FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
NDBA100N10BT4H MOSFET N-CH 100V 100A D2PAK onsemi	5,532	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Ta)	10V, 15V	6.9mOhm @ 50A, 15V	4V @ 1mA	35 nC @ 10 V	±20V	2950 pF @ 50 V	-	110W (Tc)	175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IPP070N08N3GXKSA1 N-CHANNEL POWER MOSFET Infineon Technologies	7,700	RFQ	Datasheet	OptiMOS™ 3	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	80 V	80A (Tc)	6V, 10V	7mOhm @ 73A, 10V	3.5V @ 73µA	56 nC @ 10 V	±20V	3840 pF @ 40 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3
AUIRFU8403-701TRL AUTOMOTIVE HEXFET POWER MOSFET International Rectifier	7,680	RFQ	Datasheet	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	100A (Tc)	10V	3.1mOhm @ 76A, 10V	3.9V @ 100µA	99 nC @ 10 V	±20V	3171 pF @ 25 V	-	99W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO251-3-901
BUK9245-55A,118 MOSFET N-CH 55V 28A DPAK Nexperia USA Inc.	4,687	RFQ	Datasheet	TrenchMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	28A (Tc)	4.5V, 10V	40mOhm @ 5A, 10V	2V @ 1mA	14 nC @ 5 V	±15V	1006 pF @ 25 V	-	70W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	DPAK
BUK7E2R3-40C,127 MOSFET N-CH 40V 100A I2PAK NXP USA Inc.	4,893	RFQ	Datasheet	*	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJQ5465A_R2_00001 60V P-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	4,279	RFQ	Datasheet	-	8-PowerVDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	5A (Ta), 16A (Tc)	4.5V, 10V	48mOhm @ 8A, 10V	2.5V @ 250µA	22 nC @ 10 V	±20V	1256 pF @ 30 V	-	2W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN5060-8
G130N06S MOSFET, N-CH,60V,9A,RD(MAX)<12M@ Goford Semiconductor	3,990	RFQ	Datasheet	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	9A (Tc)	4.5V, 10V	12mOhm @ 10A, 10V	2.5V @ 250µA	67 nC @ 10 V	±20V	3068 pF @ 30 V	-	2.6W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOP
AO4459 SOP-8 MOSFETS ROHS UMW	2,701	RFQ	Datasheet	UMW	8-SOIC (0.154", 3.90mm Width)	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	6.5A (Ta)	4.5V, 10V	42mOhm @ 6.5A, 10V	2.5V @ 250µA	11 nC @ 10 V	±20V	520 pF @ 15 V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOP
PJQ5446_R2_00001 40V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	2,666	RFQ	Datasheet	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	12A (Ta), 70A (Tc)	4.5V, 10V	9.5mOhm @ 12A, 10V	2.5V @ 250µA	22 nC @ 10 V	±20V	1258 pF @ 25 V	-	2W (Ta), 70W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN5060-8
PJQ2405_R1_00001 20V P-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	2,259	RFQ	Datasheet	-	6-WDFN Exposed Pad	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	7.2A (Ta)	1.8V, 4.5V	32mOhm @ 7.2A, 4.5V	900mV @ 250µA	18.9 nC @ 4.5 V	±8V	1785 pF @ 10 V	-	2.8W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN2020B-6
PJQ5466A1_R2_00001 60V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	1,970	RFQ	Datasheet	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	7.4A (Ta), 48A (Tc)	4.5V, 10V	17mOhm @ 20A, 10V	2.5V @ 250µA	13.5 nC @ 4.5 V	±20V	1574 pF @ 25 V	-	2W (Ta), 83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN5060-8
RFM3N45 N-CHANNEL POWER MOSFET Harris Corporation	1,840	RFQ	Datasheet	-	TO-204AA, TO-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	450 V	3A (Tc)	10V	3Ohm @ 1.5A, 10V	4V @ 1mA	-	±20V	750 pF @ 25 V	-	75W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3
RF1S45N06LE 45A, 60V, 0.028OHM, N-CHANNEL, Harris Corporation	1,530	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	45A (Tc)	5V	28mOhm @ 45A, 5V	2V @ 250µA	135 nC @ 10 V	±10V	2150 pF @ 25 V	-	142W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262 (I2PAK)
NTMFS23D9N06HLT1G T8 60V LOW COSS onsemi	1,500	RFQ	Datasheet	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	-	-	-	8.1A (Ta), 23A (Tc)	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	5-DFN (5x6) (8-SOFL)
AUIRLZ44Z MOSFET N-CH 55V 51A TO220AB Infineon Technologies	4,841	RFQ	Datasheet	HEXFET®	TO-220-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	51A (Tc)	4.5V, 10V	13.5mOhm @ 31A, 10V	3V @ 250µA	36 nC @ 5 V	±16V	1620 pF @ 25 V	-	80W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
HUFA75344P3 MOSFET N-CH 55V 75A TO220-3 Fairchild Semiconductor	1,054	RFQ	Datasheet	UltraFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	75A (Tc)	10V	8mOhm @ 75A, 10V	4V @ 250µA	210 nC @ 20 V	±20V	3200 pF @ 25 V	-	285W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
RJK03P3DPA-00#J5A N-CHANNEL POWER MOSFET Renesas Electronics Corporation	816,000	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDD6676AS MOSFET N-CH 30V 90A TO252 Fairchild Semiconductor	209,310	RFQ	Datasheet	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	90A (Ta)	4.5V, 10V	5.7mOhm @ 16A, 10V	3V @ 1mA	64 nC @ 10 V	±20V	2500 pF @ 15 V	-	70W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)
FQP2N60 MOSFET N-CH 600V 2.4A TO220-3 Fairchild Semiconductor	84,915	RFQ	Datasheet	QFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	2.4A (Tc)	10V	4.7Ohm @ 1.2A, 10V	4V @ 250µA	11 nC @ 10 V	±30V	350 pF @ 25 V	-	64W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
IPB50R299CPATMA1 MOSFET N-CH 550V 12A TO263-3 Infineon Technologies	8,142	RFQ	Datasheet	CoolMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	550 V	12A (Tc)	10V	299mOhm @ 6.6A, 10V	3.5V @ 440µA	31 nC @ 10 V	±20V	1190 pF @ 100 V	-	104W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3-2

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.