FETs, MOSFETs
Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GA20JT12-247TRANS SJT 1200V 20A TO247AB |
6,962 |
|
Datasheet | - | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 20A (Tc) | - | 70mOhm @ 20A | - | - | - | - | - | 282W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
|
GA20JT12-263TRANS SJT 1200V 45A D2PAK |
8,894 |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 45A (Tc) | - | 60mOhm @ 20A | - | - | - | 3091 pF @ 800 V | - | 282W (Tc) | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
IRFPS38N60LMOSFET N-CH 600V 38A SUPER247 |
5,585 |
|
Datasheet | - | TO-274AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | 10V | 150mOhm @ 23A, 10V | 5V @ 250µA | 320 nC @ 10 V | ±30V | 7990 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | SUPER-247™ (TO-274AA) |
|
IGT60R070D1ATMA1GANFET N-CH 600V 31A 8HSOF |
7,244 |
|
Datasheet | CoolGaN™ | 8-PowerSFN | Tape & Reel (TR) | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-3 |
|
APT44F80B2MOSFET N-CH 800V 47A T-MAX |
9,462 |
|
Datasheet | POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 47A (Tc) | 10V | 210mOhm @ 24A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9330 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
APT20M22LVFRGMOSFET N-CH 200V 100A TO264 |
7,581 |
|
Datasheet | POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | 10V | 22mOhm @ 500mA, 10V | 4V @ 2.5mA | 435 nC @ 10 V | ±30V | 10200 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
|
IXFN140N25TMOSFET N-CH 250V 120A SOT227B |
7,521 |
|
Datasheet | HiPerFET™, Trench | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 120A (Tc) | 10V | 17mOhm @ 60A, 10V | 5V @ 4mA | 255 nC @ 10 V | ±20V | 19000 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
SCT011H75G3AGMOSFET 750 V 110A H2PAK7 |
4,861 |
|
Datasheet | * | - | Cut Tape (CT) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
APT6015LVFRGMOSFET N-CH 600V 38A TO264 |
7,741 |
|
Datasheet | POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | - | 150mOhm @ 500mA, 10V | 4V @ 2.5mA | 475 nC @ 10 V | - | 9000 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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|
IXFX26N100PMOSFET N-CH 1000V 26A PLUS247-3 |
6,123 |
|
Datasheet | HiPerFET™, Polar | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 26A (Tc) | 10V | 390mOhm @ 13A, 10V | 6.5V @ 1mA | 197 nC @ 10 V | ±30V | 11900 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
IXFL38N100PMOSFET N-CH 1000V 29A I5PAK |
5,393 |
|
Datasheet | HiPerFET™, Polar | ISOPLUSi5-PAK™ | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 29A (Tc) | 10V | 230mOhm @ 19A, 10V | 6.5V @ 1mA | 350 nC @ 10 V | ±30V | 24000 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUSi5-Pak™ |
|
|
IXFN280N085MOSFET N-CH 85V 280A SOT-227B |
6,597 |
|
Datasheet | HiPerFET™ | SOT-227-4, miniBLOC | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 85 V | 280A (Tc) | 10V | 4.4mOhm @ 100A, 10V | 4V @ 8mA | 580 nC @ 10 V | ±20V | 19000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
IGOT60R070D1AUMA1GANFET N-CH 600V 31A 20DSO |
6,804 |
|
Datasheet | CoolGaN™ | 20-PowerSOIC (0.433", 11.00mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-20-87 |
|
APT20M19JVRMOSFET N-CH 200V 112A ISOTOP |
4,231 |
|
Datasheet | POWER MOS V® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 112A (Tc) | 10V | 19mOhm @ 500mA, 10V | 4V @ 1mA | 495 nC @ 10 V | ±30V | 11640 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
IXFK26N100PMOSFET N-CH 1000V 26A TO264AA |
6,744 |
|
Datasheet | HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 26A (Tc) | 10V | 390mOhm @ 13A, 10V | 6.5V @ 1mA | 197 nC @ 10 V | ±30V | 11900 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
IXFZ140N25TMOSFET N-CH 250V 100A DE475 |
3,028 |
|
Datasheet | HiPerFET™, Trench | 6-SMD, Flat Leads | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 100A (Tc) | 10V | 17mOhm @ 60A, 10V | 5V @ 4mA | 255 nC @ 10 V | ±20V | 19000 pF @ 25 V | - | 445W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DE475 |
|
VS-FB180SA10PMOSFET N-CH 100V 180A SOT-227 |
8,909 |
|
Datasheet | - | SOT-227-4, miniBLOC | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 6.5mOhm @ 180A, 10V | 4V @ 250µA | 380 nC @ 10 V | ±20V | 10700 pF @ 25 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
|
IXFN110N65X3DISCRETE MOSFET 110A 650V X3 SOT |
9,460 |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IXFX26N120PMOSFET N-CH 1200V 26A PLUS247-3 |
2,572 |
|
Datasheet | HiPerFET™, Polar | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 26A (Tc) | 10V | 500mOhm @ 13A, 10V | 6.5V @ 1mA | 225 nC @ 10 V | ±30V | 16000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
|
IXFN32N60MOSFET N-CH 600V 32A SOT227B |
6,482 |
|
Datasheet | HiPerFET™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 250mOhm @ 500mA, 10V | 4.5V @ 8mA | 325 nC @ 10 V | ±20V | 9000 pF @ 25 V | - | 520AW (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.
