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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPT019N08N5ATMA1 Infineon Technologies

IPT019N08N5ATMA1

MOSFET N-CH 80V 32A/247A 8HSOF

Infineon Technologies

3,850
Datasheet OptiMOS™ 5 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 32A (Ta), 247A (Tc) 6V, 10V 1.9mOhm @ 150A, 10V 3.8V @ 159µA 127 nC @ 10 V ±20V 9200 pF @ 40 V - 231W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-1
IPP65R150CFDAAKSA1 Infineon Technologies

IPP65R150CFDAAKSA1

MOSFET N-CH 650V 22.4A TO220-3

Infineon Technologies

264
Datasheet CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3
IPB320P10LMATMA1 Infineon Technologies

IPB320P10LMATMA1

TRENCH >=100V PG-TO263-3

Infineon Technologies

916
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 6.5A (Ta), 63A (Tc) 4.5V, 10V 32mOhm @ 54A, 10V 2V @ 5.55mA 219 nC @ 10 V ±20V 11000 pF @ 50 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
IPP330P10NMAKSA1 Infineon Technologies

IPP330P10NMAKSA1

TRENCH >=100V PG-TO220-3

Infineon Technologies

385
Datasheet OptiMOS™ TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 100 V 6.9A (Ta), 62A (Tc) 10V 33mOhm @ 53A, 10V 4V @ 5.55mA 236 nC @ 10 V ±20V 11000 pF @ 50 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPB011N04LGATMA1 Infineon Technologies

IPB011N04LGATMA1

MOSFET N-CH 40V 180A TO263-7

Infineon Technologies

2,111
Datasheet OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 1.1mOhm @ 100A, 10V 2V @ 200µA 346 nC @ 10 V ±20V 29000 pF @ 20 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-3
IPB60R125C6ATMA1 Infineon Technologies

IPB60R125C6ATMA1

MOSFET N-CH 600V 30A D2PAK

Infineon Technologies

1,840
Datasheet CoolMOS™ C6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 125mOhm @ 14.5A, 10V 3.5V @ 960µA 96 nC @ 10 V ±20V 2127 pF @ 100 V - 219W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IPP60R125C6XKSA1 Infineon Technologies

IPP60R125C6XKSA1

MOSFET N-CH 600V 30A TO220-3

Infineon Technologies

440
Datasheet CoolMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 125mOhm @ 14.5A, 10V 3.5V @ 960µA 96 nC @ 10 V ±20V 2127 pF @ 100 V - 219W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPA60R125C6XKSA1 Infineon Technologies

IPA60R125C6XKSA1

MOSFET N-CH 600V 30A TO220-FP

Infineon Technologies

132
Datasheet CoolMOS™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 125mOhm @ 14.5A, 10V 3.5V @ 960µA 96 nC @ 10 V ±20V 2127 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IRFP4110PBFXKMA1 Infineon Technologies

IRFP4110PBFXKMA1

TRENCH >=100V PG-TO247-3

Infineon Technologies

929
Datasheet HEXFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9620 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
IPT60R102G7XTMA1 Infineon Technologies

IPT60R102G7XTMA1

MOSFET N-CH 600V 23A 8HSOF

Infineon Technologies

2,294
Datasheet CoolMOS™ G7 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 102mOhm @ 7.8A, 10V 4V @ 390µA 34 nC @ 10 V ±20V 1320 pF @ 400 V - 141W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-2
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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