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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N3889R GeneSiC Semiconductor

1N3889R

DIODE GEN PURP REV 50V 12A DO4

GeneSiC Semiconductor

150
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 50 V 12A 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
SCS210KGC17 Rohm Semiconductor

SCS210KGC17

DIODE SIC 1.2KV 10A TO220ACFP

Rohm Semiconductor

397
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 550pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
FFSP4065BDN-F085 onsemi

FFSP4065BDN-F085

DIODE SIL CARB 650V 20A TO220-3

onsemi

756
Datasheet - TO-220-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 866pF @ 1V, 100kHz Automotive AEC-Q101 Through Hole TO-220-3 -55°C ~ 175°C
C4D10120H Wolfspeed, Inc.

C4D10120H

DIODE SIL CARB 1.2KV 31.5A TO247

Wolfspeed, Inc.

1,226
Datasheet Z-Rec® TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 31.5A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 1200 V 754pF @ 0V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
SCS220AEGC11 Rohm Semiconductor

SCS220AEGC11

DIODE SIL CARBIDE 650V 20A TO247

Rohm Semiconductor

345
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.55 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 600 V 730pF @ 1V, 1MHz - - Through Hole TO-247 175°C
FFSH20120A-F085 onsemi

FFSH20120A-F085

DIODE SIL CARB 1.2KV 30A TO247-2

onsemi

398
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 30A - No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1220pF @ 1V, 100KHz Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
S3D35065D1 SMC Diode Solutions

S3D35065D1

DIODE SIL CARB 650V 35A TO247AD

SMC Diode Solutions

585
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 35A 1.7 V @ 35 A No Recovery Time > 500mA (Io) 0 ns 45 µA @ 650 V 2000pF @ 0V, 1MHz - - Through Hole TO-247AD -55°C ~ 175°C
DHG30IM600PC-TUB IXYS

DHG30IM600PC-TUB

DIODE GEN PURP 600V 30A TO263

IXYS

1,361
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 600 V 30A 2.26 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 50 µA @ 600 V 16pF @ 400V, 1MHz - - Surface Mount TO-263 (D2PAK) -55°C ~ 150°C
VS-3C20ET07S2L-M3 Vishay General Semiconductor - Diodes Division

VS-3C20ET07S2L-M3

650 V POWER SIC GEN 3 MERGED PIN

Vishay General Semiconductor - Diodes Division

565
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 845pF @ 1V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
SCS215AJHRTLL Rohm Semiconductor

SCS215AJHRTLL

DIODE SIL CARB 650V 15A TO263AB

Rohm Semiconductor

2,008
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 15A 1.55 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 600 V 550pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount TO-263AB 175°C (Max)
MSC020SDA120K Microchip Technology

MSC020SDA120K

DIODE SIL CARB 1.2KV 49A TO220-2

Microchip Technology

105
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 49A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1130pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-80APF10-M3 Vishay General Semiconductor - Diodes Division

VS-80APF10-M3

DIODE GEN PURP 1KV 80A TO247AC

Vishay General Semiconductor - Diodes Division

475
Datasheet - TO-247-3 Tube Active Standard 1000 V 80A 1.35 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) 480 ns 100 µA @ 1000 V - - - Through Hole TO-247AC -40°C ~ 150°C
DHG30I600HA IXYS

DHG30I600HA

DIODE GEN PURP 600V 30A TO247

IXYS

296
Datasheet - TO-247-2 Tube Active Standard 600 V 30A 2.36 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 50 µA @ 600 V - - - Through Hole TO-247 -55°C ~ 150°C
FFSH20120ADN-F085 onsemi

FFSH20120ADN-F085

DIODE SIL CARB 1.2KV 15A TO247-3

onsemi

304
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 1200 V 15A - No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 612pF @ 1V, 100kHz Automotive AEC-Q101 Through Hole TO-247-3 -55°C ~ 175°C
FFSH4065BDN-F085 onsemi

FFSH4065BDN-F085

DIODE SIL CARB 650V 20A TO247-3

onsemi

140
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 866pF @ 1V, 100kHz Automotive AEC-Q101 Through Hole TO-247-3 -55°C ~ 175°C
LSIC2SD065D20A Littelfuse Inc.

LSIC2SD065D20A

DIODE SIL CARB 650V 20A TO220AC

Littelfuse Inc.

742
Datasheet Gen2 TO-220-2 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.5 V @ 45 A No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-220AC -
S5D40120D SMC Diode Solutions

S5D40120D

1200V, 40A, TO-247AD, SIC SCHOTT

SMC Diode Solutions

1,800
Datasheet - TO-247-3 Tube Active - - - - - - - - - - Through Hole TO-247AD -
SCS220AJHRTLL Rohm Semiconductor

SCS220AJHRTLL

DIODE SIL CARB 650V 20A TO263AB

Rohm Semiconductor

2,697
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.55 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 600 V 730pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount TO-263AB 175°C (Max)
C4D15120H Wolfspeed, Inc.

C4D15120H

DIODE SIL CARB 1.2KV 39A TO247-2

Wolfspeed, Inc.

420
Datasheet Z-Rec® TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 39A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1200pF @ 0V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
FFSB20120A-F085 onsemi

FFSB20120A-F085

DIODE SIL CARB 1.2KV 32A D2PAK

onsemi

2,137
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 32A 1.75 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1220pF @ 1V, 100KHz Automotive AEC-Q101 Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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