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FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRF3709ZSPBF Infineon Technologies

IRF3709ZSPBF

MOSFET N-CH 30V 87A D2PAK

Infineon Technologies

7,670
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRL5602SPBF Infineon Technologies

IRL5602SPBF

MOSFET P-CH 20V 24A D2PAK

Infineon Technologies

6,177
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete P-Channel MOSFET (Metal Oxide) 20 V 24A (Tc) 2.5V, 4.5V 42mOhm @ 12A, 4.5V 1V @ 250µA 44 nC @ 4.5 V ±8V 1460 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF6215SPBF Infineon Technologies

IRF6215SPBF

MOSFET P-CH 150V 13A D2PAK

Infineon Technologies

2,175
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF630NLPBF Infineon Technologies

IRF630NLPBF

MOSFET N-CH 200V 9.3A TO262

Infineon Technologies

7,191
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.3A (Tc) 10V 300mOhm @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 575 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRLIB9343PBF Infineon Technologies

IRLIB9343PBF

MOSFET P-CH 55V 14A TO220AB FP

Infineon Technologies

6,925
Datasheet HEXFET® TO-220-3 Full Pack Tube Obsolete P-Channel MOSFET (Metal Oxide) 55 V 14A (Tc) 4.5V, 10V 105mOhm @ 3.4A, 10V 1V @ 250µA 47 nC @ 10 V ±20V 660 pF @ 50 V - 33W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-220AB Full-Pak
IRL3705ZLPBF Infineon Technologies

IRL3705ZLPBF

MOSFET N-CH 55V 75A TO262

Infineon Technologies

3,052
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V ±16V 2880 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRF9530NSPBF Infineon Technologies

IRF9530NSPBF

MOSFET P-CH 100V 14A D2PAK

Infineon Technologies

8,487
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 200mOhm @ 8.4A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF5305SPBF Infineon Technologies

IRF5305SPBF

MOSFET P-CH 55V 31A D2PAK

Infineon Technologies

7,277
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 60mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRL7833SPBF Infineon Technologies

IRL7833SPBF

MOSFET N-CH 30V 150A D2PAK

Infineon Technologies

8,926
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 3.8mOhm @ 38A, 10V 2.3V @ 250µA 47 nC @ 4.5 V ±20V 4170 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF9Z34NLPBF Infineon Technologies

IRF9Z34NLPBF

MOSFET P-CH 55V 19A TO262

Infineon Technologies

4,801
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

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