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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JAN1N5617 Microchip Technology

JAN1N5617

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

177
Datasheet - A, Axial Bulk Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V - Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
DSEP30-06A IXYS

DSEP30-06A

DIODE GEN PURP 600V 30A TO247AD

IXYS

990
Datasheet HiPerFRED™ TO-247-2 Tube Active Standard 600 V 30A 1.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 250 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
IDM08G120C5XTMA1 Infineon Technologies

IDM08G120C5XTMA1

DIODE SIL CARB 1.2KV 8A TO252-2

Infineon Technologies

1,688
Datasheet CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 8A 1.95 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 365pF @ 1V, 1MHz - - Surface Mount PG-TO252-2 -55°C ~ 175°C
DNA30E2200PA IXYS

DNA30E2200PA

DIODE GEN PURP 2.2KV 30A TO220AC

IXYS

219
Datasheet - TO-220-2 Tube Active Standard 2200 V 30A 1.26 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
1N5620 Microchip Technology

1N5620

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology

300
Datasheet - A, Axial Bulk Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - - - Through Hole A, Axial -65°C ~ 200°C
STPSC10H065DI STMicroelectronics

STPSC10H065DI

DIODE SIC 650V 10A TO220AC INS

STMicroelectronics

999
Datasheet - TO-220-2 Insulated, TO-220AC Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.75 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V - - - Through Hole TO-220AC ins -40°C ~ 175°C
IDW100E60FKSA1 Infineon Technologies

IDW100E60FKSA1

DIODE GP 600V 150A TO247-3-1

Infineon Technologies

388
Datasheet - TO-247-3 Tube Active Standard 600 V 150A 2 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 40 µA @ 600 V - - - Through Hole PG-TO247-3-1 -55°C ~ 175°C
C3D06065I Wolfspeed, Inc.

C3D06065I

DIODE SIL CARB 650V 13A TO220-2

Wolfspeed, Inc.

970
Datasheet Z-Rec® TO-220-2 Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 13A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 295pF @ 0V, 1MHz - - Through Hole TO-220-2 Isolated Tab -55°C ~ 175°C
C3D08060A Wolfspeed, Inc.

C3D08060A

DIODE SIL CARB 600V 24A TO220-2

Wolfspeed, Inc.

357
Datasheet Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 24A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 441pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
1N3611 Microchip Technology

1N3611

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

341
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 200 V - - - Through Hole A, Axial -65°C ~ 175°C
VS-30EPH06-N3 Vishay General Semiconductor - Diodes Division

VS-30EPH06-N3

DIODE GP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

5,744
Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 2.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 31 ns 50 µA @ 600 V - - - Through Hole TO-247AC Modified -65°C ~ 175°C
STPSC12065DY STMicroelectronics

STPSC12065DY

DIODE SIL CARB 650V 12A TO220AC

STMicroelectronics

7,548
Datasheet ECOPACK®2 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.45 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 750pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 175°C
ISL9R3060G2-F085 onsemi

ISL9R3060G2-F085

DIODE GEN PURP 600V 30A TO247-2

onsemi

418
Datasheet Stealth™ TO-247-2 Tube Active Avalanche 600 V 30A 2.4 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 100 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
UJ3D1210TS Qorvo

UJ3D1210TS

DIODE SIL CARB 1.2KV 10A TO220-2

Qorvo

8,990
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 1200 V 510pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
DLA40IM800PC-TRL IXYS

DLA40IM800PC-TRL

DIODE GEN PURP 800V 40A TO263AA

IXYS

1,266
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 800 V 40A 1.3 V @ 40 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V 10pF @ 400V, 1MHz - - Surface Mount TO-263AA -55°C ~ 175°C
IDK08G120C5XTMA1 Infineon Technologies

IDK08G120C5XTMA1

DIODE SIC 1.2KV 22.8A TO263-1

Infineon Technologies

373
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 22.8A 1.95 V @ 8 A No Recovery Time > 500mA (Io) - 40 µA @ 1200 V 365pF @ 1V, 1MHz - - Surface Mount PG-TO263-2-1 -55°C ~ 175°C
DSI30-16AS-TRL IXYS

DSI30-16AS-TRL

DIODE GEN PURP 1.6KV 30A TO263AA

IXYS

2,638
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1600 V 30A 1.29 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 1600 V 10pF @ 400V, 1MHz - - Surface Mount TO-263AA -40°C ~ 175°C
DSEP29-12A IXYS

DSEP29-12A

DIODE GEN PURP 1.2KV 30A TO220AC

IXYS

774
Datasheet HiPerFRED™ TO-220-2 Tube Active Standard 1200 V 30A 2.75 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 250 µA @ 1200 V - - - Through Hole TO-220AC -55°C ~ 175°C
JANTX1N3611 Microchip Technology

JANTX1N3611

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

356
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 200 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
DSEI30-10A IXYS

DSEI30-10A

DIODE GEN PURP 1KV 30A TO247AD

IXYS

445
Datasheet - TO-247-2 Tube Active Standard 1000 V 30A 2.4 V @ 36 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 750 µA @ 1000 V - - - Through Hole TO-247AD -40°C ~ 150°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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