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Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
C3D12065A Wolfspeed, Inc.

C3D12065A

DIODE SIL CARB 650V 35A TO220-2

Wolfspeed, Inc.

1,747
Datasheet Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 35A 1.8 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 74 µA @ 650 V 641.5pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
IDW10G65C5XKSA1 Infineon Technologies

IDW10G65C5XKSA1

DIODE SIL CARB 650V 10A TO247-3

Infineon Technologies

232
Datasheet CoolSiC™+ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole PG-TO247-3 -55°C ~ 175°C
IDD08SG60CXTMA2 Infineon Technologies

IDD08SG60CXTMA2

DIODE SIL CARB 600V 8A TO252-3

Infineon Technologies

178
Datasheet CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 600 V 8A 2.1 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 600 V 240pF @ 1V, 1MHz - - Surface Mount PG-TO252-3 -55°C ~ 175°C
VS-3C08ET07S2L-M3 Vishay General Semiconductor - Diodes Division

VS-3C08ET07S2L-M3

650 V POWER SIC GEN 3 MERGED PIN

Vishay General Semiconductor - Diodes Division

2,373
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.5 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 45 µA @ 650 V 340pF @ 1V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
FFSB0865B-F085 onsemi

FFSB0865B-F085

DIODE SIL CARB 650V 10.1A D2PAK

onsemi

550
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10.1A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 336pF @ 1V, 100kHz - - Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
VS-90APS16L-M3 Vishay General Semiconductor - Diodes Division

VS-90APS16L-M3

DIODE GEN PURP 1.6KV 90A TO247AD

Vishay General Semiconductor - Diodes Division

492
Datasheet - TO-247-3 Tube Active Standard 1600 V 90A 1.21 V @ 90 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1600 V - - - Through Hole TO-247AD -40°C ~ 150°C
FFSP1665A onsemi

FFSP1665A

DIODE SIL CARB 650V 16A TO220-2

onsemi

1,882
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.75 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 887pF @ 1V, 100kHz - - Through Hole TO-220-2 -55°C ~ 175°C
STPSC12065G2Y-TR STMicroelectronics

STPSC12065G2Y-TR

DIODE SIL CARB 650V 12A D2PAK HV

STMicroelectronics

859
Datasheet ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 12A 1.45 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 650 V 750pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount D2PAK HV -40°C ~ 175°C
C3D10065A Wolfspeed, Inc.

C3D10065A

DIODE SIL CARB 650V 30A TO220-2

Wolfspeed, Inc.

938
Datasheet Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 30A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 480pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
FFSM1065A onsemi

FFSM1065A

DIODE SIL CARBIDE 650V 11A 4PQFN

onsemi

2,995
Datasheet - 4-PowerTSFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 11A 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 575pF @ 1V, 100kHz - - Surface Mount 4-PQFN (8x8) -55°C ~ 175°C
STPSC12H065D STMicroelectronics

STPSC12H065D

DIODE SIL CARB 650V 12A TO220AC

STMicroelectronics

966
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.75 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 120 µA @ 650 V 600pF @ 0V, 1MHz - - Through Hole TO-220AC -40°C ~ 175°C
FFSH1265BDN-F085 onsemi

FFSH1265BDN-F085

DIODE SIL CARB 650V 7.2A TO247-3

onsemi

756
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 7.2A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 259pF @ 1V, 100kHz Automotive AEC-Q101 Through Hole TO-247-3 -55°C ~ 175°C
SCS308AJTLL Rohm Semiconductor

SCS308AJTLL

DIODE SIL CARBIDE 650V 8A LPTL

Rohm Semiconductor

915
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.5 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 400pF @ 1V, 1MHz - - Surface Mount LPTL 175°C (Max)
SIC0860PL8-TP Micro Commercial Co

SIC0860PL8-TP

DIODE SIL CARB 650V 8A DFN8080A

Micro Commercial Co

6,000
Datasheet - 4-PowerVSFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.6 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 36 µA @ 650 V 346pF @ 0V, 1MHz - - Surface Mount DFN8080A -55°C ~ 175°C
VS-3C16ET07T-M3 Vishay General Semiconductor - Diodes Division

VS-3C16ET07T-M3

650 V POWER SIC GEN 3 MERGED PIN

Vishay General Semiconductor - Diodes Division

3,020
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.5 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 85 µA @ 650 V 700pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
VS-EPH3006-N3 Vishay General Semiconductor - Diodes Division

VS-EPH3006-N3

DIODE GP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

422
Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 2.65 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 26 ns 30 µA @ 600 V - - - Through Hole TO-247AC Modified -65°C ~ 175°C
VS-APU3006-N3 Vishay General Semiconductor - Diodes Division

VS-APU3006-N3

DIODE GEN PURP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

440
Datasheet FRED Pt® TO-247-3 Tube Active Standard 600 V 30A 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 30 µA @ 600 V - - - Through Hole TO-247AC -65°C ~ 175°C
SICB1060P-TP Micro Commercial Co

SICB1060P-TP

DIODE SIL CARBIDE 650V 10A D2PAK

Micro Commercial Co

780
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 44 µA @ 650 V 36pF @ 400V, 1MHz - - Surface Mount D2PAK -55°C ~ 175°C
S3D30065A SMC Diode Solutions

S3D30065A

DIODE SIL CARB 650V 84A TO220AC

SMC Diode Solutions

996
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 84A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 140 µA @ 650 V 2307pF @ 0V, 100MHz Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 175°C
VS-E5PX7512L-N3 Vishay General Semiconductor - Diodes Division

VS-E5PX7512L-N3

DIODE GEN PURP 1.2KV 75A TO247AD

Vishay General Semiconductor - Diodes Division

500
Datasheet FRED Pt® Gen 5 TO-247-2 Tube Active Standard 1200 V 75A 3.3 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 140 ns 50 µA @ 1200 V - - - Through Hole TO-247AD -55°C ~ 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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