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FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPB013N06NF2SATMA1 Infineon Technologies

IPB013N06NF2SATMA1

TRENCH 40<-<100V

Infineon Technologies

898
Datasheet StrongIRFET™2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Ta), 198A (Tc) 6V, 10V 1.3mOhm @ 100A, 10V 3.3V @ 246µA 305 nC @ 10 V ±20V 13800 pF @ 30 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
IPW60R190E6FKSA1 Infineon Technologies

IPW60R190E6FKSA1

MOSFET N-CH 600V 20.2A TO247-3

Infineon Technologies

139
Datasheet CoolMOS™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
IPL60R105P7AUMA1 Infineon Technologies

IPL60R105P7AUMA1

MOSFET N-CH 600V 33A 4VSON

Infineon Technologies

10,206
Datasheet CoolMOS™ P7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 105mOhm @ 10.5A, 10V 4V @ 530µA 45 nC @ 10 V ±20V 1952 pF @ 400 V - 137W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPDD60R125G7XTMA1 Infineon Technologies

IPDD60R125G7XTMA1

MOSFET N-CH 600V 20A HDSOP-10

Infineon Technologies

1,087
Datasheet CoolMOS™ G7 10-PowerSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 125mOhm @ 6.4A, 10V 4V @ 320µA 27 nC @ 10 V ±20V 1080 pF @ 400 V - 120W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-10-1
ISC010N06NM5ATMA1 Infineon Technologies

ISC010N06NM5ATMA1

OPTIMOS5 60 V POWER MOSFET IN SU

Infineon Technologies

3,429
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 39A (Ta), 330A (Tc) 6V, 10V 1.05mOhm @ 50A, 10V 3.3V @ 147µA 143 nC @ 10 V ±20V 11000 pF @ 30 V - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-3
IPT60R105CFD7XTMA1 Infineon Technologies

IPT60R105CFD7XTMA1

MOSFET N-CH 600V 24A 8HSOF

Infineon Technologies

340
Datasheet CoolMOS™ CFD7 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 105mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 140W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-2
SPW16N50C3FKSA1 Infineon Technologies

SPW16N50C3FKSA1

MOSFET N-CH 560V 16A TO247-3

Infineon Technologies

148
Datasheet CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 560 V 16A (Tc) 10V 280mOhm @ 10A, 10V 3.9V @ 675µA 66 nC @ 10 V ±20V 1600 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
SPP15N60C3XKSA1 Infineon Technologies

SPP15N60C3XKSA1

MOSFET N-CH 650V 15A TO220-3

Infineon Technologies

413
Datasheet CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1660 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
IPP50R140CPXKSA1 Infineon Technologies

IPP50R140CPXKSA1

MOSFET N-CH 550V 23A TO220-3

Infineon Technologies

387
Datasheet CoolMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 550 V 23A (Tc) 10V 140mOhm @ 14A, 10V 3.5V @ 930µA 64 nC @ 10 V ±20V 2540 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
BSC019N08NS5ATMA1 Infineon Technologies

BSC019N08NS5ATMA1

MOSFET N-CH 80V 28A/237A TSON-8

Infineon Technologies

4,926
Datasheet OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 28A (Ta), 237A (Tc) 6V, 10V 1.9mOhm @ 50A, 10V 3.8V @ 146µA 117 nC @ 10 V ±20V 8600 pF @ 40 V - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-3
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

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