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FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G26P04D5 Goford Semiconductor

G26P04D5

P40V,RD(MAX)<18M@-10V,RD(MAX)<22

Goford Semiconductor

4,995
Datasheet TrenchFET® 8-PowerTDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 40 V 26A (Tc) 4.5V, 10V 18mOhm @ 12A, 10V 2.5V @ 250µA 45 nC @ 10 V ±20V 2479 pF @ 20 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
FDB8870-F085 Fairchild Semiconductor

FDB8870-F085

MOSFET N-CH 30V 23A/160A D2PAK

Fairchild Semiconductor

4,800
Datasheet PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 160A (Tc) - 3.9mOhm @ 35A, 10V 2.5V @ 250µA 132 nC @ 10 V ±20V 5200 pF @ 15 V - 160W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
FDD044AN03L Fairchild Semiconductor

FDD044AN03L

MOSFET N-CH 30V 21A/35A TO252AA

Fairchild Semiconductor

4,060
Datasheet PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 35A (Tc) 4.5V, 10V 3.9mOhm @ 35A, 10V 2.5V @ 250µA 118 nC @ 10 V ±20V 5160 pF @ 15 V - 160W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
HUF76132S3S Fairchild Semiconductor

HUF76132S3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

4,000
Datasheet UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 11mOhm @ 75A, 10V 3V @ 250µA 52 nC @ 10 V ±20V 1650 pF @ 25 V - 120W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount TO-263AB
NDB6030PL Fairchild Semiconductor

NDB6030PL

30A, 30V, 0.025OHM, P-CHANNEL,

Fairchild Semiconductor

3,647
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 25mOhm @ 19A, 10V 2V @ 250µA 36 nC @ 5 V ±16V 1570 pF @ 15 V - 75W (Tc) -65°C ~ 175°C (TJ) - - Surface Mount TO-263AB (D2PAK)
IRF9328TR UMW

IRF9328TR

MOSFET P-CH 30V 12A 8SOIC

UMW

3,000
Datasheet * 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 11.9mOhm @ 12A, 10V 2.4V @ 25µA - ±20V - - 2.5W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount 8-SOIC
FQAF17P10 Fairchild Semiconductor

FQAF17P10

MOSFET P-CH 100V 12.4A TO3PF

Fairchild Semiconductor

2,972
Datasheet QFET® TO-3P-3 Full Pack Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 12.4A (Tc) 10V 190mOhm @ 6.2A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 56W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-3PF
FDU044AN03L Fairchild Semiconductor

FDU044AN03L

MOSFET N-CH 30V 21A/35A IPAK

Fairchild Semiconductor

2,806
Datasheet PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 35A (Tc) 4.5V, 10V 3.9mOhm @ 35A, 10V 2.5V @ 250µA 118 nC @ 10 V ±20V 5160 pF @ 15 V - 160W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
IRLR2905TR UMW

IRLR2905TR

MOSFET N-CH 55V 42A DPAK

UMW

2,500
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
FQD13N10LTM UMW

FQD13N10LTM

MOSFET N-CH 100V 10A DPAK

UMW

2,500
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IRFR3910TR UMW

IRFR3910TR

MOSFET N-CH 100V 16A DPAK

UMW

2,500
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
RJK0358DPA-WS#J0 Renesas Electronics Corporation

RJK0358DPA-WS#J0

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

2,260
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
G16P03S Goford Semiconductor

G16P03S

P30V,RD(MAX)<12M@-10V,RD(MAX)<18

Goford Semiconductor

2,234
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 35 nC @ 10 V ±20V 2800 pF @ 15 V - 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
FQI32N20CTU Fairchild Semiconductor

FQI32N20CTU

MOSFET N-CH 200V 28A I2PAK

Fairchild Semiconductor

1,832
Datasheet QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 28A (Tc) 10V 82mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2220 pF @ 25 V - 3.13W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
RF1S50N06LESM Harris Corporation

RF1S50N06LESM

N-CHANNEL POWER MOSFET

Harris Corporation

1,705
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 5V 22mOhm @ 50A, 5V 2V @ 250µA 120 nC @ 10 V ±10V 2100 pF @ 25 V - 142W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AB
SPD50N03S2L06T Infineon Technologies

SPD50N03S2L06T

MOSFET N-CH 30V 50A TO252-3

Infineon Technologies

1,629
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6.4mOhm @ 50A, 10V 2V @ 85µA 68 nC @ 10 V ±20V 2530 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
NP40N055KLE-E1-AY Renesas Electronics Corporation

NP40N055KLE-E1-AY

MOSFET N-CH 55V 40A TO263

Renesas Electronics Corporation

1,600
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 55 V 40A (Tc) - 23mOhm @ 20A, 10V 2.5V @ 250µA 41 nC @ 5 V - 1950 pF @ 25 V - 1.8W (Ta), 66W (Tc) 175°C (TJ) - - Surface Mount TO-263
HUFA75333G3 Fairchild Semiconductor

HUFA75333G3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,512
Datasheet UltraFET® TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 66A (Tc) 10V 16mOhm @ 66A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
FDP6676S Fairchild Semiconductor

FDP6676S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,485
Datasheet PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 76A (Ta) 4.5V, 10V 6.5mOhm @ 38A, 10V 3V @ 1mA 56 nC @ 5 V ±16V 4853 pF @ 15 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
FQPF9N50C Fairchild Semiconductor

FQPF9N50C

MOSFET N-CH 500V 9A TO220-3

Fairchild Semiconductor

272,903
Datasheet QFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) - 800mOhm @ 4.5A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 1030 pF @ 25 V - 44W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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