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ELECTRONIC COMPONENTS

FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
BSS84XHZGG2CR Rohm Semiconductor

BSS84XHZGG2CR

MOSFET P-CH 60V 230MA DFN1010-3W

Rohm Semiconductor

5,345
Datasheet - 3-XFDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 230mA (Ta) - 5.3Ohm @ 230mA, 10V 2.5V @ 100µA - ±20V 34 pF @ 30 V - 1W (Ta) 150°C (TJ) Automotive AEC-Q101 Surface Mount DFN1010-3W
RQ6E035TNTR Rohm Semiconductor

RQ6E035TNTR

MOSFET N-CH 30V 3.5A TSMT6

Rohm Semiconductor

9,664
Datasheet - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 3.5A (Ta) 2.5V, 4.5V 54mOhm @ 3.5A, 4.5V 1.5V @ 1mA 6.4 nC @ 4.5 V ±12V 285 pF @ 10 V - 950mW (Ta) 150°C (TJ) - - Surface Mount TSMT6 (SC-95)
STL7N6F7 STMicroelectronics

STL7N6F7

MOSFET N-CH 60V 7A POWERFLAT

STMicroelectronics

6,283
Datasheet STripFET™ 6-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 7A (Tc) 10V 25mOhm @ 3.5A, 10V 4V @ 250µA 8 nC @ 10 V ±20V 450 pF @ 25 V - 2.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerFlat™ (2x2)
TK4K1A60F,S4X Toshiba Semiconductor and Storage

TK4K1A60F,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

7
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Ta) 10V 4.1Ohm @ 1A, 10V 4V @ 190µA 8 nC @ 10 V ±30V 270 pF @ 300 V - 30W (Tc) 150°C - - Through Hole TO-220SIS
SIR836DP-T1-GE3 Vishay Siliconix

SIR836DP-T1-GE3

MOSFET N-CH 40V 21A PPAK SO-8

Vishay Siliconix

8,425
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Tc) 4.5V, 10V 19mOhm @ 10A, 10V 2.5V @ 250µA 18 nC @ 10 V ±20V 600 pF @ 20 V - 3.9W (Ta), 15.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
CPC3708ZTR Littelfuse Inc.

CPC3708ZTR

MOSFET N-CH 350V 5MA SOT223

Littelfuse Inc.

5,275
Datasheet - TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 350 V 5mA (Ta) 0.35V 14Ohm @ 50mA, 350mV - - ±20V 300 pF @ 0 V - 2.5W (Ta) -40°C ~ 110°C (TA) - - Surface Mount SOT-223
SISA72DN-T1-GE3 Vishay Siliconix

SISA72DN-T1-GE3

MOSFET N-CH 40V 60A PPAK1212-8

Vishay Siliconix

7,101
Datasheet TrenchFET® Gen IV PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 3.5mOhm @ 10A, 10V 2.4V @ 250µA 30 nC @ 4.5 V +20V, -16V 3240 pF @ 20 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
SIS488DN-T1-GE3 Vishay Siliconix

SIS488DN-T1-GE3

MOSFET N-CH 40V 40A PPAK1212-8

Vishay Siliconix

9,682
Datasheet TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V 2.2V @ 250µA 32 nC @ 10 V ±20V 1330 pF @ 20 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
TK40E06N1,S1X Toshiba Semiconductor and Storage

TK40E06N1,S1X

MOSFET N-CH 60V 40A TO220

Toshiba Semiconductor and Storage

23
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Ta) 10V 10.4mOhm @ 20A, 10V 4V @ 300µA 23 nC @ 10 V ±20V 1700 pF @ 30 V - 67W (Tc) 150°C (TJ) - - Through Hole TO-220
IPA70R600P7SXKSA1 Infineon Technologies

IPA70R600P7SXKSA1

MOSFET N-CH 700V 8.5A TO220

Infineon Technologies

9,108
Datasheet CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 700 V 8.5A (Tc) 10V 600mOhm @ 1.8A, 10V 3.5V @ 90µA 10.5 nC @ 10 V ±16V 364 pF @ 400 V - 25W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-FP
TK1K2A60F,S4X Toshiba Semiconductor and Storage

