Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
STTH30RQ06L2Y-TR DIODE GEN PURP 600V 30A HU3PAK STMicroelectronics	823	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	Standard	600 V	30A	2.95 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	40 µA @ 600 V	-	Automotive	AEC-Q101	Surface Mount	HU3PAK	-40°C ~ 175°C
IDK12G65C5XTMA2 DIODE SIL CARB 650V 12A TO263-2 Infineon Technologies	1,257	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.8 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	-	360pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2	-55°C ~ 175°C
1N5614US DIODE GEN PURP 200V 1A D-5A Microchip Technology	250	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	200 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 200 V	-	-	-	Surface Mount	D-5A	-65°C ~ 200°C
IDL12G65C5XUMA2 DIODE SIL CARB 650V 12A VSON-4 Infineon Technologies	6,146	RFQ	Datasheet	CoolSiC™+	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	190 µA @ 650 V	360pF @ 1V, 1MHz	-	-	Surface Mount	PG-VSON-4	-55°C ~ 150°C
DSEI36-06AS-TUB DIODE GEN PURP 600V 37A TO263AA IXYS	1,403	RFQ	Datasheet	FRED	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	600 V	37A	1.6 V @ 37 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 µA @ 600 V	-	-	-	Surface Mount	TO-263AA	-40°C ~ 150°C
C4D05120E-TR DIODE SIL CARB 1.2KV 19A TO252-2 Wolfspeed, Inc.	1,520	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	19A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 1200 V	390pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
1N5550 DIODE GEN PURP 200V 3A AXIAL Microchip Technology	262	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	200 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 200 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
STTH75S12W DIODE GEN PURP 1.2KV 75A DO247 STMicroelectronics	295	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	75A	3.2 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	50 µA @ 1200 V	-	-	-	Through Hole	DO-247	-40°C ~ 175°C
VS-40EPS12-M3 DIODE GP 1.2KV 40A TO247AC Vishay General Semiconductor - Diodes Division	343	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	40A	1 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
FFSP2065A DIODE SIL CARB 650V 25A TO220-2 onsemi	3,918	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	25A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	1085pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
DNA30E2200PZ-TRL DIODE GEN PURP 2.2KV 30A TO263 IXYS	3,257	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	2200 V	30A	1.26 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 2200 V	7pF @ 700V, 1MHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 150°C
C3D08060G DIODE SIL CARB 600V 24A TO263-2 Wolfspeed, Inc.	205	RFQ	Datasheet	Z-Rec®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	24A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	441pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
VS-80APS12-M3 DIODE GEN PURP 1.2KV 80A TO247AC Vishay General Semiconductor - Diodes Division	3,977	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1200 V	80A	1.17 V @ 80 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
IDWD150E65E7XKSA1 DIODE GEN PURP 650V 200A TO247-2 Infineon Technologies	328	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	200A	2.1 V @ 150 A	Fast Recovery =< 500ns, > 5A (Io)	97 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
DPG60IM300PC-TRL DIODE GEN PURP 300V 60A TO263AA IXYS	1,956	RFQ	Datasheet	HiPerFRED²™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	300 V	60A	1.43 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 300 V	-	-	-	Surface Mount	TO-263AA	-55°C ~ 175°C
FFSM2065B DIODE SIL CARB 650V 23.4A 4PQFN onsemi	2,096	RFQ	Datasheet	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	23.4A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
STPSC10H12G2-TR DIODE SIL CARB 1.2KV 10A D2PAK STMicroelectronics	570	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	725pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK HV	-40°C ~ 175°C
VS-60EPS08-M3 DIODE GP 800V 60A TO247AC Vishay General Semiconductor - Diodes Division	2,185	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	800 V	60A	1.09 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 800 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
VS-60EPS12-M3 DIODE GP 1.2KV 60A TO247AC Vishay General Semiconductor - Diodes Division	408	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	60A	1.09 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
FFSB2065BDN-F085 DIODE SIC 650V 23.6A D2PAK-3 onsemi	659	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	23.6A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C

FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.