20V 355 pF @ 30 V - 3.4W (Ta), 31W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
NVMFS016N06CT1G onsemi

NVMFS016N06CT1G

MOSFET N-CH 60V 10A/33A 5DFN

onsemi

8,169
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Ta), 33A (Tc) 10V 15.6mOhm @ 5A, 10V 4V @ 25µA 6.9 nC @ 10 V ±20V 489 pF @ 30 V - 3.4W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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