FETs, MOSFETs
Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.
If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IMW65R020M2HXKSA1SILICON CARBIDE MOSFET |
163 |
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Datasheet | CoolSiC™ Gen 2 | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 83A (Tc) | 15V, 20V | 18mOhm @ 46.9A, 20V | 5.6V @ 9.5mA | 57 nC @ 18 V | +23V, -7V | 2038 pF @ 400 V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-40 |
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IMBG40R011M2HXTMA1SIC-MOS |
1,000 |
|
Datasheet | CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 400 V | 13.4A (Ta), 133A (Tc) | 15V, 18V | 14.4mOhm @ 37.1A, 18V | 5.6V @ 13.3mA | 85 nC @ 18 V | +23V, -7V | 3770 pF @ 200 V | - | 3.8W (Ta), 429W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-11 |
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AIMZA75R027M1HXKSA1IGBT |
216 |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 60A (Tj) | 15V, 20V | 25mOhm @ 24.5A, 20V | 5.6V @ 8.8mA | 49 nC @ 18 V | +23V, -5V | 1668 pF @ 500 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4 |
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IPDQ60R020CFD7XTMA1HIGH POWER_NEW |
750 |
|
Datasheet | CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 112A (Tc) | 10V | 20mOhm @ 42.4A, 10V | 4.5V @ 2.12mA | 186 nC @ 10 V | ±20V | 7395 pF @ 400 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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IMZC120R022M2HXKSA1IMZC120R022M2HXKSA1 |
240 |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 80A (Tc) | 15V, 18V | 22mOhm @ 32A, 18V | 5.1V @ 10.1mA | 71 nC @ 18 V | +23V, -7V | 2330 pF @ 800 V | - | 329W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
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IMDQ75R020M1HXUMA1IMDQ75R020M1HXUMA1 |
750 |
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Datasheet | CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 81A (Tj) | 15V, 20V | 18mOhm @ 32.5A, 20V | 5.6V @ 11.7mA | 67 nC @ 18 V | +20V, -2V | 2217 pF @ 500 V | - | 326W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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AIMBG75R020M1HXTMA1AIMBG75R020M1HXTMA1 |
424 |
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Datasheet | CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 81A (Tj) | 15V, 20V | 18mOhm @ 34.1A, 20V | 5.6V @ 12.2mA | 70 nC @ 18 V | +23V, -5V | 2326 pF @ 500 V | - | 326W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7 |
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AIMDQ75R020M1HXUMA1AIMDQ75R020M1HXUMA1 |
670 |
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Datasheet | CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 81A (Tj) | 15V, 20V | 18mOhm @ 32.5A, 20V | 5.6V @ 11.7mA | 67 nC @ 18 V | +23V, -5V | 2217 pF @ 500 V | - | 326W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
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IMZA75R020M1HXKSA1SILICON CARBIDE MOSFET |
237 |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 75A (Tj) | 15V, 20V | 18mOhm @ 32.5A, 20V | 5.6V @ 11.7mA | 67 nC @ 18 V | +23V, -5V | 2217 pF @ 500 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4 |
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AIMZHN120R040M1TXKSA1SIC_DISCRETE |
240 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 18V, 20V | 50mOhm @ 20A, 20V | 5.1V @ 6.4mA | 43 nC @ 20 V | +23V, -5V | 1264 pF @ 800 V | - | 268W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-14 |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.
