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FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AIMZA75R040M1HXKSA1 Infineon Technologies

AIMZA75R040M1HXKSA1

IGBT

Infineon Technologies

229
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 44A (Tj) 15V, 20V 37mOhm @ 16.6A, 20V 5.6V @ 6mA 34 nC @ 18 V +23V, -5V 1135 pF @ 500 V - 185W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4
IMZA65R033M2HXKSA1 Infineon Technologies

IMZA65R033M2HXKSA1

IMZA65R033M2HXKSA1

Infineon Technologies

390
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 53A (Tc) 15V, 20V 30mOhm @ 27.9A, 20V 5.6V @ 5.7mA 34 nC @ 18 V +23V, -7V 1214 pF @ 400 V - 194W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-8
IMBG40R015M2HXTMA1 Infineon Technologies

IMBG40R015M2HXTMA1

SIC-MOS

Infineon Technologies

939
Datasheet CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 11.7A (Ta), 111A (Tc) 15V, 18V 19.1mOhm @ 27.1A, 18V 5.6V @ 9.7mA 62 nC @ 18 V +23V, -7V 2730 pF @ 200 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-11
GS-065-030-6-LL-MR Infineon Technologies

GS-065-030-6-LL-MR

GAN POWER TRANSISTOR

Infineon Technologies

195
Datasheet - 8-PowerSFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 700 V 40A (Tc) 6V 58mOhm @ 5.5A, 6V 2.6V @ 7.5mA 6.7 nC @ 6 V +7V, -10V 235 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount TOLL
IPWS65R022CFD7AXKSA1 Infineon Technologies

IPWS65R022CFD7AXKSA1

AUTOMOTIVE_COOLMOS PG-TO247-3

Infineon Technologies

238
Datasheet CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 96A (Tc) 10V 22mOhm @ 58.2A, 10V 4.5V @ 2.91mA 234 nC @ 10 V ±30V 11659 pF @ 400 V - 446W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-31
IPDQ60R025CFD7XTMA1 Infineon Technologies

IPDQ60R025CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies

725
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 90A (Tc) 10V 25mOhm @ 32.6A, 10V 4.5V @ 1.63mA 141 nC @ 10 V ±20V 5626 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
AIMZHN120R080M1TXKSA1 Infineon Technologies

AIMZHN120R080M1TXKSA1

SIC_DISCRETE

Infineon Technologies

233
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V, 20V 100mOhm @ 10A, 20V 5.1V @ 3.3mA 24 nC @ 20 V +23V, -5V 671 pF @ 800 V - 169W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-14
IMDQ75R027M1HXUMA1 Infineon Technologies

IMDQ75R027M1HXUMA1

IMDQ75R027M1HXUMA1

Infineon Technologies

708
Datasheet CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 64A (Tj) 15V, 20V 25mOhm @ 24.5A, 20V 5.6V @ 8.8mA 49 nC @ 18 V +20V, -2V 1668 pF @ 500 V - 273W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HDSOP-22-1
IPQC60R017S7XTMA1 Infineon Technologies

IPQC60R017S7XTMA1

MOSFET

Infineon Technologies

750
Datasheet CoolMOS™ S7 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 12V 17mOhm @ 29A, 12V 4.5V @ 1.89mA 196 nC @ 12 V ±20V 7370 pF @ 300 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
IPDQ60R017S7XTMA1 Infineon Technologies

IPDQ60R017S7XTMA1

MOSFET

Infineon Technologies

695
Datasheet CoolMOS™ S7 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 12V 17mOhm @ 29A, 12V 4.5V @ 1.89mA 196 nC @ 12 V ±20V 7370 pF @ 300 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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