Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
C3D06060F DIODE SIC 600V 11.5A TO220-F2 Wolfspeed, Inc.	1,323	0.00	RFQ	Datasheet	Z-Rec®	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	11.5A	1.8 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	294pF @ 0V, 1MHz	-	-	Through Hole	TO-220-F2	-55°C ~ 175°C
GD10MPS12E DIODE SIL CARB 1.2KV 29A TO252-2 GeneSiC Semiconductor	9,841	0.00	RFQ	Datasheet	SiC Schottky MPS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	29A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	5 µA @ 1200 V	367pF @ 1V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
VS-20ETF12S-M3 DIODE GEN PURP 1.2KV 20A TO263AB Vishay General Semiconductor - Diodes Division	9,217	0.00	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	1200 V	20A	1.31 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	100 µA @ 1200 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-40°C ~ 150°C
IDM05G120C5XTMA1 DIODE SIL CARB 1200V 5A TO252-2 Infineon Technologies	0	3.46	RFQ	Datasheet	CoolSiC™+	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	33 µA @ 1200 V	301pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO252-2	-55°C ~ 175°C
VS-8EWF12STR-M3 DIODE GEN PURP 1.2KV 8A D-PAK Vishay General Semiconductor - Diodes Division	5,847	0.00	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	1200 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	270 ns	100 µA @ 1200 V	-	-	-	Surface Mount	TO-252AA (DPAK)	-40°C ~ 150°C
VS-8EWF06STR-M3 DIODE GEN PURP 600V 8A D-PAK Vishay General Semiconductor - Diodes Division	1,511	0.00	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	600 V	8A	1.2 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	100 µA @ 600 V	-	-	-	Surface Mount	TO-252AA (DPAK)	-40°C ~ 150°C
VS-8EWF12S-M3 DIODE GEN PURP 1.2KV 8A TO252 Vishay General Semiconductor - Diodes Division	1,812	0.00	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	Standard	1200 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	270 ns	100 µA @ 1200 V	-	-	-	Surface Mount	TO-252AA (DPAK)	-40°C ~ 150°C
APT60D120BG DIODE GP 1.2KV 60A TO247 Microchip Technology	955	0.00	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	60A	2.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-247 [B]	-55°C ~ 175°C
APT60S20BG DIODE SCHOTTKY 200V 75A TO247 Microchip Technology	538	0.00	RFQ	Datasheet	-	TO-247-2	Tube	Active	Schottky	200 V	75A	900 mV @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	1 mA @ 200 V	-	-	-	Through Hole	TO-247 [B]	-55°C ~ 150°C
GD10MPS12A DIODE SIL CARB 1.2KV 25A TO220-2 GeneSiC Semiconductor	3,529	0.00	RFQ	Datasheet	SiC Schottky MPS™	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	25A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	5 µA @ 1200 V	367pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
STPSC10H065GY-TR DIODE SIL CARBIDE 650V 10A D2PAK STMicroelectronics	1,273	0.00	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	D2PAK	-40°C ~ 175°C
VS-20ETF06FP-M3 DIODE GP 600V 20A TO220-2FP Vishay General Semiconductor - Diodes Division	1,061	0.00	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	20A	1.67 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-220-2 Full Pack	-40°C ~ 150°C
VS-EPU6006LHN3 DIODE GEN PURP 600V 60A TO247AD Vishay General Semiconductor - Diodes Division	895	0.00	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	60A	1.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	110 ns	30 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
DSI45-16A DIODE GEN PURP 1.6KV 45A TO247AD IXYS	978	0.00	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1600 V	45A	1.28 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	20 µA @ 1600 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 175°C
1N5712-1 DIODE SCHOTTKY 20V 75MA DO35 Microchip Technology	1,793	0.00	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Schottky	20 V	75mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	2pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
IDH05G120C5XKSA1 DIODE SIL CARB 1.2KV 5A TO220-1 Infineon Technologies	899	0.00	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	33 µA @ 1200 V	301pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
VS-90APS12L-M3 DIODE GEN PURP 1.2KV 90A TO247AD Vishay General Semiconductor - Diodes Division	1,295	0.00	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1200 V	90A	1.2 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
1N5615 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	270	0.00	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	200 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 nA @ 200 V	45pF @ 12V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
STPSC10H065B-TR DIODE SIL CARBIDE 650V 10A DPAK STMicroelectronics	12,231	0.00	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-40°C ~ 175°C
1N5417 DIODE GEN PURP 200V 3A B AXIAL Microchip Technology	1,183	0.00	RFQ	Datasheet	-	Axial	Bulk	Active	Standard	200 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 200 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C

FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.