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FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
PJQ4546P-AU_R2_002A1 Panjit International Inc.

PJQ4546P-AU_R2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

7,286
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 15.7A (Ta), 64A (Tc) 4.5V, 10V 5.6mOhm @ 15A, 10V 2.3V @ 50µA 20 nC @ 10 V ±20V 1320 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN3333-8
PJQ4453EP-AU_R2_002A1 Panjit International Inc.

PJQ4453EP-AU_R2_002A1

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,023
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 11A (Ta), 55A (Tc) 4.5V, 10V 11.6mOhm @ 10A, 10V 2.5V @ 250µA 56 nC @ 10 V ±25V 2858 pF @ 25 V - 2.5W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN3333-8
IPD040N03LF2SATMA1 Infineon Technologies

IPD040N03LF2SATMA1

IPD040N03LF2SATMA1

Infineon Technologies

2,255
Datasheet StrongIRFET™ 2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 73A (Tc) 4.5V, 10V 4.05mOhm @ 40A, 10V 2.35V @ 30µA 41 nC @ 10 V ±20V 1800 pF @ 15 V - 3W (Ta), 75W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-34
SIHP15N60E-E3 Vishay Siliconix

SIHP15N60E-E3

MOSFET N-CH 600V 15A TO220AB

Vishay Siliconix

3,208
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 78 nC @ 10 V ±30V 1350 pF @ 100 V - 180W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIRA60DP-T1-UE3 Vishay Siliconix

SIRA60DP-T1-UE3

N-CHANNEL 30 V (D-S) MOSFET 150

Vishay Siliconix

7,276
Datasheet TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 56A (Ta), 100A (Tc) 4.5V, 10V 0.94mOhm @ 20A, 10V 2.2V @ 250µA 125 nC @ 10 V +20V, -16V 7650 pF @ 15 V - 5W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIJ4409DP-T1-GE3 Vishay Siliconix

SIJ4409DP-T1-GE3

P-CHANNEL 40 V (D-S) MOSFET 150C

Vishay Siliconix

8,755
Datasheet - PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 15.5A (Ta), 43.6A (Tc) 4.5V, 10V 9.6mOhm @ 15A, 10V 2.3V @ 250µA 126 nC @ 10 V ±20V 5670 pF @ 20 V - 2.6W (Ta), 32.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
NVLJWS6D0N04CLTAG onsemi

NVLJWS6D0N04CLTAG

T6 40V LL 2X2 WDFNW6

onsemi

3,947
Datasheet - 6-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 15A (Ta), 68A (Tc) 4.5V, 10V 5mOhm @ 10A, 10V 2V @ 34µA 20 nC @ 10 V ±20V 1150 pF @ 25 V - 2.5W (Ta), 46W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 6-WDFNW (2.05x2.05)
SISA10BDN-T1-GE3 Vishay Siliconix

SISA10BDN-T1-GE3

N-CHANNEL 30-V (D-S) MOSFET POWE

Vishay Siliconix

7,472
Datasheet TrenchFET® Gen IV PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 26A (Ta), 104A (Tc) 4.5V, 10V 3.6mOhm @ 10A, 10V 2.4V @ 250µA 36.2 nC @ 10 V +20V, -16V 1710 pF @ 15 V - 3.8W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
TPH2R903PL,L1Q Toshiba Semiconductor and Storage

TPH2R903PL,L1Q

PB-FPOWERMOSFETTRANSISTORSOP8-AD

Toshiba Semiconductor and Storage

7,519
Datasheet U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 2.9mOhm @ 35A, 10V 2.1V @ 200µA 26 nC @ 10 V ±20V 2300 pF @ 15 V - 960mW (Ta), 81W (Tc) 175°C - - Surface Mount 8-SOP Advance (5x5)
SIR574DP-T1-BE3 Vishay Siliconix

SIR574DP-T1-BE3

N-CHANNEL 150 V (D-S) MOSFET 150

Vishay Siliconix

5,178
Datasheet TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 12.1A (Ta), 48.1A (Tc) 7.5V, 10V 13.5mOhm @ 10A, 10V 4V @ 250µA 48 nC @ 10 V ±20V 2300 pF @ 75 V - 5W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SQ3418AEEV-T1_GE3 Vishay Siliconix

SQ3418AEEV-T1_GE3

MOSFET N-CHANNEL 30V 7.8A 6TSOP

Vishay Siliconix

9,334
Datasheet TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 8A 4.5V, 10V 35mOhm @ 6A, 10V 2.5V @ 250µA 3.5 nC @ 4.5 V ±20V 528 pF @ 25 V - 5W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 6-TSOP
BUK9Y6R0-60RAX Nexperia USA Inc.

BUK9Y6R0-60RAX

BUK9Y6R0-60RA/SOT669/LFPAK

Nexperia USA Inc.

5,135
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
BSC0580NSATMA1 Infineon Technologies

BSC0580NSATMA1

TRENCH <= 40V

Infineon Technologies

3,676
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SIJ5623DP-T1-GE3 Vishay Siliconix

SIJ5623DP-T1-GE3

P-CHANNEL 60 V (D-S) MOSFET 150C

Vishay Siliconix

8,975
Datasheet - PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 9.3A (Ta), 26.1A (Tc) 4.5V, 10V 24mOhm @ 10A, 10V 2.6V @ 250µA 33 nC @ 10 V ±20V 1575 pF @ 30 V - 4.1W (Ta), 32.9W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
STB76NF75 STMicroelectronics

STB76NF75

MOSFET N-CH 75V 80A D2PAK

STMicroelectronics

7,848
Datasheet STripFET™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 11mOhm @ 40A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHA180N60E-GE3 Vishay Siliconix

SIHA180N60E-GE3

MOSFET N-CH 600V 19A TO220

Vishay Siliconix

2,317
Datasheet E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 180mOhm @ 9.5A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1085 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
NVTYS005N04CTWG onsemi

NVTYS005N04CTWG

T6 40V N-CH SL IN LFPAK33

onsemi

2,039
Datasheet - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 18A (Ta), 71A (Tc) 10V 5.6mOhm @ 35A, 10V 3.5V @ 40µA 16 nC @ 10 V ±20V 1000 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
TSM4NB60CP ROG Taiwan Semiconductor Corporation

TSM4NB60CP ROG

MOSFET N-CHANNEL 600V 4A TO252

Taiwan Semiconductor Corporation

9
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.5Ohm @ 2A, 10V 4.5V @ 250µA 14.5 nC @ 10 V ±30V 500 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
COM-24144 SparkFun Electronics

COM-24144

N-CHANNEL MOSFET 55V 30A

SparkFun Electronics

4
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4V, 10V 35mOhm @ 16A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
NVTYS004N04CTWG onsemi

NVTYS004N04CTWG

T6 40V N-CH SL IN LFPAK33

onsemi

9,244
Datasheet - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 78A (Tc) 10V 4mOhm @ 20A, 10V 3.5V @ 50µA 19 nC @ 10 V ±20V 1210 pF @ 25 V - 3.2W (Ta), 55W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

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Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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