FETs, MOSFETs
Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRLZ44PBFMOSFET N-CH 60V 50A TO220AB |
8,341 |
|
Datasheet | - | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4V, 5V | 28mOhm @ 31A, 5V | 2V @ 250µA | 66 nC @ 5 V | ±10V | 3300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
SPP11N60C3XKSA1MOSFET N-CH 650V 11A TO220-3 |
4 |
|
Datasheet | CoolMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
SI7463DP-T1-GE3MOSFET P-CH 40V 11A PPAK SO-8 |
9,772 |
|
Datasheet | TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 40 V | 11A (Ta) | 4.5V, 10V | 9.2mOhm @ 18.6A, 10V | 3V @ 250µA | 140 nC @ 10 V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
|
IRFB9N60APBFMOSFET N-CH 600V 9.2A TO220AB |
5,840 |
|
Datasheet | - | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
ISCH42N04LM7ATMA1ISCH42N04LM7ATMA1 |
5,881 |
|
Datasheet | OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 61A (Ta), 541A (Tc) | 4.5V, 10V | 0.42mOhm @ 50A, 10V | 1.8V @ 130µA | 207 nC @ 10 V | ±20V | 13000 pF @ 20 V | - | 3W (Ta), 234W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8 |
|
|
NTMFS002N10MCLT1GPTNG 100V LL SO8FL HE |
9,887 |
|
Datasheet | - | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 22A (Ta), 175A (Tc) | 4.5V, 10V | 2.8mOhm @ 50A, 10V | 3V @ 351µA | 97 nC @ 10 V | ±20V | 7200 pF @ 50 V | - | 3W (Ta), 189W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |
|
CSD19535KTTMOSFET N-CH 100V 200A DDPAK |
1 |
|
Datasheet | NexFET™ | TO-263-4, D2PAK (3 Leads + Tab), TO-263AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 200A (Ta) | 6V, 10V | 3.4mOhm @ 100A, 10V | 3.4V @ 250µA | 98 nC @ 10 V | ±20V | 7930 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (DDPAK-3) |
|
IXTY15P15TMOSFET P-CH 150V 15A TO252 |
18 |
|
Datasheet | TrenchP™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 15A (Tc) | 10V | 240mOhm @ 7A, 10V | 4.5V @ 250µA | 48 nC @ 10 V | ±15V | 3650 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
IPL60R199CPAUMA1MOSFET N-CH 600V 16.4A 4VSON |
4 |
|
Datasheet | CoolMOS™ CP | 4-PowerTSFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 16.4A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 32 nC @ 10 V | ±20V | 1520 pF @ 100 V | - | 139W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
HUF75639G3MOSFET N-CH 100V 56A TO247-3 |
1 |
|
Datasheet | UltraFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
IXTY01N100D-TRLMOSFET N-CH 1000V 400MA TO252AA |
5,791 |
|
Datasheet | Depletion | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 1000 V | 400mA (Tc) | 0V | 80Ohm @ 50mA, 0V | 4.5V @ 25µA | 5.8 nC @ 5 V | ±20V | 100 pF @ 25 V | - | 1.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
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IMBG65R260M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- |
5,294 |
|
Datasheet | CoolSIC™ M1 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 6A (Tc) | 18V | 346mOhm @ 3.6A, 18V | 5.7V @ 1.1mA | 6 nC @ 18 V | +23V, -5V | 201 pF @ 400 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
|
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NTHL1000N170M1SILICON CARBIDE (SIC) MOSFET EL |
7,100 |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 4.2A (Tc) | 20V | 1.43Ohm @ 2A, 20V | 4.3V @ 640µA | 14 nC @ 20 V | +25V, -15V | 150 pF @ 1000 V | - | 48W | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
IPA105N15N3GXKSA1MOSFET N-CH 150V 37A TO220-FP |
9,619 |
|
Datasheet | OptiMOS™ | TO-220-3 Full Pack | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 150 V | 37A (Tc) | 8V, 10V | 10.5mOhm @ 37A, 10V | 4V @ 160µA | 55 nC @ 10 V | ±20V | 4300 pF @ 75 V | - | 40.5W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
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NTP5D0N15MCMOSFET N-CH 150V 15A/139A TO220 |
8,796 |
|
Datasheet | PowerTrench® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 15A (Ta), 139A (Tc) | 10V | 5mOhm @ 97A, 10V | 4.5V @ 532µA | 75 nC @ 10 V | ±20V | 6300 pF @ 75 V | - | 2.4W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
|
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ISC030N12NM6ATMA1OPTIMOS 6 POWER-TRANSISTOR,120V |
14 |
|
Datasheet | OptiMOS™ 6 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 21A (Ta), 194A (Tc) | 8V, 10V | 3.04mOhm @ 50A, 10V | 3.6V @ 141µA | 74 nC @ 10 V | ±20V | 5500 pF @ 60 V | - | 3W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSON-8-3 |
|
IXFA60N25X3MOSFET N-CH 250V 60A TO263AA |
5,121 |
|
Datasheet | HiPerFET™, Ultra X3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 60A (Tc) | 10V | 23mOhm @ 30A, 10V | 4.5V @ 1.5mA | 50 nC @ 10 V | ±20V | 3610 pF @ 25 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
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IXTA120P065TMOSFET P-CH 65V 120A TO263 |
8 |
|
Datasheet | TrenchP™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 65 V | 120A (Tc) | 10V | 10mOhm @ 500mA, 10V | 4V @ 250µA | 185 nC @ 10 V | ±15V | 13200 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AA |
|
|
NTBLS0D8N08XTXGMOSFET, POWER 80V SINGLE N-CHANN |
5,220 |
|
Datasheet | - | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 457A (Tc) | 6V, 10V | 0.79mOhm @ 80A, 10V | 3.6V @ 720µA | 174 nC @ 10 V | ±20V | 12920 pF @ 40 V | - | 325W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-HPSOF |
|
STP20NM60MOSFET N-CH 600V 20A TO220AB |
8,736 |
|
Datasheet | MDmesh™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 290mOhm @ 10A, 10V | 5V @ 250µA | 54 nC @ 10 V | ±30V | 1500 pF @ 25 V | - | 192W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
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