Single Diodes
Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
C4D10120E-TRDIODE SIL CARB 1.2KV 33A TO252-2 |
3,806 |
|
Datasheet | Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 33A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 1200 V | 754pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
DSDI60-18ADIODE GEN PURP 1.8KV 63A TO247AD |
2,767 |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1800 V | 63A | 4.1 V @ 70 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 2 mA @ 1800 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
IDWD30G120C5XKSA1DIODE SIL CARB 1.2KV 87A TO247-2 |
652 |
|
Datasheet | CoolSiC™+ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 87A | 1.65 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 248 µA @ 1200 V | 1980pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-2 | -55°C ~ 175°C |
|
UJ3D1725K2DIODE SIL CARB 1.7KV 25A TO247-2 |
4,349 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 25A | 1.7 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 360 µA @ 1700 V | 1500pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
IDWD40G120C5XKSA1DIODE SIL CARB 1.2KV 110A TO247 |
132 |
|
Datasheet | CoolSiC™+ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 110A | 1.65 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 332 µA @ 1200 V | 2592pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-2 | -55°C ~ 175°C |
|
|
FFSH5065B-F085DIODE SIL CARB 650V 50A TO247-2 |
331 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 50A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 2030pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
NDSH25170ADIODE SIL CARB 1.7KV 25A TO247-2 |
849 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 25A | 1.75 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1700 V | 2025pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GD25MPS17HDIODE SIL CARB 1.7KV 56A TO247-2 |
1,285 |
|
Datasheet | SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 56A | 1.8 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 1083pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
C6D10170H10A 1700V SIC, SCHOTTKY DIODE |
395 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 40A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 18 µA @ 1700 V | 1227pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
JANTXV1N5819UR-1DIODE SCHOTTKY 45V 1A DO213AB |
124 |
|
Datasheet | - | DO-213AB, MELF (Glass) | Bag | Active | Schottky | 45 V | 1A | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | Military | MIL-PRF-19500/586 | Surface Mount | DO-213AB (MELF, LL41) | -65°C ~ 125°C |
|
UJ3D1250K2DIODE SIL CARB 1.2KV 50A TO247-2 |
14,813 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 50A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | 2340pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
GC05MPS33JDIODE SIL CARB 3.3KV 5A TO263-7 |
1,114 |
|
Datasheet | SiC Schottky MPS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | SiC (Silicon Carbide) Schottky | 3300 V | 5A | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Surface Mount | TO-263-7 | 175°C |
|
C4D40120HDIODE SIL CARB 1.2KV 128A TO247 |
764 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 128A | 1.8 V @ 40 A | No Recovery Time > 500mA (Io) | - | 300 µA @ 1200 V | 2809pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
DMA150E1600NADIODE GP 1.6KV 150A SOT227B |
187 |
|
Datasheet | - | SOT-227-4, miniBLOC | Tube | Active | Standard | 1600 V | 150A | 1.15 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 200 µA @ 1600 V | 60pF @ 400V, 1MHz | - | - | Chassis Mount | SOT-227B | -40°C ~ 150°C |
|
|
1N6391DIODE SCHOTTKY 45V 25A DO203AA |
74 |
|
Datasheet | - | DO-203AA, DO-4, Stud | Bulk | Active | Schottky | 45 V | 25A | 500 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 45 V | 2000pF @ 5V, 1MHz | - | - | Stud Mount | DO-203AA (DO-4) | -55°C ~ 175°C |
|
|
JANTX1N5822USDIODE SCHOTTKY 40V 3A B SQ-MELF |
169 |
|
Datasheet | - | SQ-MELF, B | Bulk | Active | Schottky | 40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Military | MIL-PRF-19500/620 | Surface Mount | B, SQ-MELF | -65°C ~ 150°C |
|
S300YDIODE GEN PURP 1.6KV 300A DO9 |
54 |
|
Datasheet | - | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 1600 V | 300A | 1.2 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | - | - | - | Chassis, Stud Mount | DO-9 | -60°C ~ 180°C |
|
UGE1112AY4DIODE GEN PURP 8KV 4.2A UGE |
36 |
|
Datasheet | - | UGE | Box | Active | Standard | 8000 V | 4.2A | 6.25 V @ 7 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 mA @ 8000 V | - | - | - | Chassis Mount | UGE | - |
|
1N5822USDIODE SCHOTTKY 40V 3A B SQ-MELF |
207 |
|
Datasheet | - | SQ-MELF, B | Bulk | Active | Schottky | 40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 125°C |
|
MEO550-02DADIODE GEN PURP 200V 582A Y4-M6 |
143 |
|
Datasheet | - | Y4-M6 | Bulk | Active | Standard | 200 V | 582A | 1.25 V @ 520 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 mA @ 200 V | - | - | - | Chassis Mount | Y4-M6 | -40°C ~ 150°C |
Frequently Asked Questions
What are Single Diodes components used for?
Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right Single Diodes part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.
