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ELECTRONIC COMPONENTS

FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
PSMD099N10LS2_L2_00601 Panjit International Inc.

PSMD099N10LS2_L2_00601

Exc FOM/100V/9.9m/TO-252AA

Panjit International Inc.

6,105
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SISS5708DN-T1-BE3 Vishay Siliconix

SISS5708DN-T1-BE3

N-CHANNEL 150 V (D-S) MOSFET 150

Vishay Siliconix

8,791
Datasheet TrenchFET® Gen V PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 9.3A (Ta), 33.8A (Tc) 7.5V, 10V 23mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 975 pF @ 75 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
STF80N1K1K6 STMicroelectronics

STF80N1K1K6

N-CHANNEL 800 V, 1.0 OHM TYP., 5

STMicroelectronics

7,644
Datasheet ECOPACK® TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 1.1Ohm @ 1.7A, 10V 4V @ 50µA 5.7 nC @ 10 V ±30V 300 pF @ 400 V - 21W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
SIHP186N60EF-GE3 Vishay Siliconix

SIHP186N60EF-GE3

MOSFET N-CH 600V 18A TO220AB

Vishay Siliconix

9,844
Datasheet EF TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 193mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1081 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIR516DP-T1-BE3 Vishay Siliconix

SIR516DP-T1-BE3

N-CHANNEL 100 V (D-S) MOSFET 150

Vishay Siliconix

8,291
Datasheet TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 16.8A (Ta), 63.7A (Tc) 7.5V, 10V 8mOhm @ 10A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 1920 pF @ 50 V - 5W (Ta), 71.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
PJQ5568A-AU_R2_002A1 Panjit International Inc.

PJQ5568A-AU_R2_002A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

9,924
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IAUCN08S7L110ATMA1 Infineon Technologies

IAUCN08S7L110ATMA1

IAUCN08S7L110ATMA1

Infineon Technologies

6,745
Datasheet OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 50A (Tj) 4.5V, 10V 11mOhm @ 20A, 10V 2V @ 14µA 19.3 nC @ 10 V ±16V 1056 pF @ 40 V - 58W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-34
SIR582DP-T1-BE3 Vishay Siliconix

SIR582DP-T1-BE3

N-CHANNEL 80 V (D-S) MOSFET 150

Vishay Siliconix

9,954
Datasheet TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 28.9A (Ta), 116A (Tc) 7.5V, 10V 3.4mOhm @ 15A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 3360 pF @ 40 V - 5.6W (Ta), 92.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
TK3A65DA(STA4,QM) Toshiba Semiconductor and Storage

TK3A65DA(STA4,QM)

MOSFET N-CH 650V 2.5A TO220SIS

Toshiba Semiconductor and Storage

3,536
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 2.5A (Ta) 10V 2.51Ohm @ 1.3A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
NVTYS006N06CLTWG onsemi

NVTYS006N06CLTWG

T6 60V N-CH LL IN LFPAK33

onsemi

9,817
Datasheet - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 16A (Ta), 71A (Tc) 4.5V, 10V 6.8mOhm @ 35A, 10V 2V @ 53µA 19 nC @ 10 V ±20V 1330 pF @ 25 V - 3.2W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
IAUCN10S7L180ATMA1 Infineon Technologies

IAUCN10S7L180ATMA1

IAUCN10S7L180ATMA1

Infineon Technologies

4,477
Datasheet OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 39A (Tj) 4.5V, 10V 18mOhm @ 20A, 10V 2V @ 14µA 14.3 nC @ 10 V ±16V 868 pF @ 50 V - 58W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-34
PSMD081N10LS2_L2_00601 Panjit International Inc.

PSMD081N10LS2_L2_00601

Exc FOM/100V/8.1m /TO-252AA

Panjit International Inc.

6,935
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJQ5451E-AU_R2_006A1 Panjit International Inc.

PJQ5451E-AU_R2_006A1

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,244
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TK8R2E06PL,S1X Toshiba Semiconductor and Storage

TK8R2E06PL,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

9,416
Datasheet U-MOSIX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 8.2mOhm @ 25A, 10V 2.5V @ 300µA 28 nC @ 10 V ±20V 1990 pF @ 30 V - 81W (Tc) 175°C - - Through Hole TO-220
NVMFWS2D3N04XMT1G onsemi

NVMFWS2D3N04XMT1G

40V T10M IN S08FL PACKAGE

onsemi

3,349
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 29A (Ta), 121A (Tc) 10V 2.35mOhm @ 20A, 10V 3.5V @ 60µA 22.2 nC @ 10 V ±20V 1417 pF @ 25 V - 63W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
ISZ028N03LF2SATMA1 Infineon Technologies

ISZ028N03LF2SATMA1

ISZ028N03LF2SATMA1

Infineon Technologies

2,499
Datasheet StrongIRFET™ 2 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 128A (Tc) 4.5V, 10V 2.8mOhm @ 20A, 10V 2.35V @ 30µA 19 nC @ 4.5 V ±20V 1780 pF @ 15 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSDSON-8 FL
TK5A65W,S5X Toshiba Semiconductor and Storage

TK5A65W,S5X

MOSFET N-CH 650V 5.2A TO220SIS

Toshiba Semiconductor and Storage

8,447
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 5.2A (Ta) 10V 1.2Ohm @ 2.6A, 10V 3.5V @ 170µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK3A90E,S4X Toshiba Semiconductor and Storage

TK3A90E,S4X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

8,738
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 2.5A (Ta) 10V 4.6Ohm @ 1.3A, 10V 4V @ 250µA 15 nC @ 10 V ±30V 650 pF @ 25 V - 35W (Tc) 150°C - - Through Hole TO-220SIS
TK6A45DA(STA4,Q,M) Toshiba Semiconductor and Storage

TK6A45DA(STA4,Q,M)

MOSFET N-CH 450V 5.5A TO220SIS

Toshiba Semiconductor and Storage

21
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 5.5A (Ta) 10V 1.35Ohm @ 2.8A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - - 150°C (TJ) - - Through Hole TO-220SIS
NVTYS003N04CTWG onsemi

NVTYS003N04CTWG

T6 40V N-CH SL IN LFPAK33

onsemi

8,349
Datasheet - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta), 99A (Tc) 10V 3.9mOhm @ 50A, 10V 3.5V @ 60µA 24 nC @ 10 V ±20V 1600 pF @ 25 V - 3.2W (Ta), 69W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

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Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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