Single Diodes
Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DSEI20-12ADIODE GEN PURP 1.2KV 17A TO220AC |
846 |
|
Datasheet | - | TO-220-2 | Tube | Active | Standard | 1200 V | 17A | 2.15 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 750 µA @ 1200 V | - | - | - | Through Hole | TO-220AC | -40°C ~ 150°C |
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IDH10G65C6XKSA1DIODE SIL CARB 650V 24A TO220-2 |
869 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 24A | 1.35 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 33 µA @ 420 V | 495pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
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IDW75D65D1XKSA1DIODE GEN PURP 650V 150A TO247-3 |
2,129 |
|
Datasheet | - | TO-247-3 | Tube | Active | Standard | 650 V | 150A | 1.7 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 108 ns | 40 µA @ 650 V | - | - | - | Through Hole | PG-TO247-3 | -40°C ~ 175°C |
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JANTX1N5615DIODE GEN PURP 200V 1A A-PAK |
2,371 |
|
Datasheet | - | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 200 V | 45pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
|
C3D10060ADIODE SIL CARB 600V 30A TO220-2 |
1,991 |
|
Datasheet | Z-Rec® | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 30A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 480pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
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C3D10060GDIODE SIL CARB 600V 29A TO263-2 |
1,068 |
|
Datasheet | Z-Rec® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 29A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 480pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
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IDM10G120C5XTMA1DIODE SIL CARB 1.2KV 38A TO252-2 |
4,234 |
|
Datasheet | CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 38A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 62 µA @ 12 V | 29pF @ 800V, 1MHz | - | - | Surface Mount | PG-TO252-2 | -55°C ~ 150°C |
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GD05MPS17J-TRDIODE SIL CARB 1700V 15A TO263-7 |
0 |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1700 V | 15A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 361pF @ 1V, 1MHz | - | - | Surface Mount | TO-263-7 | -55°C ~ 175°C |
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GD05MPS17HDIODE SIL CARB 1.7KV 15A TO247-2 |
993 |
|
Datasheet | SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 15A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 361pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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VS-90EPS12L-M3DIODE GEN PURP 1.2KV 90A TO247AD |
862 |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1200 V | 90A | 1.2 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
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RURG5060-F085DIODE GEN PURP 600V 50A TO247-2 |
387 |
|
Datasheet | - | TO-247-2 | Tube | Active | Avalanche | 600 V | 50A | 1.6 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 250 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
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1N5552DIODE GEN PURP 600V 3A AXIAL |
911 |
|
Datasheet | - | B, Axial | Bulk | Active | Standard | 600 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
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C4D05120EDIODE SIL CARB 1.2KV 19A TO252-2 |
3,241 |
|
Datasheet | Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 19A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 1200 V | 390pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
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C4D05120ADIODE SIL CARB 1200V 19A TO220 |
0 |
|
Datasheet | Z-Rec® | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 19A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 1200 V | 390pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
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APT100S20BGDIODE SCHOTTKY 200V 120A TO247 |
3,777 |
|
Datasheet | - | TO-247-2 | Tube | Active | Schottky | 200 V | 120A | 950 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 70 ns | 2 mA @ 200 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 150°C |
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DSEP30-12ADIODE GEN PURP 1.2KV 30A TO247AD |
5,978 |
|
Datasheet | HiPerFRED™ | TO-247-2 | Tube | Active | Standard | 1200 V | 30A | 2.74 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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VS-90EPS16L-M3DIODE GEN PURP 1.6KV 90A TO247AD |
435 |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1600 V | 90A | 1.21 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1600 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
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1N5712DIODE SCHOTTKY 20V 75MA DO35 |
529 |
|
Datasheet | - | DO-204AH, DO-35, Axial | Bulk | Active | Schottky | 20 V | 75mA | 1 V @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | 150 nA @ 16 V | 2pF @ 0V, 1MHz | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
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IDH10G120C5XKSA1DIODE SIL CARB 1.2KV 10A TO220-1 |
1,175 |
|
Datasheet | CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 62 µA @ 1200 V | 525pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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1N5806USDIODE GEN PURP 150V 1A D-5A |
72,209 |
|
Datasheet | - | SQ-MELF, A | Bulk | Active | Standard | 150 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
Frequently Asked Questions
What are Single Diodes components used for?
Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right Single Diodes part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.