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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
FFSD08120A onsemi

FFSD08120A

DIODE SIC 1.2KV 22.5A TO252AA

onsemi

2,010
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 22.5A 1.75 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 538pF @ 1V, 100kHz - - Surface Mount TO-252AA -55°C ~ 175°C
STPSC10H12G2Y-TR STMicroelectronics

STPSC10H12G2Y-TR

DIODE SIL CARB 1.2KV 10A D2PAK

STMicroelectronics

498
Datasheet ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1200 V 725pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount D2PAK HV -40°C ~ 175°C
1N5802 Microchip Technology

1N5802

DIODE GEN PURP 50V 1A AXIAL

Microchip Technology

298
Datasheet - A, Axial Bulk Active Standard 50 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
VS-16F120 Vishay General Semiconductor - Diodes Division

VS-16F120

DIODE GEN PURP 1.2KV 16A DO203AA

Vishay General Semiconductor - Diodes Division

104
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 1200 V 16A 1.23 V @ 50 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 1200 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
1N5807 Microchip Technology

1N5807

DIODE GEN PURP 50V 3A AXIAL

Microchip Technology

198
Datasheet - B, Axial Bulk Active Standard 50 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz - - Through Hole B, Axial -65°C ~ 175°C
JANTX1N5417 Microchip Technology

JANTX1N5417

DIODE GEN PURP 200V 3A AXIAL

Microchip Technology

204
Datasheet - B, Axial Bulk Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
DH20-18A IXYS

DH20-18A

DIODE GEN PURP 1.8KV 20A TO247

IXYS

129
Datasheet - TO-247-2 Tube Active Standard 1800 V 20A 2.24 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 50 µA @ 1800 V - - - Through Hole TO-247 -55°C ~ 150°C
1N5615US Microchip Technology

1N5615US

DIODE GEN PURP 200V 1A D-5A

Microchip Technology

630
Datasheet - SQ-MELF, A Bulk Active Standard 200 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 200 V 45pF @ 12V, 1MHz - - Surface Mount D-5A -65°C ~ 175°C
VS-60EPU02-N3 Vishay General Semiconductor - Diodes Division

VS-60EPU02-N3

DIODE GP 200V 60A TO247AC

Vishay General Semiconductor - Diodes Division

554
Datasheet FRED Pt® TO-247-2 Tube Active Standard 200 V 60A 1.08 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 28 ns 50 µA @ 200 V - - - Through Hole TO-247AC Modified -55°C ~ 175°C
JANTX1N6642 Microchip Technology

JANTX1N6642

DIODE GEN PURP 75V 300MA DO35

Microchip Technology

6,996
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N3881 GeneSiC Semiconductor

1N3881

DIODE GEN PURP 200V 6A DO4

GeneSiC Semiconductor

414
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 200 V 6A 1.4 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 15 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
GD20MPS12H GeneSiC Semiconductor

GD20MPS12H

DIODE SIL CARB 1.2KV 39A TO247-2

GeneSiC Semiconductor

2,961
Datasheet SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 39A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 737pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
S4D15120H SMC Diode Solutions

S4D15120H

DIODE SIL CARB 1.2KV 15A TO247AC

SMC Diode Solutions

634
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 35 µA @ 1200 V 1200pF @ 0V, 1MHz - - Through Hole TO-247AC -55°C ~ 175°C
STPSC20065WY STMicroelectronics

STPSC20065WY

DIODE SIL CARBIDE 650V 20A DO247

STMicroelectronics

258
Datasheet ECOPACK®2 DO-247-2 (Straight Leads) Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.45 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 650 V 1250pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole DO-247 -40°C ~ 175°C
FFSB3065B onsemi

FFSB3065B

DIODE SIL CARB 650V 73A D2PAK-2

onsemi

3,732
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 73A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 1280pF @ 1V, 100kHz - - Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
IDDD20G65C6XTMA1 Infineon Technologies

IDDD20G65C6XTMA1

DIODE SIL CARB 650V 51A HDSOP-10

Infineon Technologies

606
Datasheet CoolSiC™+ 10-PowerSOP Module Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 51A - No Recovery Time > 500mA (Io) 0 ns 67 µA @ 420 V 970pF @ 1V, 1MHz - - Surface Mount PG-HDSOP-10-1 -55°C ~ 175°C
VS-12FR120 Vishay General Semiconductor - Diodes Division

VS-12FR120

DIODE GEN PURP 1.2KV 12A DO203AA

Vishay General Semiconductor - Diodes Division

475
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 1200 V 12A 1.26 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 1200 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
VS-40HF40 Vishay General Semiconductor - Diodes Division

VS-40HF40

DIODE GEN PURP 400V 40A DO203AB

Vishay General Semiconductor - Diodes Division

221
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 400 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 400 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
JANTX1N5554 Microchip Technology

JANTX1N5554

DIODE GEN PURP 1KV 5A AXIAL

Microchip Technology

118
Datasheet - B, Axial Bulk Active Standard 1000 V 5A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 2 µA @ 1000 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
DSEI60-12A IXYS

DSEI60-12A

DIODE GEN PURP 1.2KV 52A TO247AD

IXYS

561
Datasheet - TO-247-2 Tube Active Standard 1200 V 52A 2.55 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 2.2 mA @ 1200 V - - - Through Hole TO-247AD -40°C ~ 150°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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