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FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRF7453PBF Infineon Technologies

IRF7453PBF

MOSFET N-CH 250V 2.2A 8SO

Infineon Technologies

7,185
Datasheet HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Ta) 10V 230mOhm @ 1.3A, 10V 5.5V @ 250µA 38 nC @ 10 V ±30V 930 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7456PBF Infineon Technologies

IRF7456PBF

MOSFET N-CH 20V 16A 8SO

Infineon Technologies

8,940
Datasheet HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 20 V 16A (Ta) 2.8V, 10V 6.5mOhm @ 16A, 10V 2V @ 250µA 62 nC @ 5 V ±12V 3640 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7450PBF Infineon Technologies

IRF7450PBF

MOSFET N-CH 200V 2.5A 8SO

Infineon Technologies

5,147
Datasheet HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 200 V 2.5A (Ta) 10V 170mOhm @ 1.5A, 10V 5.5V @ 250µA 39 nC @ 10 V ±30V 940 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7460PBF Infineon Technologies

IRF7460PBF

MOSFET N-CH 20V 12A 8SO

Infineon Technologies

4,915
Datasheet HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 20 V 12A (Ta) 4.5V, 10V 10mOhm @ 12A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 2050 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7322D1PBF Infineon Technologies

IRF7322D1PBF

MOSFET P-CH 20V 5.3A 8SO

Infineon Technologies

7,136
Datasheet FETKY™ 8-SOIC (0.154", 3.90mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) 2.7V, 4.5V 62mOhm @ 2.9A, 4.5V 700mV @ 250µA (Min) 29 nC @ 4.5 V ±12V 780 pF @ 15 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7342D2PBF Infineon Technologies

IRF7342D2PBF

MOSFET P-CH 55V 3.4A 8SO

Infineon Technologies

2,933
Datasheet FETKY™ 8-SOIC (0.154", 3.90mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 55 V 3.4A (Ta) 4.5V, 10V 105mOhm @ 3.4A, 10V 1V @ 250µA 38 nC @ 10 V ±20V 690 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRFP4232PBF Infineon Technologies

IRFP4232PBF

MOSFET N-CH 250V 60A TO247AC

Infineon Technologies

6,555
Datasheet HEXFET® TO-247-3 Bag Obsolete N-Channel MOSFET (Metal Oxide) 250 V 60A (Tc) 10V 35.7mOhm @ 42A, 10V 5V @ 250µA 240 nC @ 10 V ±20V 7290 pF @ 25 V - 430W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247AC
IRF7495PBF Infineon Technologies

IRF7495PBF

MOSFET N-CH 100V 7.3A 8SO

Infineon Technologies

7,023
Datasheet HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100 V 7.3A (Ta) 10V 22mOhm @ 4.4A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 1530 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRFS4610PBF Infineon Technologies

IRFS4610PBF

MOSFET N-CH 100V 73A D2PAK

Infineon Technologies

5,449
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRFSL4610PBF Infineon Technologies

IRFSL4610PBF

MOSFET N-CH 100V 73A TO262

Infineon Technologies

4,179
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

Need Help Narrowing Down the Right FETs, MOSFETs Part?

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