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FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SI2316BDS-T1-BE3 Vishay Siliconix

SI2316BDS-T1-BE3

N-CHANNEL 30-V (D-S) MOSFET

Vishay Siliconix

10,338
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 3.9A (Ta), 4.5A (Tc) 4.5V, 10V 50mOhm @ 3.9A, 10V 3V @ 250µA 9.6 nC @ 10 V ±20V 350 pF @ 15 V - 1.25W (Ta), 1.66W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
RF1S50N06SM9A Fairchild Semiconductor

RF1S50N06SM9A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

9,898
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 22mOhm @ 50A, 10V 4V @ 250µA 150 nC @ 20 V ±20V 2020 pF @ 25 V - 131W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AB
ISL9N306AD3 Fairchild Semiconductor

ISL9N306AD3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

5,400
Datasheet UltraFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6mOhm @ 50A, 10V 3V @ 250µA 90 nC @ 10 V ±20V 3400 pF @ 15 V - 125W (Ta) -55°C ~ 175°C (TJ) - - Through Hole IPAK
GSFD65R900 Good-Ark Semiconductor

GSFD65R900

MOSFET, N-CH, SINGLE, 5.00A, 650

Good-Ark Semiconductor

5,000
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 5A (Tc) 10V 900mOhm @ 2.5A, 10V 4V @ 250µA 13 nC @ 10 V ±30V 300 pF @ 100 V - 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
GSFD4003 Good-Ark Semiconductor

GSFD4003

MOSFET, N-CH, SINGLE, 240.00A, 4

Good-Ark Semiconductor

5,000
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 6V, 10V 3mOhm @ 80A, 10V 3.9V @ 250µA 108 nC @ 10 V ±20V 5700 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
GSJD60R880 Good-Ark Semiconductor

GSJD60R880

MOSFET, N-CH, SINGLE, 5.00A, 600

Good-Ark Semiconductor

4,995
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Tc) 10V 880mOhm @ 2.5A, 10V 4V @ 250µA 12 nC @ 10 V ±30V 304 pF @ 100 V - 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
BUK9E1R9-40E,127 NXP USA Inc.

BUK9E1R9-40E,127

MOSFET N-CH 40V I2PAK

NXP USA Inc.

2,360
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tj) - - - - - - - - -55°C ~ 175°C (TJ) - - Through Hole I2PAK
G085P02TS Goford Semiconductor

G085P02TS

P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V

Goford Semiconductor

4,480
Datasheet - 8-TSSOP (0.173", 4.40mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 20 V 8.2A (Tc) 1.8V, 4.5V 8.5mOhm @ 4.2A, 4.5V 900mV @ 250µA 29 nC @ 10 V ±8V 1255 pF @ 10 V - 1.05W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
SI2307BDS-T1-GE3 Vishay Siliconix

SI2307BDS-T1-GE3

MOSFET P-CH 30V 2.5A SOT23-3

Vishay Siliconix

4,149
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2.5A (Ta) 10V 78mOhm @ 3.2A, 10V 3V @ 250µA 15 nC @ 10 V ±20V 380 pF @ 15 V - 750mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
G300P06S Goford Semiconductor

G300P06S

P-CH,-60V,-12A,RD(MAX)<30M@-10V,

Goford Semiconductor

3,391
Datasheet - 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 10V 30mOhm @ 8A, 10V 3V @ 250µA 49 nC @ 10 V ±20V 2719 pF @ 30 V - 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
IPB034N06N3G Infineon Technologies

IPB034N06N3G

N-CHANNEL POWER MOSFET

Infineon Technologies

3,146
Datasheet OptiMOS™ 3 TO-263-7, D2PAK (6 Leads + Tab) Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.4mOhm @ 100A, 10V 4V @ 93µA 130 nC @ 10 V ±20V 11000 pF @ 30 V - 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-3
FDS6681Z UMW

FDS6681Z

MOSFET P-CH 30V 20A 8SOIC

UMW

3,000
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
FDS6570A UMW

FDS6570A

MOSFET N-CH 20V 15A 8SOIC

UMW

2,900
Datasheet * - Cut Tape (CT) Active - - - - - - - - - - - - - - - - -
HUF75631SK8 Fairchild Semiconductor

HUF75631SK8

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,572
Datasheet UltraFET® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 5.5A (Ta) 10V 39mOhm @ 5.5A, 10V 4V @ 250µA 79 nC @ 20 V ±20V 1225 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
IRFR5505TR UMW

IRFR5505TR

MOSFET P-CH 55V 18A DPAK

UMW

2,500
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
NTD4804NT4G UMW

NTD4804NT4G

MOSFET N-CH 30V 124A DPAK

UMW

2,500
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SPD30P06PG UMW

SPD30P06PG

MOSFET P-CH 60V 30A DPAK

UMW

2,490
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
RF1S45N06LESM9A Harris Corporation

RF1S45N06LESM9A

N-CHANNEL POWER MOSFET

Harris Corporation

1,600
Datasheet - - Bulk Active - - - - - - - - - - - - - - - - -
SI3442BDV-T1-BE3 Vishay Siliconix

SI3442BDV-T1-BE3

N-CHANNEL 2.5-V (G-S) MOSFET

Vishay Siliconix

1,507
Datasheet - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 57mOhm @ 4A, 4.5V 1.8V @ 250µA 5 nC @ 4.5 V ±12V 295 pF @ 10 V - 860mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
G40P03K Goford Semiconductor

G40P03K

P-30V,RD(MAX)<9.5M@-10V,RD(MAX)<

Goford Semiconductor

1,375
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 10mOhm @ 15A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 2622 pF @ 15 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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