FETs, MOSFETs
Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SQS166ELNW-T1_GE3AUTOMOTIVE N-CHANNEL 60V (D-S) |
9,015 |
|
Datasheet | TrenchFET® Gen IV | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 71A (Tc) | 4.5V, 10V | 8.9mOhm @ 10A, 10V | 2.5V @ 250µA | 32 nC @ 10 V | ±20V | 1790 pF @ 25 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount, Wettable Flank | PowerPAK® 1212-8SLW |
|
SQ2361CEES-T1_GE3MOSFET P-CH 60V 2.8A SOT23-3 |
9,754 |
|
Datasheet | - | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 2.8A (Tc) | 4.5V, 10V | 170mOhm @ 2.4A, 10V | 2.5V @ 250µA | 15 nC @ 10 V | ±20V | 620 pF @ 30 V | - | 2W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
|
IRFR420PBF-BE3N-CHANNEL 500V |
3,728 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.4A (Tc) | 10V | 3Ohm @ 1.4A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
MCAC30P03-TPMOSFET P-CH 30 30A DFN5060 |
3,376 |
|
Datasheet | - | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 16mOhm @ 20A, 10V | 2V @ 250µA | 28 nC @ 10 V | ±20V | 1385 pF @ 15 V | - | 41.7W (Tj) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DFN5060 |
|
SQ2310CES-T1_GE3MOSFET N-CH 20V 6A TO236 |
3,697 |
|
Datasheet | TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Tc) | 1.8V, 4.5V | 30mOhm @ 5A, 4.5V | 1V @ 250µA | 8.5 nC @ 4.5 V | ±8V | 590 pF @ 10 V | - | 2W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | SOT-23-3 (TO-236) |
|
PJQ44611AP-AU_R2_002A160V P-Channel Enhance Mode MSFT |
6,359 |
|
Datasheet | - | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
PJD13N10A_L2_00001100V N-CHANNEL MOSFET |
2,704 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 2.9A (Ta), 13A (Tc) | 4.5V, 10V | 115mOhm @ 6.5A, 10V | 2.5V @ 250µA | 20 nC @ 10 V | ±20V | 1413 pF @ 25 V | - | 2W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
PJL9433A_R2_0000160V P-CHANNEL ENHANCEMENT MODE M |
8,444 |
|
Datasheet | - | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 3.2A (Ta) | 4.5V, 10V | 110mOhm @ 3.2A, 10V | 2.5V @ 250µA | 10 nC @ 10 V | ±20V | 785 pF @ 30 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
SQJ118EP-T1_GE3AUTOMOTIVE N-CHANNEL 100V (D-S) |
8,108 |
|
Datasheet | TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 38A (Tc) | 10V | 19.7mOhm @ 15A, 10V | 3.5V @ 250µA | 47 nC @ 10 V | ±20V | 2930 pF @ 25 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
IRF820ALPBFMOSFET N-CH 500V 2.5A I2PAK |
5,210 |
|
Datasheet | - | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 17 nC @ 10 V | ±30V | 340 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
|
SIR5810DP-T1-RE3N-CHANNEL 80 V (D-S) MOSFET 150C |
7,724 |
|
Datasheet | TrenchFET® Gen V | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 15.5A (Ta), 53.3A (Tc) | 7.5V, 10V | 10mOhm @ 10A, 10V | 4V @ 250µA | 18.5 nC @ 10 V | ±20V | 900 pF @ 40 V | - | 3W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SQS110ENW-T1_GE3AUTOMOTIVE N-CHANNEL 100V (D-S) |
4,991 |
|
Datasheet | TrenchFET® Gen IV | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 57A (Tc) | 10V | 13.2mOhm @ 10A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±20V | 3449 pF @ 25 V | - | 119W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount, Wettable Flank | PowerPAK® 1212-8SLW |
|
PJQ44609AP-AU_R2_002A160V P-Channel Enhance Mode MSFT |
7,783 |
|
Datasheet | - | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SISS5810DN-T1-GE3N-CHANNEL 80 V (D-S) MOSFET 150C |
5,943 |
|
Datasheet | TrenchFET® Gen V | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 13.9A (Ta), 51A (Tc) | 7.5V, 10V | 10mOhm @ 10A, 10V | 4V @ 250µA | 18.5 nC @ 10 V | ±20V | 900 pF @ 40 V | - | 3.9W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
|
SIR5208DP-T1-RE3N-CHANNEL 20 V (D-S) MOSFET 150C |
4,366 |
|
Datasheet | TrenchFET® Gen V | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 48A (Ta), 165A (Tc) | 2.5V, 8V | 1.3mOhm @ 10A, 8V | 1.3V @ 250µA | 68 nC @ 10 V | +8V, -7V | 4100 pF @ 10 V | - | 4.8W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIHFZ48S-GE3MOSFET N-CH 60V 50A D2PAK |
2,002 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 3.7W (Ta), 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
PJQ44607AP-AU_R2_002A160V P-Channel Enhance Mode MSFT |
2,914 |
|
Datasheet | - | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SISS26LDN-T1-UE3N-CHANNEL 60 V (D-S) 150C MOSFET |
6,561 |
|
Datasheet | TrenchFET® Gen IV | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 23.7A (Ta), 81.2A (Tc) | 4.5V, 10V | 4.3mOhm @ 15A, 10V | 2.5V @ 250µA | 48 nC @ 10 V | ±20V | 1980 pF @ 30 V | - | 4.8W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
|
SIRA60DDP-T1-UE3N-CHANNEL 30 V (D-S) 150C MOSFET |
6,067 |
|
Datasheet | TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 65A (Ta), 241A (Tc) | 4.5V, 10V | 0.9mOhm @ 20A, 10V | 2.2V @ 250µA | 125 nC @ 10 V | +20V, -16V | 7975 pF @ 15 V | - | 5.7W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
PJQ4441P_R2_0000140V P-CHANNEL ENHANCEMENT MODE M |
8,651 |
|
Datasheet | - | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 8.5A (Ta), 44A (Tc) | 4.5V, 10V | 17mOhm @ 10A, 10V | 2.5V @ 250µA | 19 nC @ 4.5 V | ±20V | 2030 pF @ 25 V | - | 2W (Ta), 59.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DFN3333-8 |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
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