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FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IMZA75R040M1HXKSA1 Infineon Technologies

IMZA75R040M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

235
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 44A (Tj) 15V, 20V 37mOhm @ 16.6A, 20V 5.6V @ 6mA 34 nC @ 18 V +23V, -5V 1135 pF @ 500 V - 185W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4
AIMCQ120R060M1TXTMA1 Infineon Technologies

AIMCQ120R060M1TXTMA1

SIC_DISCRETE

Infineon Technologies

850
Datasheet CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 44A (Tc) 18V, 20V 75mOhm @ 13A, 20V 5.1V @ 4.3mA 32 nC @ 20 V +25V, -10V 880 pF @ 800 V - 259W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
AIMZH120R160M1TXKSA1 Infineon Technologies

AIMZH120R160M1TXKSA1

SIC_DISCRETE

Infineon Technologies

207
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 18V, 20V 200mOhm @ 5A, 20V 5.1V @ 1.5mA 14 nC @ 20 V +23V, -5V 350 pF @ 800 V - 109W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-11
IMZC120R040M2HXKSA1 Infineon Technologies

IMZC120R040M2HXKSA1

IMZC120R040M2HXKSA1

Infineon Technologies

240
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 48A (Tc) 15V, 18V 40mOhm @ 18A, 18V 5.1V @ 5.5mA 39 nC @ 18 V +23V, -7V 1310 pF @ 800 V - 218W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
IPT60T022S7XTMA1 Infineon Technologies

IPT60T022S7XTMA1

HIGH POWER_NEW

Infineon Technologies

218
Datasheet CoolMOS™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tj) 12V 22mOhm @ 23A, 12V 4.5V @ 1.43mA 150 nC @ 12 V ±20V 5640 pF @ 300 V - 390W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-2
IPQC60T022S7XTMA1 Infineon Technologies

IPQC60T022S7XTMA1

HIGH POWER_NEW

Infineon Technologies

750
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 90A (Tc) 12V 22mOhm @ 23A, 12V 4.5V @ 1.43mA 150 nC @ 12 V ±20V 5640 pF @ 300 V - 416W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
IMW65R033M2HXKSA1 Infineon Technologies

IMW65R033M2HXKSA1

IMW65R033M2HXKSA1

Infineon Technologies

369
Datasheet CoolSiC™ TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 53A (Tc) 15V, 20V 30mOhm @ 27.9A, 20V 5.6V @ 5.7mA 34 nC @ 18 V +23V, -7V 1214 pF @ 400 V - 194W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-40
IMT40R015M2HXTMA1 Infineon Technologies

IMT40R015M2HXTMA1

SIC-MOS

Infineon Technologies

1,942
Datasheet CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 11.7A (Ta), 111A (Tc) 15V, 18V 19.1mOhm @ 27.1A, 18V 5.6V @ 9.7mA 62 nC @ 18 V +23V, -7V 2730 pF @ 200 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-2
IPDQ60R016CM8XTMA1 Infineon Technologies

IPDQ60R016CM8XTMA1

IPDQ60R016CM8XTMA1

Infineon Technologies

720
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 135A (Tc) 10V 16mOhm @ 62.5A, 10V 4.7V @ 1.48mA 171 nC @ 10 V ±20V 7545 pF @ 400 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
IPDQ60R022S7AXTMA1 Infineon Technologies

IPDQ60R022S7AXTMA1

MOSFET

Infineon Technologies

750
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 12V 22mOhm @ 23A, 12V 4.5V @ 1.44mA 150 nC @ 12 V ±20V 5640 pF @ 300 V - 416W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

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