TK1K2A60F,S4X

MOSFET N-CH 600V 6A TO220SIS

Toshiba Semiconductor and Storage

6,491
Datasheet U-MOSIX TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Ta) 10V 1.2Ohm @ 3A, 10V 4V @ 630µA 21 nC @ 10 V ±30V 740 pF @ 300 V - 35W (Tc) 150°C - - Through Hole TO-220SIS
DMT4004LPS-13 Diodes Incorporated

DMT4004LPS-13

MOSFET N-CH 40V 26A PWRDI5060

Diodes Incorporated

3,135
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 26A (Ta), 90A (Tc) 4.5V, 10V 2.5mOhm @ 50A, 10V 3V @ 250µA 82.2 nC @ 10 V ±20V 4508 pF @ 20 V - 2.6W (Ta), 138W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8
STD96N3LLH6 STMicroelectronics

STD96N3LLH6

MOSFET N-CH 30V 80A DPAK

STMicroelectronics

2,202
Datasheet DeepGATE™, STripFET™ VI TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 5.5V, 10V 4.2mOhm @ 40A, 10V 2.5V @ 250µA 20 nC @ 4.5 V ±20V 2200 pF @ 25 V - 70W (Tc) 175°C (TJ) - - Surface Mount DPAK
TK6R8A08QM,S4X Toshiba Semiconductor and Storage

TK6R8A08QM,S4X

UMOS10 TO-220SIS 80V 6.8MOHM

Toshiba Semiconductor and Storage

19
Datasheet U-MOSX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 80 V 58A (Tc) 6V, 10V 6.8mOhm @ 29A, 10V 3.5V @ 500µA 39 nC @ 10 V ±20V 2700 pF @ 40 V - 41W (Tc) 175°C - - Through Hole TO-220SIS
BSC0503NSIATMA1 Infineon Technologies

BSC0503NSIATMA1

MOSFET N-CH 30V 22A/88A TDSON

Infineon Technologies

7,607
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 88A (Tc) 4.5V, 10V 3mOhm @ 30A, 10V 2V @ 250µA 20 nC @ 10 V ±20V 1300 pF @ 15 V - 2.5W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-6
TK110E10PL,S1X Toshiba Semiconductor and Storage

TK110E10PL,S1X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

5,429
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 10.7mOhm @ 21A, 10V 2.5V @ 300µA 33 nC @ 10 V ±20V 2040 pF @ 50 V - 87W (Tc) 175°C - - Through Hole TO-220
TK22A10N1,S4X Toshiba Semiconductor and Storage

TK22A10N1,S4X

MOSFET N-CH 100V 22A TO220SIS

Toshiba Semiconductor and Storage

1
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 10V 13.8mOhm @ 11A, 10V 4V @ 300µA 28 nC @ 10 V ±20V 1800 pF @ 50 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
SIHA5N80AE-GE3 Vishay Siliconix

SIHA5N80AE-GE3

E SERIES POWER MOSFET THIN-LEAD

Vishay Siliconix

2,322
Datasheet E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 1.35Ohm @ 1.5A, 10V 4V @ 250µA 16.5 nC @ 10 V ±30V 321 pF @ 100 V - 29W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
IPA041N04NGXKSA1 Infineon Technologies

IPA041N04NGXKSA1

MOSFET N-CH 40V 70A TO220-FP

Infineon Technologies

10
Datasheet OptiMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 10V 4.1mOhm @ 70A, 10V 4V @ 45µA 56 nC @ 10 V ±20V 4500 pF @ 20 V - 35W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-FP
TK42A12N1,S4X Toshiba Semiconductor and Storage

TK42A12N1,S4X

MOSFET N-CH 120V 42A TO220SIS

Toshiba Semiconductor and Storage

9,325
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 120 V 42A (Tc) 10V 9.4mOhm @ 21A, 10V 4V @ 1mA 52 nC @ 10 V ±20V 3100 pF @ 60 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

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Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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