FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
APT1201R4SFLLG MOSFET N-CH 1200V 9A D3PAK Microchip Technology	6,540	RFQ	Datasheet	POWER MOS 7®	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	9A (Tc)	-	1.4Ohm @ 4.5A, 10V	5V @ 1mA	120 nC @ 10 V	-	2500 pF @ 25 V	-	-	-	-	-	Surface Mount	D3PAK
APT6013B2LLG MOSFET N-CH 600V 43A T-MAX Microchip Technology	9,543	RFQ	Datasheet	POWER MOS 7®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	43A (Tc)	-	130mOhm @ 21.5A, 10V	5V @ 2.5mA	130 nC @ 10 V	-	5630 pF @ 25 V	-	-	-	-	-	Through Hole	T-MAX™ [B2]
APT6013LLLG MOSFET N-CH 600V 43A TO264 Microchip Technology	2,093	RFQ	Datasheet	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	43A (Tc)	10V	130mOhm @ 21.5A, 10V	5V @ 2.5mA	130 nC @ 10 V	±30V	5630 pF @ 25 V	-	565W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 [L]
GA10SICP12-263 TRANS SJT 1200V 25A D2PAK GeneSiC Semiconductor	3,835	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	-	SiC (Silicon Carbide Junction Transistor)	1200 V	25A (Tc)	-	100mOhm @ 10A	-	-	-	1403 pF @ 800 V	-	170W (Tc)	175°C (TJ)	-	-	Surface Mount	TO-263-7
APT5510JFLL MOSFET N-CH 550V 44A ISOTOP Microsemi Corporation	2,900	RFQ	Datasheet	POWER MOS 7®	SOT-227-4, miniBLOC	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	550 V	44A (Tc)	10V	100mOhm @ 22A, 10V	5V @ 2.5mA	124 nC @ 10 V	±30V	5823 pF @ 25 V	-	463W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	ISOTOP®
SCTH50N120-7 SICFET N-CH 1200V 65A H2PAK-7 STMicroelectronics	8,993	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Obsolete	N-Channel	SiCFET (Silicon Carbide)	1200 V	65A	20V	69mOhm @ 40A, 20V	5.1V @ 1mA	122 nC @ 20 V	+22V, -10V	1900 pF @ 400 V	-	270W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	H2PAK-7
IXTR210P10T MOSFET P-CH 100V 195A ISOPLUS247 Littelfuse Inc.	2,266	RFQ	Datasheet	TrenchP™	TO-247-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	195A (Tc)	10V	8mOhm @ 105A, 10V	4.5V @ 250µA	740 nC @ 10 V	±15V	69500 pF @ 25 V	-	595W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ISOPLUS247™
IXTT4N150HV-TRL MOSFET N-CH 1500V 4A TO268HV Littelfuse Inc.	6,354	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1500 V	4A (Tc)	10V	6Ohm @ 2A, 10V	5V @ 250µA	44.5 nC @ 10 V	±30V	1576 pF @ 25 V	-	280W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268HV (IXTT)
IXFL40N110P MOSFET N-CH 1100V 21A ISOPLUS264 IXYS	6,970	RFQ	Datasheet	HiPerFET™, Polar	TO-264-3, TO-264AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	1100 V	21A (Tc)	10V	280mOhm @ 20A, 10V	6.5V @ 1mA	310 nC @ 10 V	±30V	19000 pF @ 25 V	-	-	-	-	-	Through Hole	ISOPLUS264™
APT12080LVRG MOSFET N-CH 1200V 16A TO264 Microchip Technology	5,789	RFQ	Datasheet	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	16A (Tc)	10V	800mOhm @ 8A, 10V	4V @ 2.5mA	485 nC @ 10 V	±30V	7800 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (L)
SCT30N120H SICFET N-CH 1200V 40A H2PAK-2 STMicroelectronics	6,036	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	20V	100mOhm @ 20A, 20V	3.5V @ 1mA	105 nC @ 20 V	+25V, -10V	1700 pF @ 400 V	-	270W (Tc)	-55°C ~ 200°C (TJ)	-	-	Surface Mount	H2PAK-2
STE110NS20FD MOSFET N-CH 200V 110A ISOTOP STMicroelectronics	2,812	RFQ	Datasheet	MESH OVERLAY™	ISOTOP	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	110A (Tc)	10V	24mOhm @ 50A, 10V	4V @ 250µA	504 nC @ 10 V	±20V	7900 pF @ 25 V	-	500W (Tc)	150°C (TJ)	-	-	Chassis Mount	ISOTOP®
IXFN120N60X3 DISCRETE MOSFET 120A 600V X3 SOT Littelfuse Inc.	9,951	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT56F60B2 MOSFET N-CH 600V 60A T-MAX Microchip Technology	7,323	RFQ	Datasheet	POWER MOS 8™	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	60A (Tc)	10V	110mOhm @ 28A, 10V	5V @ 2.5mA	280 nC @ 10 V	±30V	11300 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
GS66516T-TR GS66516T-TR Infineon Technologies Canada Inc.	4,762	RFQ	Datasheet	-	4-SMD, No Lead	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	60A (Tc)	6V	32mOhm @ 18A, 6V	1.3V @ 14mA	12.1 nC @ 6 V	+7V, -10V	520 pF @ 400 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	-
IXFN340N06 MOSFET N-CH 60V 340A SOT-227B IXYS	7,843	RFQ	Datasheet	HiPerFET™	SOT-227-4, miniBLOC	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	60 V	340A (Tc)	10V	3mOhm @ 100A, 10V	4V @ 8mA	600 nC @ 10 V	±20V	16800 pF @ 25 V	-	700W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
IXFR26N100P MOSFET N-CH 1000V 15A ISOPLUS247 Littelfuse Inc.	6,926	RFQ	Datasheet	HiPerFET™, Polar	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	15A (Tc)	10V	430mOhm @ 13A, 10V	6.5V @ 1mA	197 nC @ 10 V	±30V	11900 pF @ 25 V	-	290W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ISOPLUS247™
APT10050LVFRG MOSFET N-CH 1000V 21A TO264 Microchip Technology	9,103	RFQ	Datasheet	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	21A (Tc)	-	500mOhm @ 500mA, 10V	4V @ 2.5mA	500 nC @ 10 V	-	7900 pF @ 25 V	-	-	-	-	-	Through Hole	TO-264 [L]
APT10050B2VFRG MOSFET N-CH 1000V 21A T-MAX Microchip Technology	6,737	RFQ	Datasheet	POWER MOS V®	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	21A (Tc)	-	500mOhm @ 500mA, 10V	4V @ 2.5mA	500 nC @ 10 V	-	7900 pF @ 25 V	-	-	-	-	-	Through Hole	T-MAX™ [B2]
IXFN72N55Q2 MOSFET N-CH 550V 72A SOT-227B IXYS	4,377	RFQ	Datasheet	HiPerFET™, Q2 Class	SOT-227-4, miniBLOC	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	550 V	72A (Tc)	10V	72mOhm @ 500mA, 10V	5V @ 8mA	258 nC @ 10 V	±30V	10500 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.