Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
S4D10120A DIODE SIL CARB 1.2KV 10A TO220AC SMC Diode Solutions	260	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	772pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC (TO-220-2)	-55°C ~ 175°C
VS-3C10ET07S2L-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	2,345	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	55 µA @ 650 V	445pF @ 1V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
FFSP08120A DIODE SIL CARB 1.2KV 8A TO220-2L onsemi	365	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	8A	1.75 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 1200 V	538pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
GP3D030A065B DIODE SIL CARB 650V 30A TO247-2 SemiQ	142	RFQ	Datasheet	Amp+™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.65 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	75 µA @ 650 V	1247pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
UJ3D06530TS DIODE SIL CARB 650V 30A TO220-2 Qorvo	7,715	RFQ	Datasheet	Gen-III	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	370 µA @ 650 V	990pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
STTH30RQ06L2-TR DIODE GEN PURP 600V 30A HU3PAK STMicroelectronics	600	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	Standard	600 V	30A	2.95 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	40 µA @ 600 V	-	-	-	Surface Mount	HU3PAK	175°C
SCS220AGC17 DIODE SIC 650V 20A TO220ACFP Rohm Semiconductor	706	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 600 V	730pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
DSEI36-06AS-TRL DIODE GEN PURP 600V 37A TO263AA IXYS	2,069	RFQ	Datasheet	FRED	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	37A	1.6 V @ 37 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 µA @ 600 V	-	-	-	Surface Mount	TO-263AA	-40°C ~ 150°C
1N3595UR-1 DIODE GP 125V 150MA DO213AA Microchip Technology	624	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Standard	125 V	150mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	1 nA @ 125 V	-	-	-	Surface Mount	DO-213AA	-65°C ~ 175°C
IDH10SG60CXKSA2 DIODE SIL CARB 600V 10A TO220-1 Infineon Technologies	330	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	10A	2.1 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 600 V	290pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
SIC1060PL8-TP DIODE SIL CARB 650V 10A DFN8080A Micro Commercial Co	6,000	RFQ	Datasheet	-	4-PowerVSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	44 µA @ 650 V	452pF @ 0V, 1MHz	-	-	Surface Mount	DFN8080A	-55°C ~ 175°C
AIDK08S65C5ATMA1 DISCRETE DIODES Infineon Technologies	188	RFQ	Datasheet	CoolSiC™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	248pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	PG-TO263-2	-40°C ~ 175°C
SCS206AJHRTLL DIODE SIL CARB 650V 6A TO263AB Rohm Semiconductor	2,756	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 600 V	219pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263AB	175°C (Max)
S3D20065A DIODE SIL CARB 650V 20A TO220AC SMC Diode Solutions	289	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	1200pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC (TO-220-2)	-55°C ~ 175°C
SCS310AJTLL DIODE SIL CARBIDE 650V 10A LPTL Rohm Semiconductor	518	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Surface Mount	LPTL	175°C (Max)
APT15DQ120BHBG DIODE GEN PURP 1.2KV 15A TO247-3 Microchip Technology	101	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1200 V	15A	3.5 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	240 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
VS-40EPF06-M3 DIODE GP 600V 40A TO247AC Vishay General Semiconductor - Diodes Division	478	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	40A	1.25 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
STTH6010WY DIODE GEN PURP 1KV 60A DO247 STMicroelectronics	548	RFQ	Datasheet	Q	DO-247-2 (Straight Leads)	Tube	Active	Standard	1000 V	60A	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	20 µA @ 1000 V	-	Automotive	-	Through Hole	DO-247	-40°C ~ 175°C
C3D08065A DIODE SIL CARB 650V 24A TO220-2 Wolfspeed, Inc.	718	RFQ	Datasheet	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	24A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	441pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
FFSP2065BDN-F085 DIODE SIL CARB 650V 10A TO220-3 onsemi	180	RFQ	Datasheet	-	TO-220-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-220-3	-55°C ~ 175°C

FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.