FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TK9A65W,S5X MOSFET N-CH 650V 9.3A TO220SIS Toshiba Semiconductor and Storage	2,430	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	9.3A (Ta)	10V	500mOhm @ 4.6A, 10V	3.5V @ 350µA	20 nC @ 10 V	±30V	700 pF @ 300 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK72A08N1,S4X MOSFET N-CH 75V 80A TO220SIS Toshiba Semiconductor and Storage	19	RFQ	Datasheet	U-MOSVIII-H	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75 V	80A (Ta)	10V	4.5mOhm @ 40A, 10V	4V @ 1mA	175 nC @ 10 V	±20V	8200 pF @ 10 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK12A45D(STA4,Q,M) MOSFET N-CH 450V 12A TO220SIS Toshiba Semiconductor and Storage	3,091	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	450 V	12A (Ta)	10V	520mOhm @ 6A, 10V	4V @ 1mA	24 nC @ 10 V	±30V	1200 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK13E25D,S1X(S MOSFET N-CH 250V 13A TO220-3 Toshiba Semiconductor and Storage	6,166	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	13A (Ta)	10V	250mOhm @ 6.5A, 10V	3.5V @ 1mA	25 nC @ 10 V	±20V	1100 pF @ 100 V	-	102W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220-3
TK10A55D(STA4,Q,M) MOSFET N-CH 550V 10A TO220SIS Toshiba Semiconductor and Storage	3,557	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	550 V	10A (Ta)	10V	720mOhm @ 5A, 10V	4V @ 1mA	24 nC @ 10 V	±30V	1200 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
DI110N06D2 MOSFET, D2PAK, 60V, 110A, 150C, Diotec Semiconductor	5,287	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	110A (Tc)	10V	3.2mOhm @ 100A, 10V	4V @ 250µA	75 nC @ 10 V	±20V	4597 pF @ 25 V	-	62.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AB
IRFR9220PBF-BE3 P-CHANNEL 200V Vishay Siliconix	5,764	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	200 V	3.6A (Tc)	10V	1.5Ohm @ 2.2A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	340 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA
TPH1100CQ5,LQ 150V UMOS10-H SOP ADVANCE Toshiba Semiconductor and Storage	2,961	RFQ	Datasheet	U-MOSX-H	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	90A (Ta), 49A (Tc)	8V, 10V	11.1mOhm @ 24.5A, 10V	4.5V @ 800µA	38 nC @ 10 V	±20V	4400 pF @ 75 V	-	3W (Ta), 180W (Tc)	175°C	-	-	Surface Mount	8-SOP Advance (5x5.75)
NTD280N60S5Z SF5 600V EASY ZENER 280MOHM WITH onsemi	3,514	RFQ	Datasheet	SuperFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	280mOhm @ 5.5A, 10V	4V @ 1mA	17.9 nC @ 10 V	±20V	978 pF @ 400 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)
TK72E12N1,S1X MOSFET N CH 120V 72A TO-220 Toshiba Semiconductor and Storage	6,686	RFQ	Datasheet	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120 V	72A (Ta)	10V	4.4mOhm @ 36A, 10V	4V @ 1mA	130 nC @ 10 V	±20V	8100 pF @ 60 V	-	255W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220-3
SQJQ140E-T1_JE3 AUTOMOTIVE N-CHANNEL 40V (D-S) Vishay Siliconix	4,887	RFQ	Datasheet	TrenchFET® Gen IV	PowerPAK® 8 x 8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	701A (Tc)	10V	0.53mOhm @ 20A, 10V	3.3V @ 250µA	288 nC @ 10 V	±20V	17000 pF @ 25 V	-	600W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® 8 x 8
STP80N600K6 N-CHANNEL 800 V, 515 MOHM TYP., STMicroelectronics	20	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	7A (Tc)	10V	600mOhm @ 3A, 10V	4V @ 100µA	10.7 nC @ 10 V	±30V	540 pF @ 400 V	-	86W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
TK12A53D(STA4,Q,M) MOSFET N-CH 525V 12A TO220SIS Toshiba Semiconductor and Storage	2,379	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	525 V	12A (Ta)	10V	580mOhm @ 6A, 10V	4V @ 1mA	25 nC @ 10 V	±30V	1350 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
IPB029N06N3GE8187ATMA1 MOSFET N-CH 60V 120A D2PAK Infineon Technologies	3,234	RFQ	Datasheet	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	120A (Tc)	10V	3.2mOhm @ 100A, 10V	4V @ 118µA	165 nC @ 10 V	±20V	13000 pF @ 30 V	-	188W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3
SIDR610DP-T1-RE3 N-CHANNEL 200-V (D-S) MOSFET Vishay Siliconix	7,032	RFQ	Datasheet	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	200 V	8.9A (Ta), 39.6A (Tc)	7.5V, 10V	31.9mOhm @ 10A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	1380 pF @ 100 V	-	6.25W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8DC
NVMFS5C430NLWFET1G T6-40V N 1.4 MOHMS LL onsemi	7,459	RFQ	Datasheet	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	38A (Ta), 200A (Tc)	4.5V, 10V	1.4mOhm @ 50A, 10V	2V @ 250µA	70 nC @ 10 V	±20V	4300 pF @ 20 V	-	3.8W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount, Wettable Flank	5-DFN (5x6) (8-SOFL)
SIDR402DP-T1-GE3 MOSFET N-CH 40V 64.6A/100A PPAK Vishay Siliconix	6,198	RFQ	Datasheet	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	64.6A (Ta), 100A (Tc)	4.5V, 10V	0.88mOhm @ 20A, 10V	2.3V @ 250µA	165 nC @ 10 V	+20V, -16V	9100 pF @ 20 V	-	6.25W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8DC
TK13A50DA(STA4,Q,M MOSFET N-CH 500V 12.5A TO220SIS Toshiba Semiconductor and Storage	13	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	12.5A (Ta)	10V	470mOhm @ 6.3A, 10V	4V @ 1mA	28 nC @ 10 V	±30V	1550 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
NVMFWS2D1N08XT1G T10 80V STD NCH MOSFET SO8FL PRE onsemi	6,616	RFQ	Datasheet	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	181A (Tc)	10V	2.1mOhm @ 43A, 10V	3.6V @ 213µA	53 nC @ 6 V	±20V	3800 pF @ 40 V	-	148W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount, Wettable Flank	5-DFNW (4.9x5.9) (8-SOFL-WF)
NVMFS6H801NT3G TRENCH 8 80V NFET onsemi	4,486	RFQ	Datasheet	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	23A (Ta), 157A (Tc)	10V	2.8mOhm @ 50A, 10V	4V @ 250µA	64 nC @ 10 V	±20V	4120 pF @ 40 V	-	3.8W (Ta), 166W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	5-DFN (5x6) (8-SOFL)

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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