Single Diodes
Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N3889RDIODE GEN PURP REV 50V 12A DO4 |
150 |
|
Datasheet | - | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 50 V | 12A | 1.4 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 25 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 150°C |
|
SCS210KGC17DIODE SIC 1.2KV 10A TO220ACFP |
397 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 550pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
|
FFSP4065BDN-F085DIODE SIL CARB 650V 20A TO220-3 |
756 |
|
Datasheet | - | TO-220-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-220-3 | -55°C ~ 175°C |
|
C4D10120HDIODE SIL CARB 1.2KV 31.5A TO247 |
1,226 |
|
Datasheet | Z-Rec® | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 31.5A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 1200 V | 754pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
SCS220AEGC11DIODE SIL CARBIDE 650V 20A TO247 |
345 |
|
Datasheet | - | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | 175°C |
|
FFSH20120A-F085DIODE SIL CARB 1.2KV 30A TO247-2 |
398 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1220pF @ 1V, 100KHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
S3D35065D1DIODE SIL CARB 650V 35A TO247AD |
585 |
|
Datasheet | - | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 35A | 1.7 V @ 35 A | No Recovery Time > 500mA (Io) | 0 ns | 45 µA @ 650 V | 2000pF @ 0V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
DHG30IM600PC-TUBDIODE GEN PURP 600V 30A TO263 |
1,361 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 600 V | 30A | 2.26 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 50 µA @ 600 V | 16pF @ 400V, 1MHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 150°C |
|
VS-3C20ET07S2L-M3650 V POWER SIC GEN 3 MERGED PIN |
565 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 845pF @ 1V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
|
SCS215AJHRTLLDIODE SIL CARB 650V 15A TO263AB |
2,008 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.55 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 550pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263AB | 175°C (Max) |
|
MSC020SDA120KDIODE SIL CARB 1.2KV 49A TO220-2 |
105 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 49A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1130pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
VS-80APF10-M3DIODE GEN PURP 1KV 80A TO247AC |
475 |
|
Datasheet | - | TO-247-3 | Tube | Active | Standard | 1000 V | 80A | 1.35 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 480 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-247AC | -40°C ~ 150°C |
|
DHG30I600HADIODE GEN PURP 600V 30A TO247 |
296 |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 600 V | 30A | 2.36 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 50 µA @ 600 V | - | - | - | Through Hole | TO-247 | -55°C ~ 150°C |
|
FFSH20120ADN-F085DIODE SIL CARB 1.2KV 15A TO247-3 |
304 |
|
Datasheet | - | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 612pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
FFSH4065BDN-F085DIODE SIL CARB 650V 20A TO247-3 |
140 |
|
Datasheet | - | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
LSIC2SD065D20ADIODE SIL CARB 650V 20A TO220AC |
742 |
|
Datasheet | Gen2 | TO-220-2 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.5 V @ 45 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-220AC | - |
|
S5D40120D1200V, 40A, TO-247AD, SIC SCHOTT |
1,800 |
|
Datasheet | - | TO-247-3 | Tube | Active | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247AD | - |
|
SCS220AJHRTLLDIODE SIL CARB 650V 20A TO263AB |
2,697 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263AB | 175°C (Max) |
|
C4D15120HDIODE SIL CARB 1.2KV 39A TO247-2 |
420 |
|
Datasheet | Z-Rec® | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 39A | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1200pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
FFSB20120A-F085DIODE SIL CARB 1.2KV 32A D2PAK |
2,137 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 32A | 1.75 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1220pF @ 1V, 100KHz | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
Frequently Asked Questions
What are Single Diodes components used for?
Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right Single Diodes part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.