FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
APT66M60B2 MOSFET N-CH 600V 70A T-MAX Microchip Technology	8,017	RFQ	Datasheet	-	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	70A (Tc)	10V	100mOhm @ 33A, 10V	5V @ 2.5mA	330 nC @ 10 V	±30V	13190 pF @ 25 V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
IXFR20N120P MOSFET N-CH 1200V 13A ISOPLUS247 Littelfuse Inc.	5,525	RFQ	Datasheet	HiPerFET™, Polar	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	13A (Tc)	10V	630mOhm @ 10A, 10V	6.5V @ 1mA	193 nC @ 10 V	±30V	11100 pF @ 25 V	-	290W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ISOPLUS247™
APT5010LVFRG MOSFET N-CH 500V 47A TO264 Microchip Technology	9,571	RFQ	Datasheet	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	47A (Tc)	-	100mOhm @ 500mA, 10V	4V @ 2.5mA	470 nC @ 10 V	-	8900 pF @ 25 V	-	-	-	-	-	Through Hole	TO-264 [L]
IXFR14N100Q2 MOSFET N-CH 1000V 9.5A ISOPLS247 IXYS	5,281	RFQ	Datasheet	HiPerFET™, Q2 Class	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	9.5A (Tc)	10V	1.1Ohm @ 7A, 10V	5V @ 4mA	83 nC @ 10 V	±30V	2700 pF @ 25 V	-	200W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ISOPLUS247™
GA04JT17-247 TRANS SJT 1700V 4A TO247AB GeneSiC Semiconductor	3,694	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	1700 V	4A (Tc) (95°C)	-	480mOhm @ 4A	-	-	-	-	-	106W (Tc)	175°C (TJ)	-	-	Through Hole	TO-247AB
APT6021SFLLG MOSFET N-CH 600V 29A D3PAK Microchip Technology	8,626	RFQ	Datasheet	POWER MOS 7®	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	29A (Tc)	-	210mOhm @ 14.5A, 10V	5V @ 1mA	80 nC @ 10 V	-	3470 pF @ 25 V	-	-	-	-	-	Surface Mount	D3PAK
IPDQ60R015CFD7XTMA1 HIGH POWER_NEW Infineon Technologies	6,050	RFQ	Datasheet	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	600 V	149A (Tc)	10V	15mOhm @ 58.2A, 10V	4.5V @ 2.91mA	251 nC @ 10 V	±20V	9900 pF @ 400 V	-	657W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22-1
IXFN26N90 MOSFET N-CH 900V 26A SOT-227B IXYS	2,371	RFQ	Datasheet	HiPerFET™	SOT-227-4, miniBLOC	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	900 V	26A (Tc)	10V	300mOhm @ 13A, 10V	5V @ 8mA	240 nC @ 10 V	±20V	10800 pF @ 25 V	-	600W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
IXFT80N085 MOSFET N-CH 85V 80A TO268 IXYS	7,706	RFQ	Datasheet	HiPerFET™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	85 V	80A (Tc)	10V	9mOhm @ 40A, 10V	4V @ 4mA	180 nC @ 10 V	±20V	4800 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA
IPT65R033G7XTMA1 MOSFET N-CH 650V 69A 8HSOF Infineon Technologies	5,417	RFQ	Datasheet	CoolMOS™ C7	8-PowerSFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	69A (Tc)	10V	33mOhm @ 28.9A, 10V	4V @ 1.44mA	110 nC @ 10 V	±20V	5000 pF @ 400 V	-	391W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HSOF-8-2
IXFN48N55 MOSFET N-CH 550V 48A SOT-227B IXYS	9,966	RFQ	Datasheet	HiPerFET™	SOT-227-4, miniBLOC	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	550 V	48A (Tc)	10V	110mOhm @ 500mA, 10V	4.5V @ 8mA	330 nC @ 10 V	±20V	8900 pF @ 25 V	-	600W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
APT20M22LVRG MOSFET N-CH 200V 100A TO264 Microchip Technology	7,582	RFQ	Datasheet	POWER MOS V®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	100A (Tc)	10V	22mOhm @ 500mA, 10V	4V @ 2.5mA	435 nC @ 10 V	±30V	10200 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 [L]
IXFN48N50 MOSFET N-CH 500V 48A SOT-227B IXYS	6,013	RFQ	Datasheet	HiPerFET™	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	48A (Tc)	10V	100mOhm @ 500mA, 10V	4V @ 8mA	270 nC @ 10 V	±20V	8400 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
APT1201R6SVFRG MOSFET N-CH 1200V 8A D3PAK Microchip Technology	5,317	RFQ	Datasheet	POWER MOS V®	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	8A (Tc)	-	1.6Ohm @ 4A, 10V	4V @ 1mA	230 nC @ 10 V	-	3660 pF @ 25 V	-	-	-	-	-	Surface Mount	D3PAK
IXFR48N60Q3 MOSFET N-CH 600V 32A ISOPLUS247 Littelfuse Inc.	6,546	RFQ	Datasheet	HiPerFET™, Q3 Class	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	32A (Tc)	10V	154mOhm @ 24A, 10V	6.5V @ 4mA	140 nC @ 10 V	±30V	7020 pF @ 25 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ISOPLUS247™
IXFN27N80 MOSFET N-CH 800V 27A SOT-227B IXYS	6,782	RFQ	Datasheet	HiPerFET™	SOT-227-4, miniBLOC	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	800 V	27A (Tc)	10V, 15V	300mOhm @ 13.5A, 10V	4.5V @ 8mA	400 nC @ 10 V	±20V	9740 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
AS1M040120T N-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED	1	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	20V	55mOhm @ 40A, 20V	4V @ 10mA	142 nC @ 20 V	+25V, -10V	2946 pF @ 1000 V	-	330W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4
IXUN280N10 MOSFET N-CH 100V 280A SOT-227B IXYS	4,273	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	280A (Tc)	10V	5mOhm @ 140A, 10V	4V @ 4mA	440 nC @ 10 V	±20V	18000 pF @ 25 V	-	770W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
IXFN90N30 MOSFET N-CH 300V 90A SOT-227B IXYS	7,018	RFQ	Datasheet	HiPerFET™	SOT-227-4, miniBLOC	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	300 V	90A (Tc)	10V	33mOhm @ 45A, 10V	4V @ 8mA	360 nC @ 10 V	±20V	10000 pF @ 25 V	-	560W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
TW070J120B,S1Q SICFET N-CH 1200V 36A TO3P Toshiba Semiconductor and Storage	4,273	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	20V	90mOhm @ 18A, 20V	5.8V @ 20mA	67 nC @ 20 V	±25V, -10V	1680 pF @ 800 V	-	272W (Tc)	-55°C ~ 175°C	-	-	Through Hole	TO-3P(N)

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.