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ELECTRONIC COMPONENTS

FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FQPF4N90 Fairchild Semiconductor

FQPF4N90

MOSFET N-CH 900V 2.5A TO220F

Fairchild Semiconductor

744
Datasheet QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 2.5A (Tc) 10V 3.3Ohm @ 1.25A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1100 pF @ 25 V - 47W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
G2K3N10G Goford Semiconductor

G2K3N10G

N100V, 2.5A,RD<220M@10V,VTH1V~2V

Goford Semiconductor

1,126
Datasheet TrenchFET® TO-243AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 2.5A (Tc) 4.5V, 10V 220mOhm @ 2A, 10V 2V @ 250µA 13 nC @ 10 V ±20V 436 pF @ 50 V - 1.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-89
SPB10N10LG Infineon Technologies

SPB10N10LG

N-CHANNEL POWER MOSFET

Infineon Technologies

993
Datasheet SIPMOS® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 10.3A (Tc) 10V 154mOhm @ 8.1A, 10V 2V @ 21µA 22 nC @ 10 V ±20V 444 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
HUF75321S3S Harris Corporation

HUF75321S3S

MOSFET N-CH 55V 35A D2PAK

Harris Corporation

991
Datasheet UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 10V 34mOhm @ 35A, 10V 4V @ 250µA 44 nC @ 20 V ±20V 680 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
SPS02N60C3 Infineon Technologies

SPS02N60C3

MOSFET N-CH 650V 1.8A TO251-3

Infineon Technologies

3,132
Datasheet CoolMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 3.9V @ 80µA 12.5 nC @ 10 V ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-11
IRFR222 Harris Corporation

IRFR222

N-CHANNEL POWER MOSFET

Harris Corporation

944
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 3.8A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 330 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
IRFW620BTM Fairchild Semiconductor

IRFW620BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

933
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 10V 800mOhm @ 2.5A, 10V 4V @ 250µA 16 nC @ 10 V ±30V 390 pF @ 25 V - 3.13W (Ta), 47W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFU222 Harris Corporation

IRFU222

N-CHANNEL POWER MOSFET

Harris Corporation

900
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 3.8A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 330 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
IRFU421 Harris Corporation

IRFU421

N-CHANNEL POWER MOSFET

Harris Corporation

900
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 450 V 2.5A (Tc) 10V 3Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
IRFW630BTM_FP001 Fairchild Semiconductor

IRFW630BTM_FP001

9A, 200V, 0.4OHM, N-CHANNEL

Fairchild Semiconductor

800
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 250µA 29 nC @ 10 V ±30V 720 pF @ 25 V - 3.13W (Ta), 72W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFW520ATM Fairchild Semiconductor

IRFW520ATM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

774
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 10V 200mOhm @ 4.6A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRFR421 Harris Corporation

IRFR421

N-CHANNEL POWER MOSFET

Harris Corporation

1,000
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 450 V 2.5A (Tc) 10V 3Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
2SK4100LS Sanyo

2SK4100LS

N-CHANNEL SILICON MOSFET

Sanyo

958
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
FW705-TL-E Sanyo

FW705-TL-E

P-CHANNEL SILICON MOSFET

Sanyo

927
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
NDF04N60ZG-001 onsemi

NDF04N60ZG-001

MOSFET N-CH 600V 4.8A TO-220FP

onsemi

4,930
Datasheet * - Bulk Obsolete - - - - - - - - - - - - - - - - -
IRF9622156 Harris Corporation

IRF9622156

3A, 200V, 2.4OHM, P-CHANNEL, POW

Harris Corporation

800
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
FDD8880_NL Fairchild Semiconductor

FDD8880_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

777
Datasheet PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 58A (Tc) 4.5V, 10V 9mOhm @ 35A, 10V 2.5V @ 250µA 31 nC @ 10 V ±20V 1260 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
IRF614 Harris Corporation

IRF614

ADVANCED POWER MOSFET

Harris Corporation

695
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 2Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
FQPF5N30 Fairchild Semiconductor

FQPF5N30

MOSFET N-CH 300V 3.9A TO220F

Fairchild Semiconductor

1,000
Datasheet QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 300 V 3.9A (Tc) 10V 900mOhm @ 1.95A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
IPI80N04S3-06 Infineon Technologies

IPI80N04S3-06

N-CHANNEL POWER MOSFET

Infineon Technologies

1,000
Datasheet * - Bulk Obsolete - - - - - - - - - - - - - - - - -
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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