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ELECTRONIC COMPONENTS

FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SQS166ELNW-T1_GE3 Vishay Siliconix

SQS166ELNW-T1_GE3

AUTOMOTIVE N-CHANNEL 60V (D-S)

Vishay Siliconix

9,015
Datasheet TrenchFET® Gen IV 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 71A (Tc) 4.5V, 10V 8.9mOhm @ 10A, 10V 2.5V @ 250µA 32 nC @ 10 V ±20V 1790 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank PowerPAK® 1212-8SLW
SQ2361CEES-T1_GE3 Vishay Siliconix

SQ2361CEES-T1_GE3

MOSFET P-CH 60V 2.8A SOT23-3

Vishay Siliconix

9,754
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 2.8A (Tc) 4.5V, 10V 170mOhm @ 2.4A, 10V 2.5V @ 250µA 15 nC @ 10 V ±20V 620 pF @ 30 V - 2W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
IRFR420PBF-BE3 Vishay Siliconix

IRFR420PBF-BE3

N-CHANNEL 500V

Vishay Siliconix

3,728
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
MCAC30P03-TP Micro Commercial Co

MCAC30P03-TP

MOSFET P-CH 30 30A DFN5060

Micro Commercial Co

3,376
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 16mOhm @ 20A, 10V 2V @ 250µA 28 nC @ 10 V ±20V 1385 pF @ 15 V - 41.7W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount DFN5060
SQ2310CES-T1_GE3 Vishay Siliconix

SQ2310CES-T1_GE3

MOSFET N-CH 20V 6A TO236

Vishay Siliconix

3,697
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 6A (Tc) 1.8V, 4.5V 30mOhm @ 5A, 4.5V 1V @ 250µA 8.5 nC @ 4.5 V ±8V 590 pF @ 10 V - 2W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SOT-23-3 (TO-236)
PJQ44611AP-AU_R2_002A1 Panjit International Inc.

PJQ44611AP-AU_R2_002A1

60V P-Channel Enhance Mode MSFT

Panjit International Inc.

6,359
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJD13N10A_L2_00001 Panjit International Inc.

PJD13N10A_L2_00001

100V N-CHANNEL MOSFET

Panjit International Inc.

2,704
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 2.9A (Ta), 13A (Tc) 4.5V, 10V 115mOhm @ 6.5A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 1413 pF @ 25 V - 2W (Ta), 41W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
PJL9433A_R2_00001 Panjit International Inc.

PJL9433A_R2_00001

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

8,444
Datasheet - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 3.2A (Ta) 4.5V, 10V 110mOhm @ 3.2A, 10V 2.5V @ 250µA 10 nC @ 10 V ±20V 785 pF @ 30 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
SQJ118EP-T1_GE3 Vishay Siliconix

SQJ118EP-T1_GE3

AUTOMOTIVE N-CHANNEL 100V (D-S)

Vishay Siliconix

8,108
Datasheet TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 10V 19.7mOhm @ 15A, 10V 3.5V @ 250µA 47 nC @ 10 V ±20V 2930 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8
IRF820ALPBF Vishay Siliconix

IRF820ALPBF

MOSFET N-CH 500V 2.5A I2PAK

Vishay Siliconix

5,210
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4.5V @ 250µA 17 nC @ 10 V ±30V 340 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole I2PAK
SIR5810DP-T1-RE3 Vishay Siliconix

SIR5810DP-T1-RE3

N-CHANNEL 80 V (D-S) MOSFET 150C

Vishay Siliconix

7,724
Datasheet TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 15.5A (Ta), 53.3A (Tc) 7.5V, 10V 10mOhm @ 10A, 10V 4V @ 250µA 18.5 nC @ 10 V ±20V 900 pF @ 40 V - 3W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SQS110ENW-T1_GE3 Vishay Siliconix

SQS110ENW-T1_GE3

AUTOMOTIVE N-CHANNEL 100V (D-S)

Vishay Siliconix

4,991
Datasheet TrenchFET® Gen IV 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 13.2mOhm @ 10A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 3449 pF @ 25 V - 119W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank PowerPAK® 1212-8SLW
PJQ44609AP-AU_R2_002A1 Panjit International Inc.

PJQ44609AP-AU_R2_002A1

60V P-Channel Enhance Mode MSFT

Panjit International Inc.

7,783
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SISS5810DN-T1-GE3 Vishay Siliconix

SISS5810DN-T1-GE3

N-CHANNEL 80 V (D-S) MOSFET 150C

Vishay Siliconix

5,943
Datasheet TrenchFET® Gen V PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 13.9A (Ta), 51A (Tc) 7.5V, 10V 10mOhm @ 10A, 10V 4V @ 250µA 18.5 nC @ 10 V ±20V 900 pF @ 40 V - 3.9W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
SIR5208DP-T1-RE3 Vishay Siliconix

SIR5208DP-T1-RE3

N-CHANNEL 20 V (D-S) MOSFET 150C

Vishay Siliconix

4,366
Datasheet TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 48A (Ta), 165A (Tc) 2.5V, 8V 1.3mOhm @ 10A, 8V 1.3V @ 250µA 68 nC @ 10 V +8V, -7V 4100 pF @ 10 V - 4.8W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIHFZ48S-GE3 Vishay Siliconix

SIHFZ48S-GE3

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix

2,002
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 3.7W (Ta), 190W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
PJQ44607AP-AU_R2_002A1 Panjit International Inc.

PJQ44607AP-AU_R2_002A1

60V P-Channel Enhance Mode MSFT

Panjit International Inc.

2,914
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SISS26LDN-T1-UE3 Vishay Siliconix

SISS26LDN-T1-UE3

N-CHANNEL 60 V (D-S) 150C MOSFET

Vishay Siliconix

6,561
Datasheet TrenchFET® Gen IV PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 23.7A (Ta), 81.2A (Tc) 4.5V, 10V 4.3mOhm @ 15A, 10V 2.5V @ 250µA 48 nC @ 10 V ±20V 1980 pF @ 30 V - 4.8W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
SIRA60DDP-T1-UE3 Vishay Siliconix

SIRA60DDP-T1-UE3

N-CHANNEL 30 V (D-S) 150C MOSFET

Vishay Siliconix

6,067
Datasheet TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 65A (Ta), 241A (Tc) 4.5V, 10V 0.9mOhm @ 20A, 10V 2.2V @ 250µA 125 nC @ 10 V +20V, -16V 7975 pF @ 15 V - 5.7W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
PJQ4441P_R2_00001 Panjit International Inc.

PJQ4441P_R2_00001

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

8,651
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 8.5A (Ta), 44A (Tc) 4.5V, 10V 17mOhm @ 10A, 10V 2.5V @ 250µA 19 nC @ 4.5 V ±20V 2030 pF @ 25 V - 2W (Ta), 59.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN3333-8
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

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Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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