FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TK11A65W,S5X MOSFET N-CH 650V 11.1A TO220SIS Toshiba Semiconductor and Storage	6	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	11.1A (Ta)	10V	390mOhm @ 5.5A, 10V	3.5V @ 450µA	25 nC @ 10 V	±30V	890 pF @ 300 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK32E12N1,S1X MOSFET N CH 120V 60A TO-220 Toshiba Semiconductor and Storage	5,659	RFQ	Datasheet	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120 V	60A (Tc)	10V	13.8mOhm @ 16A, 10V	4V @ 500µA	34 nC @ 10 V	±20V	2000 pF @ 60 V	-	98W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
STF6N60M2 MOSFET N-CH 600V 4.5A TO220FP STMicroelectronics	5	RFQ	Datasheet	MDmesh™ II Plus	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	4.5A (Ta)	10V	1.2Ohm @ 2.25A, 10V	4V @ 250µA	8 nC @ 10 V	±25V	232 pF @ 100 V	-	20W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FP
SI7106DN-T1-GE3 MOSFET N-CH 20V 12.5A PPAK1212-8 Vishay Siliconix	6,321	RFQ	Datasheet	TrenchFET®	PowerPAK® 1212-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	12.5A (Ta)	2.5V, 4.5V	6.2mOhm @ 19.5A, 4.5V	1.5V @ 250µA	27 nC @ 4.5 V	±12V	-	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8
IPP60R360P7XKSA1 MOSFET N-CH 650V 9A TO220-3 Infineon Technologies	4,627	RFQ	Datasheet	CoolMOS™ P7	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	9A (Tc)	10V	360mOhm @ 2.7A, 10V	4V @ 140µA	13 nC @ 10 V	±20V	555 pF @ 400 V	-	41W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3
TK5R3E08QM,S1X UMOS10 TO-220AB 80V 5.3MOHM Toshiba Semiconductor and Storage	6	RFQ	Datasheet	U-MOSX-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	120A (Tc)	6V, 10V	5.3mOhm @ 50A, 10V	3.5V @ 700µA	55 nC @ 10 V	±20V	3980 pF @ 40 V	-	150W (Tc)	175°C	-	-	Through Hole	TO-220
STF19NF20 MOSFET N-CH 200V 15A TO220FP STMicroelectronics	2,171	RFQ	Datasheet	MESH OVERLAY™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	15A (Tc)	10V	160mOhm @ 7.5A, 10V	4V @ 250µA	24 nC @ 10 V	±20V	800 pF @ 25 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FP
SIHD6N65E-GE3 MOSFET N-CH 650V 7A DPAK Vishay Siliconix	2,977	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7A (Tc)	10V	600mOhm @ 3A, 10V	4V @ 250µA	48 nC @ 10 V	±30V	820 pF @ 100 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA
TK3R3A06PL,S4X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	6,374	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	80A (Tc)	4.5V, 10V	3.3mOhm @ 40A, 10V	2.5V @ 700µA	71 nC @ 10 V	±20V	5000 pF @ 30 V	-	42W (Tc)	175°C	-	-	Through Hole	TO-220SIS
AOT11S60L MOSFET N-CH 600V 11A TO220 Alpha & Omega Semiconductor Inc.	4,937	RFQ	Datasheet	aMOS™	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	11A (Tc)	10V	399mOhm @ 3.8A, 10V	4.1V @ 250µA	11 nC @ 10 V	±30V	545 pF @ 100 V	-	178W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
TK6A65D(STA4,Q,M) MOSFET N-CH 650V 6A TO220SIS Toshiba Semiconductor and Storage	20	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	6A (Ta)	10V	1.11Ohm @ 3A, 10V	4V @ 1mA	20 nC @ 10 V	±30V	1050 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK290A65Y,S4X MOSFET N-CH 650V 11.5A TO220SIS Toshiba Semiconductor and Storage	3,566	RFQ	Datasheet	DTMOSV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	11.5A (Tc)	10V	290mOhm @ 5.8A, 10V	4V @ 450µA	25 nC @ 10 V	±30V	730 pF @ 300 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
IRLIZ14GPBF MOSFET N-CH 60V 8A TO220-3 Vishay Siliconix	9,017	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	8A (Tc)	4V, 5V	200mOhm @ 4.8A, 5V	2V @ 250µA	8.4 nC @ 5 V	±10V	400 pF @ 25 V	-	27W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
BUK7S2R0-40HJ BUK7S2R0-40H/SOT1235/LFPAK88 Nexperia USA Inc.	8,387	RFQ	Datasheet	-	SOT-1235	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	190A (Tc)	10V	2mOhm @ 25A, 10V	3.6V @ 1mA	70 nC @ 10 V	+20V, -10V	5075 pF @ 25 V	-	183W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	LFPAK88 (SOT1235)
TK9A90E,S4X MOSFET N-CH 900V 9A TO220SIS Toshiba Semiconductor and Storage	24	RFQ	Datasheet	π-MOSVIII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	9A (Ta)	10V	1.3Ohm @ 4.5A, 10V	4V @ 900µA	46 nC @ 10 V	±30V	2000 pF @ 25 V	-	50W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
IRFS7540TRLPBF MOSFET N-CH 60V 110A D2PAK Infineon Technologies	4,886	RFQ	Datasheet	HEXFET®, StrongIRFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	110A (Tc)	6V, 10V	5.1mOhm @ 65A, 10V	3.7V @ 100µA	130 nC @ 10 V	±20V	4555 pF @ 25 V	-	160W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3
TK3R9E10PL,S1X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	5,271	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Tc)	4.5V, 10V	3.9mOhm @ 50A, 10V	2.5V @ 1mA	96 nC @ 10 V	±20V	6320 pF @ 50 V	-	230W (Tc)	175°C	-	-	Through Hole	TO-220
TK10A80E,S4X MOSFET N-CH 800V 10A TO220SIS Toshiba Semiconductor and Storage	9,697	RFQ	Datasheet	π-MOSVIII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	10A (Ta)	10V	1Ohm @ 5A, 10V	4V @ 1mA	46 nC @ 10 V	±30V	2000 pF @ 25 V	-	50W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK7J90E,S1E MOSFET N-CH 900V 7A TO3P Toshiba Semiconductor and Storage	22	RFQ	Datasheet	π-MOSVIII	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	7A (Ta)	10V	2Ohm @ 3.5A, 10V	4V @ 700µA	32 nC @ 10 V	±30V	1350 pF @ 25 V	-	200W (Tc)	150°C (TJ)	-	-	Through Hole	TO-3P(N)
TK100A06N1,S4X MOSFET N-CH 60V 100A TO220SIS Toshiba Semiconductor and Storage	6,673	RFQ	Datasheet	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	100A (Tc)	10V	2.7mOhm @ 50A, 10V	4V @ 1mA	140 nC @ 10 V	±20V	10500 pF @ 30 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.